Download or read book Materials Reliability in Microelectronics V Volume 391 written by Anthony S. Oates and published by . This book was released on 1995-10-24 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.

Download or read book 1995 International Symposium on VLSI Technology Systems and Applications written by and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1995 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selected Semiconductor Research written by Ming Fu Li and published by World Scientific. This book was released on 2011-02-28 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a

Download or read book Proceedings of Technical Papers written by and published by . This book was released on 1995 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book IBM Journal of Research and Development written by and published by . This book was released on 1999 with total page 958 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Download or read book 2002 7th International Symposium on Plasma and Process Induced Damage written by and published by . This book was released on 2002 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book IEICE Transactions on Electronics written by and published by . This book was released on 1995 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book In line Methods and Monitors for Process and Yield Improvement written by Sergio Ajuria and published by SPIE-International Society for Optical Engineering. This book was released on 1999 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: These conference proceedings consist of 47 papers addressing a variety of issues concerning in-line methods and monitors for process and yield improvement.

Download or read book Microelectronic Failure Analysis written by Richard J. Ross and published by ASM International(OH). This book was released on 1999 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Forty-seven papers on electronics failure analysis provide an overview for newcomers to the field and a reference tool for the experienced analyst. Topics include electron/ion bean-based techniques, deprocessing and sample preparation, and physical/chemical defect characterization. For the fourth ed

Download or read book Microelectronic Device and Multilevel Interconnection Technology written by and published by . This book was released on 1995 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book IEEE International Reliability Physics Symposium Proceedings written by International Reliability Physics Symposium and published by . This book was released on 2004 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1997 with total page 1468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Charging Damage written by Kin P. Cheung and published by Springer Science & Business Media. This book was released on 2000-10-04 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.