Download or read book Index of Conference Proceedings written by British Library. Document Supply Centre and published by . This book was released on 1998 with total page 890 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book ISPSD 98 written by and published by . This book was released on 1998 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Bibliography of Asian Studies written by and published by . This book was released on 1996 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book written by 国立国会図書館 (Japan) and published by . This book was released on 1900 with total page 1762 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 2332 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book New Serial Titles written by and published by . This book was released on 1993 with total page 1644 pages. Available in PDF, EPUB and Kindle. Book excerpt: A union list of serials commencing publication after Dec. 31, 1949.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Electronic Devices and Circuits written by Cheruku Dharma Raj and published by Pearson Education India. This book was released on 2008 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Power Devices for Efficient Energy Conversion written by Gourab Majumdar and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of power electronics, centering on inverters and converters as its key system topology, has accelerated recently due to the demand for efficient power conversion. This growth has also been backed up by several evolutionary changes and breakthroughs achieved in the areas of power semiconductor device physics, process technology, and design. However, as power semiconductor technology remains a highly specialized subject, the literature on further research, development, and design in related fields is not adequate. With this in view, two specialists of power semiconductors, well known for their research and contributions to the field, compiled this book as a review volume focusing on power chip and module technologies. The prime purpose is to help researchers, academia, and engineers, engaged in areas related to power devices and power electronics, better understand the evolutionary growth of major power device components, their operating principles, design aspects, application features, and trends. The book is filled with unique topics related to power semiconductors, including tips on state-of-the-art and futuristic-oriented applications. Numerous diagrams, illustrations, and graphics are included to adequately support the content and to make the book extremely attractive as a practical and user-friendly reference book for researchers, technologists, and engineers, as well as a textbook for advanced graduate-level and postgraduate students.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book Corrosion Failures written by K. Elayaperumal and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides corrosion basics in a lucid manner to students and working professionals and over 80 corrosion-failure analysis case studies Correlates Failure Analysis with Corrosion Science Exclusively provides corrosion-related failure analysis case histories in one place in a convenient format One-stop shop for both science and real time occurrence of the phenomenon of corrosion Full coverage of all MOC, Materials of Construction, used for process equipments Simple but Lucid presentation of Failure Analysis procedure

Download or read book Investigation of Reliability Aspects of Power Semiconductors in Photovoltaic Central Inverters for Sunbelt Regions written by Christian Felgemacher and published by kassel university press GmbH. This book was released on 2018-03-23 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: High reliability and system lifetimes in the range of 30 years are essential for renewable energy systems such as photovoltaic power plants to minimise costs for the generated electric energy. At the same time such systems are used in regions with high solar irradiance and also harsh environmental conditions. Therefore, designs for photovoltaic inverters need to meet not only the key design criteria of high conversion efficiency but also need to be very robust and at the same time meet challenging cost targets. In this dissertation aspects concerning the lifetime and reliability of power semiconductors in photovoltaic central inverters are investigated. On key topic of the dissertation is the measurement of the voltage dependent failure rate due to cosmic radiation induced single-event-burnout of SiC and Si power semiconductors. The second topic is the development of a system level simulation to quantify the stress on the power semiconductors in a PV central inverters in various regions of the world. Further topics are the investigation of improved control concepts for the cooling system of PV central inverters and the monitoring of IGBT temperatures during converter operation.

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Download or read book Power Semiconductor Devices and ICs ISPSD 2000 written by IEEE Electron Devices Society and published by IEEE Standards Office. This book was released on 2000 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book POWER HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.