Download or read book Photoluminescence Study of Gallium Arsenide Epitaxial Materials written by Jung-Kuei Hsu and published by . This book was released on 1987 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Study of Gallium Arsenide Aluminum Gallium Arsenide and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition written by John Mark Koons and published by . This book was released on 1994 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al2̣5Ga--̣5As on a GaAs substrate, Al3̣0Ga--̣0As on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al3̣0Ga--̣0As samples exhibited typical spectra for MOCVD grown samples produced by other sources in the widths of the resulting BE peaks and in the characteristics, of their acceptor-induced transitions. The narrow, prominent BE peaks of the Al2̣5Ga--̣5As and GaSb samples had shown them to be of exceptional quality.

Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of Heteroepitaxial Gallium Arsenide on Silicon written by Chen-Jen Huang and published by . This book was released on 1989 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Studies of III V Semiconductors written by Gary William Wicks and published by . This book was released on 1981 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Journal of Research of the National Institute of Standards and Technology written by and published by . This book was released on 1994 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.

Download or read book Luminescence and Diode Studies in Liquid Phase Epitaxy Gallium Arsenide Material Doped with Geranium and Copper written by Roberto Romano-Moran and published by . This book was released on 1972 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Materials for Optoelectronic Devices OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence of Heavily Zinc doped Gallium Arsenide and Gallium Indium Arsenide Grown by Low pressure Metal Organic Vapour Phase Epitaxy written by Roberto Benzaquen and published by . This book was released on 1991 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organic vapour phase epitaxy with free carrier concentrations in the range of n = 4.3 $\times$ 10$\sp {\rm cm}\sp{-3}$ (nominally undoped)--p = 1.95 x 10$\sp{20} {\rm cm}\sp{-3}$ at room temperature have been studied by temperature-dependent photoluminescence. At low doping levels, recombinations involving discrete impurity states and free excitons provided measurement of both the 5 K band gap ($E\sb{g}(5)=(1.296\pm0.003)$ eV) and the zinc acceptor binding energy $(E(Zn\sp0)=(0.025\pm0.003)$ eV) in the $\rm Ga\sb{0.85}In\sb{0.15}As$ alloy. At high concentrations, the discrete acceptor levels are replace by an impurity band which merges with the valence band above the Mott$\sp{\lbrack 1\rbrack}$ transition. This gives rise to a density of states band tail extending into the gap and containing both extended and localised states. In the presence of such a high density of impurities, potential fluctuations and interparticle interactions result in a band gap shrinkage $\vert \Delta E\sb{g}\vert$ which has been observed with photoluminescence experiments. A model based on the presence of Kane$\sp{\lbrack 2\rbrack}$ band tails and on the assumption of a constant matrix element for the relevant optical transitions has been fitted to the photoluminescence spectra of heavily doped layers of GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ in the range of $p=1.6\times 10\sp $ cm$\sp{-3}-p=1.95\times 10\sp{20}$ cm$\sp{-3}.$ This model provided a good description of the experimental results. The 5 K band gap shrinkage has been found to be $\vert\Delta E\sb{g}\vert=2.7\times 10\sp{-8}p\sp{1/3}$ for GaAs and $\vert\Delta E\sb{g}\vert=1.4\times 10\sp{-8}p\sp{1/3}$ for $\rm Ga\sb{0.85}In\sb{0.15}As$ with $\vert\Delta E\sb{g}\vert$ in Ev and p in cm$\sp{-3}.$

Download or read book Chromium doped Semi insulating Gallium Arsenide Grown by Liquid Phase Epitaxy written by David William Woodard and published by . This book was released on 1979 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 32 (thesis year 1987) a total of 12,483 theses titles from 22 Canadian and 176 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 32 reports theses submitted in 1987, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Download or read book Molecular beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide indium Gallium Arsenide Single Quantum well Modulation doped Field effect Transistor Structures written by David Constantine Radulescu and published by . This book was released on 1988 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Cathodoluminescence and Photoluminescence Study of Silicon Implanted Gallium Arsenide written by Daniel L. DeForest and published by . This book was released on 1982 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Depth resolved photoluminescence and cathodoluminescence data were obtained from gallium arsenide implanted with 120 keV silicon ions. The luminescence data were studied as a function of depth in an effort to determine the implant damage profile of the silicon in GaAs. A chemical etchant was used to etch off successive layers of the crystal surface. The substrate material used for this study was bulk GaAs, grown by the Liquid-Encapsulated Czochralski (LEC) method. (Author).

Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: