Download or read book Radiation Damage in Silicon Detectors written by H.W. Kraner and published by . This book was released on 1973 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Radiation Damage in Silicon written by M. N. Robinson and published by . This book was released on 1965 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation damage effects in silicon detectors written by and published by . This book was released on 1989 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Evolution of Silicon Sensor Technology in Particle Physics written by Frank Hartmann and published by Springer Science & Business Media. This book was released on 2008-12-01 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the post era of the Z and W discovery, after the observation of Jets at UA1 and UA2 at CERN, John Ellis visioned at a HEP conference at Lake Tahoe, California in 1983 “To proceed with high energy particle physics, one has to tag the avour of the quarks!” This statement re ects the need for a highly precise tracking device, being able to resolve secondary and tertiary vertices within high-particle densities. Since the d- tance between the primary interaction point and the secondary vertex is proportional tothelifetimeoftheparticipatingparticle,itisanexcellentquantitytoidentifypar- cle avour in a very fast and precise way. In colliding beam experiments this method was applied especially to tag the presence of b quarks within particle jets. It was rst introduced in the DELPHI experiment at LEP but soon followed by all collider - periments to date. The long expected t quark discovery was possible mainly with the help of the CDF silicon vertex tracker, providing the b quark information. In the beginning of the 21st century the new LHC experiments are beginning to take 2 shape. CMS with its 206m of silicon area is perfectly suited to cope with the high luminosity environment. Even larger detectors are envisioned for the far future, like the SiLC project for the International Linear Collider. Silicon sensors matured from small 1in. single-sided devices to large 6in. double-sided, double metal detectors and to 6in. single-sided radiation hard sensors.
Download or read book Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation written by and published by . This book was released on 2002 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Junction Capacitance Techniques to Characterize Radiation Damage in Silicon written by J. W. Diebold and published by . This book was released on 1973 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: Capacitance-voltage and transient capacitance measurements were made on Schottky barrier-on-phosphorus-doped silicon diodes. Energy levels, emission coefficients, and associated introduction rates were determined for defects produced by 1.0-MeV electrons, Co(60)-gamma rays, and 5-MeV neutrons. Total defect introduction rates agree well with carrier removal data of companion Hall effect samples. In the electron- and gamma-irradiated samples, specific introduction data reveal radiation-induced traps at E(c) - 0.24 eV, E(c) - 0.44 eV, and below midgap. The introduction rate of the traps located below midgap exhibits a strong dependence on donor concentration. In neutron-irradiated, float-zoned silicon a band of shallow trap levels is evident along with levels at E(c) - 0.37 eV, E(c) - 0.40 eV, and below midgap. In neutron-irradiated, crucible-grown silicon, trap levels are observed at E(c) - 0.18 eV, E(c) - 0.23 eV, E(c) - 0.24 eV, E(c) - 0.31 eV, and below midgap. (Author).
Download or read book Radiation Damage Studies of Silicon Detectors written by Sakuntala Sotthibandhu and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Damage in Silicon Detectors written by E. Borchi and published by . This book was released on 1994 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book RADIATION DAMAGE IN SILICON DETECTORS IN GERMAN written by L. Bischoff and published by . This book was released on 1986 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reliability and Radiation Effects in Compound Semiconductors written by Allan H. Johnston and published by World Scientific. This book was released on 2010 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Download or read book Radiation Damage Effects in Silicon Detectors written by G. Lindström and published by . This book was released on 1989 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Download or read book Semiconductor Radiation Detectors written by Gerhard Lutz and published by Springer. This book was released on 2007-06-15 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.
Download or read book Radiation Damage in Silicon Detectors written by and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A review is presented of the effects of radiation damage on silicon detectors which are being considered for high energy physics applications. The main degradation in performance is an increase in leakage current, which can be well characterized by an empirical damage constant for many radiations. A summary of data on damage constants is given. A brief discussion of annealing effects in terms of band gap level changes is included.
Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Download or read book Radiation Damage in Silicon written by Frank Hönniger and published by . This book was released on 2008 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt:
