Download or read book Properties and Structure of Dislocations in Semiconductors written by and published by . This book was released on 1983 with total page 499 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.

Download or read book Colloque International Du CNRS Sur Les Properties and Structure of Dislocations in Semiconductors written by Centre national de la recherche scientifique (France) and published by . This book was released on 1983 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 3 written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 5 written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 4 written by and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties and Structures of Dislocations in Semiconductors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dislocations in Solids written by Hiroshi Suzuki and published by CRC Press. This book was released on 2023-03-08 with total page 691 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises the Proceedings of the Yamada Conference IX on Dislocations in Solids, held in August 1984 in Tokyo. The purpose of the conference was two-fold: firstly to evaluate the increasing data on basic properties of dislocations and their interaction with other types of defects in solids and, secondly, to increase understanding of the material properties brought about by dislocation-related phenomena. Metals and alloys, semi-conductors and ions crystals were discussed. One of the important points of contention was the electronic state at the core of dislocation. Another was the dislocation model of amorphous structure.

Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989-01-01 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.

Download or read book Crystal Dislocations Their Impact on Physical Properties of Crystals written by Peter Lagerlof and published by MDPI. This book was released on 2019-01-09 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Crystal Dislocations: Their Impact on Physical Properties of Crystals" that was published in Crystals

Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Download or read book Proceedings of the International Symposium on the Structure and Properties of Dislocations in Semiconductors 6th Held in Oxford England 5 8 April 1989 Structure and Properties of Dislocations in Semiconductors 1989 written by and published by . This book was released on 1989 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).

Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Download or read book Core Structure and Physical Properties written by P. Veyssière and published by Centre National de la Recherche Scientifique, CNRS. This book was released on 1984 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2014-08-07 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Download or read book Colloque International Du C N R S Sur Les Propri t s Et Structure Des Dislocations Dans Les Semiconducteurs written by and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dislocations in Solids written by and published by Elsevier. This book was released on 2009-08-28 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: New materials addressed for the first time include the chapters on minerals by Barber et al and the chapter on dislocations in colloidal crystals by Schall and Spaepen. Moriarty et al extend the first principles calculations of kink configurations in bcc metals to high pressures, including the use of flexible boundary conditions to model dilatational effects. Rabier et al clarify the issue of glide-shuffle slip systems in diamond cubic and related III-V compounds. Metadislocations, discussed by Feuerbacher and Heggen, represent a new type of defect in multicomponent metal compounds and alloys. Kink mechanisms for dislocation motion at high pressure in bcc metals Dislocation core structures identified in silicon at high stress Metadislocations, a new type of defect, identified and described Extension of dislocation concepts to complex minerals First observations of dislocations in colloidal crystals