Download or read book Plasma Etching Processes for Interconnect Realization in VLSI written by Nicolas Posseme and published by Elsevier. This book was released on 2015-04-14 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). - Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits - Focused on plasma-dielectric surface interaction - Helps you further reduce the dielectric constant for the future technological nodes

Download or read book Plasma Etching Processes for CMOS Devices Realization written by Nicolas Posseme and published by Elsevier. This book was released on 2017-01-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Download or read book Atomic Molecular Ionization by Electron Scattering written by K. N. Joshipura and published by Cambridge University Press. This book was released on 2019-01-24 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive and up-to-date text in the field of electron scattering and ionization, covering fundamentals, experimental background, quantum scattering theories and applications. Electron impact ionization of atoms and molecules in ground/metastable states is discussed comprehensively. The text covers electron scattering phenomena for diatomic and common molecules, polyatomic molecules and radicals including hydro-carbons, fluoro-carbons and other larger molecules together with relevant radical species in detail. Applications of electron impact ionization and excitation in gaseous or plasma and condensed matter is discussed in a separate chapter. Recent advances in the field of electron molecule scattering and ionization for polyatomic molecules is covered extensively.

Download or read book Advances in Atomic Molecular and Optical Physics written by and published by Academic Press. This book was released on 2017-06-07 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Atomic, Molecular, and Optical Physics, Volume 66 provides a comprehensive compilation of recent developments in a field that is in a state of rapid growth. New to this volume are chapters devoted to 2D Coherent Spectroscopy of Electronic Transitions, Nonlinear and Quantum Optical Properties and Applications of Intense Twin-Beams, Non-classical Light Generation from III-V and Group-IV Solid-State Cavity Quantum Systems, Trapping Atoms with Radio Frequency Adiabatic Potentials, Quantum Control of Optomechanical Systems, and Efficient Description of Bose–Einstein Condensates in Time-Dependent Rotating Traps. With timely articles written by distinguished experts that contain relevant review materials and detailed descriptions of important developments in the field, this series is a must have for those interested in the variety of topics covered. Presents the work of international experts in the field Contains comprehensive articles that compile recent developments in a field that is experiencing rapid growth, with new experimental and theoretical techniques emerging Ideal for users interested in optics, excitons, plasmas, and thermodynamics Topics covered include atmospheric science, astrophysics, surface physics, and laser physics, amongst others

Download or read book Low Energy Electrons written by Oddur Ingólfsson and published by CRC Press. This book was released on 2019-04-23 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-energy electrons are ubiquitous in nature and play an important role in natural phenomena as well as many potential and current industrial processes. Authored by 16 active researchers, this book describes the fundamental characteristics of low-energy electron–molecule interactions and their role in different fields of science and technology, including plasma processing, nanotechnology, and health care, as well as astro- and atmospheric physics and chemistry. The book is packed with illustrative examples, from both fundamental and application sides, features about 130 figures, and lists over 800 references. It may serve as an advanced graduate-level study course material where selected chapters can be used either individually or in combination as a basis to highlight and study specific aspects of low-energy electron–molecule interactions. It is also directed at researchers in the fields of plasma physics, nanotechnology, and radiation damage to biologically relevant material (such as in cancer therapy), especially those with an interest in high-energy-radiation-induced processes, from both an experimental and a theoretical point of view.

Download or read book Plasma Etching Processes for Sub quarter Micron Devices written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced Plasma etching Processes for Dielectric Materials in VLSI Technology written by Juan-Juan Wang and published by . This book was released on 2002 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Processing for VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Download or read book Dry Etching for VLSI written by A.J. van Roosmalen and published by Springer Science & Business Media. This book was released on 1991-03-31 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.

Download or read book Plasma Etching in Semiconductor Fabrication written by Russ A. Morgan and published by North-Holland. This book was released on 1985-01-01 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hardbound. This book is based on a post-graduate study carried out by the author on plasma etching mechanisms of semiconductor materials such as silicon, silicon dioxide, photoresist and aluminium films used in integrated circuit fabrication. In this book he gives an extensive review of the chemistry of dry etching, sustaining mechanisms and reactor architecture. He also describes a study made on the measurement of the electrical characteristics and ionization conditions existing in a planar reactor. In addition, practical problems such as photoresist mask erosion have been investigated and the reader will find the photoresist chemistry very useful. The book contains a great deal of practical information on plasma etching processes. The electronics industry is continually seeking ways to improve the miniaturization of devices, and this account of the author's findings should be a useful contribution to the work of miniaturization.

