Download or read book Pseudomorphic and Strain relaxed InGaAs Channel Modulation doped Field effect Transistors on GaAs and InP Substrates written by David J. Cheskis and published by . This book was released on 1995 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Molecular beam Epitaxial Growth and Characterization of Pseudomorphic Double Modulation doped Field Effect Transistor Structures on Gallium Arsenide written by Pierre Mandeville and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1993 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book InGaAs Field effect Transistors written by Klaus Heime and published by Wiley-Blackwell. This book was released on 1989 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modulation Doped Field Effect Transistors for Microwave Device Applications written by Norman C. Tien and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Realization of Ultra High Speed Modulation doped Field Effect Transistors written by Loi Dinh Nguyen and published by . This book was released on 1989 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Modulation doped Field effect Transistors with Gate Lengths Down to 600 Angstroms written by Paul Raymond De la Houssaye and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rapid thermal annealing of AlGaAs InGaAs GaAs pseudomorphic modulation doped field effect transistors written by Suk-yin Flora Ip and published by . This book was released on 1990 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1074 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Enhanced Schottky Barrier InGaAs AlxGa 1 x As Strained Channel Modulation Doped Field Effect Transistors written by James A. Lott and published by . This book was released on 1987 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: Enhanced Schottky-barrier In(0.15)Ga(0.85)As/A1xGa(1-x)As pseudomorphic modulation-doped field-effect transistors (MODFETs) were fabricated with 1.2 micron gate-lengths on MBE-grown substrates. The effective gate Schottky-barrier height was enhanced by adding a thin p(+)-GaAs layer beneath the gate. A portion of the n-A1(0.15)Ga(0.85)As barrier layer beneath the p(+)-GaAs surface layer was linearly graded from a mole fraction of 0.15 to 0.30 to further increase the effective Schottky-barrier height. MODFETs of identical dimension and doping density were fabricated without the p(+)-GaAs and/or graded N-A1(x)Ga(1-x)As layers for comparison. The goal was to improve the MODFETs high-frequency performance by reducing the gate leakage current. The effective Schottky-barrier height was shown to increase from 0.9 to 1.6 eV for the p(+)-graded samples. The extrinsic transconductance was as high as 190 mS/mm for the p(+)-grades samples and 311 mS/mm for the graded control samples. The p(+)-graded samples exhibited and f(T) and f(max)of 26 and 54 GHz, respectively, compared to 19 and 28 GHz, respectively, for the graded control samples. The noise figure for the p(+)-graded samples was 1.7 dB at 12 GHz, compared to 1.9 dB for the graded control samples. Overall, the MODFETs with enhanced barriers.

Download or read book Growth Fabrication and Testing of Pseudomorphic P channel GaAs InGaAs AlGaAs MODFETS written by Donald W. Schulte and published by . This book was released on 1992 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization of these samples using van der Pauw Hall and photoluminescence measurements showed clear trends in carrier mobility and quantum well quality with respect to the structure of the InGaAs region. From this an optimal indium mole fraction and quantum well width were obtained. Subsequent to material characterization, MODFET devices were fabricated and characterized. The measured DC device performance was reasonable and suggests that high quality p-type MODFETS should be obtainable with a properly optimized device structure and fabrication process.

Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book 1997 IEEE International Symposium on Compound Semiconductors written by Mike Melloch and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1998 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text focuses on the conductive characteristics of crystalline compounds, including the topics: GaN and compliant substrates; optical characterization; heterostructure transistors; quantum dots; visible emitters; GaN and related compounds; and passivation and growth issues in GaAs."

Download or read book InGaAs InAlAs Lattice mismatched Heterojunction Insulated gate Field Effect Transistors Grown on GaAs written by Peter Chu and published by . This book was released on 1990 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Compound Semiconductors 1997 Proceedings of the IEEE Twenty Fourth INT Symposium on Compound Semiconductors held in San Diego California 8 11 September 1997 written by Mike Melloch and published by CRC Press. This book was released on 1998-01-01 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 24th Symposium attracted over 250 submissions, predominantly on growth and characterization. Compound semiconductors have become pervasive in applications that are unique and could not be addressed in any other viable manner, such as laser diodes in compact disk players, high brightness LEDs in automotive tail lights, low noise and low power amplifiers in cellular phones, infra-red diodes in remote controls, low noise amplifier front ends in televisions, and the recent high-brightness blue LEDs. Many of the contributions that engendered these novel products were first reported at the International Symposium on Compound Semiconductors. The procceedings of this conferences are an essential reference for all researchers in semiconductor physics, optoelectronics, electronic and electrical engineering, researching the properties and applications of compound materials.