Download or read book Photonics and Electronics with Germanium written by Kazumi Wada and published by John Wiley & Sons. This book was released on 2015-08-10 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.

Download or read book Photonics and Electronics with Germanium written by Kazumi Wada and published by John Wiley & Sons. This book was released on 2015-05-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.

Download or read book Strain Engineering Germanium tin in Group IV Photonics written by Colleen Shang Fenrich and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The scaling of technology nodes to smaller length scales has enabled unprecedented growth for silicon integrated circuits (IC). The reduction of critical feature dimensions has allowed larger densities of integrated components and improved performance on the device level. At the same time, however, scaling has presented increasing challenges for the performance of global electrical interconnects, which comprise the longest wire lengths on a chip. One solution to overcoming the limitations of electrical interconnect technology is the integration of optical interconnects. While optical communications has already been employed on much larger length scales, the application of optical interconnects for chip-to-chip and on-chip communications has yet to be realized. In the IC industry, the silicon (Si) complementary metal-oxide-semiconductor (CMOS) platform has unified and enabled large-scale integration, but Si performs poorly as an active optical material due to its indirect band gap. As a result, an integrated Si laser has remained elusive in Si photonics, although the ability to leverage this platform for photonic integration has the potential to achieve low cost and high-throughput manufacturing, while maintaining compatibility with CMOS electronics. Developing a tunable direct band gap group IV semiconductor can instead be achieved using the binary germanium-tin system. The incorporation of Sn into the Ge crystal reduces the energy difference between the direct and indirect conduction band minima. A major challenge of the germanium-tin system is lattice mismatch with respect to Si or Ge-buffered Si substrates. Significant compressive strain arises from the coherent epitaxial growth of germanium-tin on these substrates, which inhibits the onset of the fundamental direct gap. This dissertation explores methods of strain engineering pseudomorphic germanium-tin epitaxy to relieve lattice mismatch strain that inhibits the onset of the fundamental direct band gap.

Download or read book Photonic Integration and Photonics Electronics Convergence on Silicon Platform written by Koji Yamada and published by Frontiers Media SA. This book was released on 2015-11-10 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon photonics technology, which has the DNA of silicon electronics technology, promises to provide a compact photonic integration platform with high integration density, mass-producibility, and excellent cost performance. This technology has been used to develop and to integrate various photonic functions on silicon substrate. Moreover, photonics-electronics convergence based on silicon substrate is now being pursued. Thanks to these features, silicon photonics will have the potential to be a superior technology used in the construction of energy-efficient cost-effective apparatuses for various applications, such as communications, information processing, and sensing. Considering the material characteristics of silicon and difficulties in microfabrication technology, however, silicon by itself is not necessarily an ideal material. For example, silicon is not suitable for light emitting devices because it is an indirect transition material. The resolution and dynamic range of silicon-based interference devices, such as wavelength filters, are significantly limited by fabrication errors in microfabrication processes. For further performance improvement, therefore, various assisting materials, such as indium-phosphide, silicon-nitride, germanium-tin, are now being imported into silicon photonics by using various heterogeneous integration technologies, such as low-temperature film deposition and wafer/die bonding. These assisting materials and heterogeneous integration technologies would also expand the application field of silicon photonics technology. Fortunately, silicon photonics technology has superior flexibility and robustness for heterogeneous integration. Moreover, along with photonic functions, silicon photonics technology has an ability of integration of electronic functions. In other words, we are on the verge of obtaining an ultimate technology that can integrate all photonic and electronic functions on a single Si chip. This e-Book aims at covering recent developments of the silicon photonic platform and novel functionalities with heterogeneous material integrations on this platform.