Download or read book Plasma Processes for Semiconductor Fabrication written by W. N. G. Hitchon and published by Cambridge University Press. This book was released on 1999-01-28 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modeled. The author begins with an overview of plasma reactors and discusses the various models for understanding plasma processes. He then covers plasma chemistry, addressing the effects of different chemicals on the features being etched. Having presented the relevant background material, he then describes in detail the modeling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many homework exercises and serves as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practicing engineers in the semiconductor industry.

Download or read book Applications of Plasma Processes to VLSI Technology written by Takuo Sugano and published by Wiley-Interscience. This book was released on 1985-09-24 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents state-of-the-art research in microelectronic processing for very large scale integration. Emphasizing applications and techniques, this book provides considerable insight into Japan's technological effort in this important area of science. Focuses on research involving plasma deposition and dry etching. Considerable attention is devoted to MOS gate fabrication, the studies of the influence of process parameters on electrical properties, dry processing technologies, and the theory of plasma chemical reactions.

Download or read book Semiconductor International written by and published by . This book was released on 1987 with total page 968 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Diagnostic of Plasma Etching Processes written by Philippe Schoenborn and published by . This book was released on 1987 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hydrogen based Plasma Etch of Copper at Low Temperature written by Fangyu Wu and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Although copper (Cu) is the preferred interconnect material due to its lower resistivity than aluminum (Al), Cu subtractive etching processes have not been developed at temperatures less than 180 °C, primarily due to the inability to form volatile etch products at low temperature. The conventional damascene technology avoids the need for subtractive etching of Cu by electroplating Cu into previously etched dielectric trenches/vias, followed by a chemical/mechanical planarization (CMP) process. However, a critical "size effect" limitation has arisen for damascene technology as a result of the continuing efforts to adhere to "Moore's Law". The size effect relates to the fact that the resistivity of damascene-generated lines increases dramatically as the line width approaches the sub-100 nm regime, where feature size is similar to the mean free path of electrons in Cu (40 nm). As a result, an alternative Cu patterning process to that of damascene may offer advantages for device speed and thus operation. This thesis describes investigations into the development of novel, fully-plasma based etch processes for Cu at low temperatures (10 °C). Initially, the investigation of a two-step etch process has been studied. This etch approach was based on a previous thermodynamic analysis of the Cu-Cl-H system by investigators at the University of Florida. In the first step, Cu films are exposed to a Cl2 plasma to preferentially form CuCl2, which is believed to be volatilized as Cu3Cl3 by subsequent exposure to a hydrogen (H2) plasma (second step). Patterning of Cu films masked with silicon dioxide (SiO2) layers in an inductively coupled plasma (ICP) reactor indicates that the H2 plasma step in the two-step process is the limiting step in the etch process. This discovery led to the investigation of a single step Cu etch process using a pure H2 plasma. Etching of blanket Cu films and Cu film patterning at 10°C, display an etch rate ~ 13 nm/min; anisotropic etched features are also observed. Comparison of H2 plasma etching to sputtering of Cu films in argon (Ar) plasmas, indicates that both a chemical component and a physical component are involved in the etching mechanism. Additional studies using helium plasmas and variation of power applied to the plasma and etching surface demonstrate that the etch rate is controlled by reactive hydrogen species, ion bombardment flux and likely photon flux. Optical Emission Spectroscopy (OES) of the H2 plasma during the Cu etching process detects Cu emission lines, but is unable to identify specific Cu etch products that desorb from the etching surface. Variation of Cu etch rates as a function of temperature suggests a change in mechanism for the removal of Cu over the temperature of -150 °C to 150 °C. OES analyses also suggest that the Cl2 plasma step in the two-step process can inhibit Cu etching, since the subsequent H2 (second) plasma step shows a time delay in film removal. Preliminary results of the etching of the SiO2 mask material in H2 plasmas with various intentionally introduced contaminants demonstrate the robustness of the H2 plasma Cu etch process.

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt: