Download or read book Reactive Ion Etching of Indium Phosphide based Heterostructures and Field effect Transistors Using Hydrogen Bromide Plasma written by Sambhulal Agarwala and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new highly selective reactive ion etching process based on HBr plasma for the removal of InGaAs over InAlAs has been developed and the results are presented. The etch selectivity at a self-bias voltage of $-$100 V is over 160, which is the highest that has been reported for this material system so far. High etch selectivity is maintained over a wide range of chamber pressure and plasma self-bias voltages. The mechanism of this etch selectivity is determined to be due to the formation of involatile Al$sb2$O$sb3$. Selective HBr etching has been applied as the gate-recess process in the fabrication of InAlAs/InGaAs heterostructure FETs. Since less RIE-induced damage was observed in delta-doped structures, delta-doping was employed in all InP-based HFETs. The dc and rf device parameters of a typical 0.75-$mu$m gate-length transistor compare favorably with those of a corresponding device gate-recessed with a selective wet-etching technique. An extrinsic current-gain cutoff frequency of 150 GHz is obtained for a typical 0.2 $mu$m gate-length HFET device that was fabricated using selective HBr gate recess process. RIE-induced damage is characterized extensively using a variety of techniques such as AES, XPS, and SIMS analyses, Raman scattering, Hall measurements and Schottky characteristics. No significant degradation in surface properties is observed. The lattice damage in layer structures with 2DEG depth of greater than 20 nm was minimal. It is also observed that with increasing self-bias voltage the rate of removal of InGaAs increases faster than the rate of introduction of damage. An exponential distribution of damage with 1/e penetration depth of about 7.8 nm has been obtained. The exponential distribution of defects suggests that either ion channeling or diffusion is the possible mechanism of defect production in regions deeper than the projected range.
Download or read book Reactive Ion Etching of InP based Heterostructures and Field effect Transistors Using HBr Plasma written by Sambhulal Agarwala and published by . This book was released on 1994 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Etching and Reactive Ion Etching written by J. W. Coburn and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Inductively coupled Plasma Reactive Ion Etching ICP RIE with HBR and Other Etch Chemistries of SI SIGE based Resonant Interband Tunnel Diodes Grown by Low Temperature Molecular Beam Epitaxy LT MBE written by Si-Young Park and published by . This book was released on 2006 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The International Technology Roadmap for Semiconductors (ITRS) forecasts that current semiconductor technology based on the mainstream silicon CMOS platform is approaching its scaling of limit. One emerging technology which may augment CMOS and extend its operational lifetime is tunneling devices together with transistors. Tunnel diode based circuits have superior performance regarding high speed operation concurrently with low power consumption. Si-based resonant interband tunnel diodes (RITD) developed by this research group that are grown epitaxially using low temperature molecular beam epitaxy (LT-MBE), now enable monolithic integration with Si CMOS and SiGe technology. This thesis focuses on the study of the plasma damage from inductively- coupled plasma reactive ion etching (ICP-RIE) processes using several different process gases, various ICP powers and substrate bias powers compared to wet etching techniques on Si-based diodes grown using low temperature molecular beam epitaxial (LT-MBE). Of particular interest and promise is an HBr etch chemistry that provides hydrogen passivation while etching. The minimization from incident ion damage and residual surface contamination during dry plasma etching is one of the key issues in modern VLSI manufacturing, especially as transistors/devices are scaled to below 50 nm lengths. Many researchers, therefore, are still developing many advanced techniques to reduce and minimize plasma damage created by dry plasma etching process.
Download or read book Plasma Etching Processes for Interconnect Realization in VLSI written by Nicolas Posseme and published by Elsevier. This book was released on 2015-04-14 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2626 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Processing written by R. G. Frieser and published by . This book was released on 1981 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Indium Phosphide written by and published by Institution of Electrical Engineers. This book was released on 1991 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: Invaluble to those studying or exploiting Indium Phosphide, which can provide tunable light sources at wavelengths which undergo minimum attenuation in fiber optic cables.
Download or read book Reactive Ion Etching of Indium based Compounds Using Methane hydrogen argon written by Jeffrey Emerson Schramm and published by . This book was released on 1995 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Etching Processes for CMOS Devices Realization written by Nicolas Posseme and published by Elsevier. This book was released on 2017-01-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm
Download or read book Indium Phosphide and Related Materials written by Avishay Katz and published by Artech House Publishers. This book was released on 1992 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents an integrated survey of the most recent research, engineering development and commercial application of indium phosphide and related materials. The book is tutorial in nature, rich in application-engineering detail and emphasizes the designing and implementing of practical devices.
Download or read book Properties Processing and Applications of Indium Phosphide written by T. P. Pearsall and published by Inst of Engineering & Technology. This book was released on 2000-01 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation This collection of 49 papers identifies the significant advances and distills the current knowledge from the literature which has been published on indium phosphate (InP) in the last ten years. The major areas of discussion are the importance on InP properties in devices; mechanical, thermal, piezoelectric and electro-optic properties; electronic transport properties; band structure; optical properties; defects, deep levels and their detection; and processing technologies. Topics include InP-based alloys as optical amplifiers and lasers, electron and hole mobilities in InP, conduction band and valance band offsets at various InP/semiconductor interfaces, defect energy levels in irradiated or implanted InP, and etching of InP. Some of the material is reprinted from published in 1991. Distributed by INSPEC. Annotation c. Book News, Inc., Portland, OR (booknews.com)
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dry Etching for Microelectronics written by Ronald A. Powell and published by North-Holland. This book was released on 1984 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.
Download or read book Enhanced Plasma Etching for Group III V Semiconductors written by Alexandros T. Demos and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Indium Phosphide for High Frequency Power Transistors written by V. L. Wrick and published by . This book was released on 1979 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technology development is presented for the development of an InP power Field Effect Transistor. Both ion implantation and vapor phase epitaxy results are presented as a means for providing an active channel. Processing technology (etching, ohmic contacts) is reviewed as well as a description of various approaches for gating n-type InP. Conclusions and plans for the last phase of the program are discussed. As a result of the first part of the program, work is to be concentrated on developing Junction Field Effect Transistor technology.
Download or read book Halogen Based Plasma Etching of Novel Field Effect Transistor Gate Materials written by Kasi Michelle Kiehlbaugh and published by . This book was released on 2009 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vacuum Beam Studies of Ruthenium Etching Ru is known to have two volatile oxidation products, RuO3 and RuO4, although the etch rate is negligible when Ru is exposed to an O2 plasma discharge. The introduction of a small amount of additive gas, such as Cl2, has been shown to increase the Ru etch rate sixfold. The reason for this dramatic shift in etching is poorly understood, primarily because it is difficult if not impossible to study plasma-surface interactions in a plasma environment. The unique capabilities of the beam system have made it possible to explore the mechanism of Ru etching. It has been shown that under 500 eV Ar+ ion bombardment, the addition of O radicals lowered the etch rate by a factor of 2.5. This process was relatively insensitive to temperature over the range studied (room temperature to ̃175°C). It was also shown that O radicals alone spontaneously etched Ru at a very slow rate over the entire temperature range. Statistical Analysis of Polysilicon Etching and Gate Profile Evolution in Dual-Doped Polysilicon Gates Polysilicon gate etching for the 90nm lithography node and below requires extremely precise control of the gate CD and profile. Generally speaking, the current requirement for Gate CD control is that the 3 sigma should less than ̃5 nm for all gates, including across the chip, across the wafer, wafer-to-wafer, lot-to-lot, and tool-to-tool variations. Similarly, for gate sidewall angle control, the 3 sigma angle variation should be less than ̃1 degree, inclusive of all sources of variation. This is particularly challenging for technologies which employ dual-doped gates, since the chemistry and physics of the etching process induces a different profile evolution between gates with different doping. The goal of this project was to identify a parameter space where the differences in gate profile evolution across different polysilicon dopant types were minimized. Blanket etch rates and patterned wafers were used to determine the effect of different gate etch process variables on the gate profile. The materials studied were undoped polysilicon and polysilicon that had been doped with P, As, Sb, and B. Prediction models were created for the blanket etch rate studies that were used to optimize the processing conditions and to propose some simple mechanisms that identify which species are adsorbed on the surface.