Download or read book High Speed Low Driving Voltage Vertical Cavity Germanium silicon Modulators for Optical Interconnect written by Yiwen Rong and published by Stanford University. This book was released on 2010 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects. Previous work demonstrated modulators based upon the quantum confined Stark effect (QCSE) in SiGe p-i-n devices with strained Ge/SiGe multi-quantum-well (MQW) structures in the i region. While the previous work demonstrated the effect, it did not examine the high-speed aspects of the device, which is the focus of this dissertation. High-speed modulation and low driving voltage are the keys for the device's practical use. At lower optical intensity operation, the ultimate limitation in speed will be the RC time constant of the device itself. At high optical intensity, the large number of photo generated carriers in the MQW region will limit the performance of the device through photo carrier related voltage drop and exciton saturation. In previous work, the devices consist of MQWs configured as p-i-n diodes. The electric field induced absorption change by QCSE modulates the optical transmission of the device. The focus of this thesis is the optimization of MQW material deposition, minimization of the parasitic capacitance of the probe pads for high speed, low voltage and high contrast ratio operation. The design, fabrication and high-speed characterization of devices of different sizes, with different bias voltages are presented. The device fabrication is based on processes for standard silicon electronics and is suitable for mass-production. This research will enable efficient transceivers to be monolithically integrated with silicon chips for high-speed optical interconnects. We demonstrated a modulator, with an eye diagram of 3.125GHz, a small driving voltage of 2.5V and an f3dB bandwidth greater than 30GHz. Carrier dynamics under ultra-fast laser excitation and high-speed photocurrent response are also investigated.

Download or read book Monolithic Nanoscale Photonics Electronics Integration in Silicon and Other Group IV Elements written by Henry Radamson and published by Academic Press. This book was released on 2014-09-17 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon photonics, including the reasons for its rapid expansion, its possibilities and limitations. It discusses the applications of these technologies for such applications as memory, digital logic operations, light sources, including drive electronics, optical modulators, detectors, and post detector circuitry. It will appeal to engineers in the fields of both electronics and photonics who need to learn more about the basics of the other field and the prospects for the integration of the two. Combines the topics of photonics and electronics in silicon and other group IV elements Describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon photonics

Download or read book High Speed Germanium Silicon Modulators For Optical Interconnect written by Yiwen Rong and published by LAP Lambert Academic Publishing. This book was released on 2014-11-28 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information processing requires interconnects to carry information from one place to another. Optical interconnects between electronics systems have attracted significant attention and development for a number of years because optical links have demonstrated potential advantages for high-speed, low-power, and interference immunity. With increasing system speed and greater bandwidth requirements, the distance over which optical communication is useful has continually decreased to chip-to-chip and on-chip levels. Monolithic integration of photonics and electronics will significantly reduce the cost of optical components and further combine the functionalities of chips on the same or different boards or systems. Modulators are one of the fundamental building blocks for optical interconnects.

Download or read book Sinep 2009 1st International Workshop on Si Based Nano Electronics and Photonics written by Steafno Chiussi and published by Netbiblo. This book was released on 2009-06 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this International Workshop in Vigo is to target this major problem by bringing together scientists and engineers specialized on various different topics related to group IV semiconductors. In five consecutive sessions dedicated to - Group IV materials: CMOS and further extension of the roadmap - Group IV materials: Nano-photonics - Material aspects and characterization on nano-scale - Nanostructures and material processing on atomic scale

Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Download or read book 2D Nanoelectronics written by Mircea Dragoman and published by Springer. This book was released on 2016-12-01 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed. Both authors are working currently on these 2D materials developing theory and applications.

Download or read book Electronic and Optical Properties of Ge Si Superlattices written by Thomas P. Pearsall and published by . This book was released on 1994 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Silicon Photonics written by Laurent Vivien and published by Taylor & Francis. This book was released on 2016-04-19 with total page 831 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,

Download or read book Silicon Photonics Design written by Lukas Chrostowski and published by Cambridge University Press. This book was released on 2015-03-12 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: From design and simulation through to testing and fabrication, this hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs. In-depth discussion of real-world issues and fabrication challenges ensures that students are fully equipped for careers in industry. Step-by-step tutorials, straightforward examples, and illustrative source code fragments guide students through every aspect of the design process, providing a practical framework for developing and refining key skills. Offering industry-ready expertise, the text supports existing PDKs for CMOS UV-lithography foundry services (OpSIS, ePIXfab, imec, LETI, IME and CMC) and the development of new kits for proprietary processes and clean-room based research. Accompanied by additional online resources to support students, this is the perfect learning package for senior undergraduate and graduate students studying silicon photonics design, and academic and industrial researchers involved in the development and manufacture of new silicon photonics systems.

Download or read book Silicon Photonics II written by David J. Lockwood and published by Springer Science & Business Media. This book was released on 2010-10-13 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

Download or read book Single crystal Germanium Growth on Amorphous Silicon written by Kevin A. McComber and published by . This book was released on 2011 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling delays and heating issues such that signal transduction across large on-chip distances becomes increasingly more difficult. However, these issues may be mitigated by the use of photonic interconnects combined with electronic devices in electronic-photonic integrated circuits (EPICs). The electronics in proposed EPIC designs perform the logic operations and short-distance signal transmission, while photonic devices serve to transmit signals over longer lengths. However, the photonic devices are large compared to electronic devices, and thus the two types of devices would ideally exist on separate levels of the microprocessor stack in order to maximize the amount of silicon substrate available for electronic device fabrication. A CMOS-compatible back-end process for the fabrication of photonic devices is necessary to realize such a three-dimensional EPIC. Back-end processing is limited in thermal budget and does not present a single-crystal substrate for epitaxial growth, however, so high-quality crystal fabrication methods currently used for photonic device fabrication are not possible in back-end processing. This thesis presents a method for the fabrication of high-quality germanium single crystals using CMOS-compatible back-end processing. Initial work on the ultra-high vacuum chemical vapor deposition of polycrystalline germanium on amorphous silicon is presented. The deposition can be successfully performed by using a pre-growth hydrofluoric acid dip and by limiting the thickness of the amorphous silicon layer to less than 120 nm. Films deposited at temperatures of 350° C, 450° C, and 550° C show (110) texture, though the texture is most prevalent in growths at 450° C. Poly-Ge grown at 4500 C is successfully doped n-type in situ, and the grain size of as-grown material is enhanced by lateral growth over a barrier. Structures are fabricated for the growth of Ge confined in one dimension. The growths show faceting across large areas, in contrast to as-deposited poly-Ge, corresponding to enhanced grain sizes. Growth confinement is shown to reduce the defect density as the poly-Ge grows. When coalesced into a continuous film, the material grown from 1 D confinement exhibits a lower carrier density and lower trap density than as-deposited poly-Ge, indicating improved material quality. We measure an increased grain size from as-deposited poly-Ge to Ge grown from ID confinement. Single-crystal germanium is grown at 450° C from confinement in two dimensions. Such growths exhibit faceting across the entire crystal as well as the presence of E3 boundaries ({111} twins), with many growths showing no other boundaries. These twins mediate the growth of the crystal, as they serve as the points for heterogeneous surface nucleation of adatom clusters. The twins can form after the crystal nucleates and are strongly preferred in order to obtain appreciable crystal growth rates. We model the growths from the confining channels in order to find the optimum channel geometry for large, uniform, single-crystal growths that consistently emerge from the channel. The growths from 2D confinement show lower trap density than those from 1 D confinement, indicating a further enhancement of the crystal quality due to the increased confinement. This method of single-crystal growth from an amorphous substrate is extensible to any materials system in which selective non-epitaxial deposition is possible.

Download or read book Nanotechnology for Electronics Photonics and Renewable Energy written by Anatoli Korkin and published by Springer Science & Business Media. This book was released on 2010-12-14 with total page 279 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tutorial lectures given by world-renowned researchers have become one of the important traditions of the Nano and Giga Challenges (NGC) conference series. 1 Soon after preparations had begun for the rst forum, NGC2002, in Moscow, Russia, the organizers realized that publication of the lectures notes would be a va- able legacy of the meeting and a signi cant educational resource and knowledge base for students, young researchers, and senior experts. Our rst book was p- lished by Elsevier and received the same title as the meeting itself—Nano and Giga 2 Challenges in Microelectronics. Our second book, Nanotechnology for Electronic 3 4 Materials and Devices, based on the tutorial lectures at NGC2004 in Krakow, 5 Poland, the third book from NGC2007 in Phoenix, Arizona, and the current book 6 from joint NGC2009 and CSTC2009 meeting in Hamilton, Ontario, have been published in Springer’s Nanostructure Science and Technology series. Hosted by McMaster University, the meeting NGC/CSTC 2009 was held as a joint event of two conference series, Nano and Giga Challenges (Nano & Giga Forum) and Canadian Semiconductor Technology Conferences (CSTC), bringing together the networks and expertise of both professional forums. Informational (electronics and photonics), renewable energy (solar systems, fuel cells, and batteries), and sensor (nano and bio) technologies have reached a new stage in their development in terms of engineering limits to cost-effective impro- ment of current technological approaches. The latest miniaturization of electronic devices is approaching atomic dimensions.

Download or read book Advanced Material and Device Applications with Germanium written by Sanghyun Lee and published by BoD – Books on Demand. This book was released on 2018-10-03 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the scope of their knowledge.