EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Photoluminescence Spectroscopy of Erbium Implanted Gallium Nitride

Download or read book Photoluminescence Spectroscopy of Erbium Implanted Gallium Nitride written by Myo Thaik and published by . This book was released on 1998 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Photoluminescence Study of GaN Implanted with Erbium and Erbium Oxygen

Download or read book Photoluminescence Study of GaN Implanted with Erbium and Erbium Oxygen written by Lori Everitt and published by . This book was released on 1997-12-01 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: Erbium emits at 1540 nm, which propagates well through fiber optic cables. This work studies the photoluminescence (PL) from GaN, GaN implanted with Er alone, and GaN implanted with both Er and O as functions of excitation laser energy and sample temperature. When the exciton bound to a neutral donor recombined, a photon was emitted at 3.47 eV. A photon emitted at 3.457 eV may have been evidence of the recombination of an exciton bound to a neutral acceptor. Second, the Er-ion transitions were observed in two groups around 0. 805 and 1.25 eV. The PL intensity was measured at four laser excitation wavelengths of 275.4-305.5, 333.6-363.8, 488.0, and 514.5 nm from an Ar-ion laser. Although the PL intensities from GaN:Er were strongest when the sample was excited by the 275.4-305.5 nm multiline, the PL emissions from GaN:Er+O were strongest when excited with the 333.6-363.8 nm line. Regardless, both above and below bandgap laser lines induced strong PL intensities. Third, PL form the two samples was studied as temperature was increased from 2 to 150 K. In general, the intensities of most peaks decreased as temperature was raised in both samples, but the PL signals persist even at 150 K.

Book Photoluminescence Study of GaN Implanted with Erbium and Erbium oxygyn

Download or read book Photoluminescence Study of GaN Implanted with Erbium and Erbium oxygyn written by Lori R. Everitt and published by . This book was released on 1997 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Advanced Rare Earth Based Ceramic Nanomaterials

Download or read book Advanced Rare Earth Based Ceramic Nanomaterials written by Sahar Zinatloo-Ajabshir and published by Elsevier. This book was released on 2022-01-15 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced Rare Earth-Based Ceramic Nanomaterials focuses on recent advances related to preparation methods and applications of advanced rare earth-based ceramic nanomaterials. Different approaches for synthesizing rare earth-based ceramic nanomaterials are discussed, along with their advantages and disadvantages for applications in various fields. Sections cover rare earth-based ceramic nanomaterials like ceria and rare earth oxides (R2O3), rare earth vanadates, rare earth titanates, rare earth zirconates, rare earth stannates, rare earth-based tungstates, rare earth-based manganites, ferrites, cobaltites, nickelates, rare earth doped semiconductor nanomaterials, rare earth molybdates, rare earth-based nanocomposites, rare earth-based compounds for solar cells, and laser nanomaterials based on rare-earth compounds. Reviews the chemistry and processing of rare earth doped ceramic nanomaterials and their characteristics and applications Covers a broad range of materials, including ceria and rare earth oxides (R2O3), vanadates, titanates, zirconates, stannates, tungstates, manganites, ferrites, cobaltites, nickelates, rare earth doped semiconductor nanomaterials, rare earth molybdates, rare earth-based nanocomposites, rare earth-based compounds for solar cells, and laser nanomaterials based on rare-earth compounds Includes different approaches to synthesizing each family of rare earth-based ceramic nanomaterials, along with their advantages and disadvantages Provides green chemistry-based methods for the preparation of advanced rare earth-based ceramic nanomaterials

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book High Resolution Ultraviolet Photoluminescence Spectroscopy Study of Gallium Nitride

Download or read book High Resolution Ultraviolet Photoluminescence Spectroscopy Study of Gallium Nitride written by William D. Herzog and published by . This book was released on 1994 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty Eighth State of the Art Program on Compound Semiconductors

Download or read book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty Eighth State of the Art Program on Compound Semiconductors written by H. Q. Hou and published by The Electrochemical Society. This book was released on 1998 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Nitride Semiconductors  Volume 482

Download or read book Nitride Semiconductors Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

Book International Aerospace Abstracts

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1048 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenide

Download or read book Photoluminescence Study of Silicon and Oxygen Implanted Gallium Arsenide written by Kevin J. Keefer (CAPT, USAF.) and published by . This book was released on 1985 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Ceramic Abstracts

Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Semiconductors

Download or read book Semiconductors written by and published by . This book was released on 2005-07 with total page 802 pages. Available in PDF, EPUB and Kindle. Book excerpt: English translation of Fizika i tekhnika poluprovodnikov; covers semiconductor research in countries of the Former Soviet Union. Topics include semiconductor theory, transport phenomena in semiconductors, optics, magneto-optics, and electro-optics of semiconductors, semiconductor lasers, and semiconductor surface physics. Includes book reviews.

Book GaN and Related Alloys  Volume 537

Download or read book GaN and Related Alloys Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

Book Defects in Semiconductors  ICDS 19

Download or read book Defects in Semiconductors ICDS 19 written by and published by . This book was released on 1997 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Photoluminescence from Gan Co doped with C and Si

Download or read book Photoluminescence from Gan Co doped with C and Si written by Mykhailo Vorobiov and published by . This book was released on 2018 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relatively) bands in Gallium Nitride samples doped with C and Si. The band BLc was at first observed in the steady-state photoluminescence spectrum under high excitation intensities and discerned from BL1 and BL2 bands appearing in the same region of the spectrum. Using the time-resolved photoluminescence spectrum, we were able to determine the shape of the BLc and its position at 2.87 eV. Internal quantum efficiency of the YL band was estimated to be 90%. The hole capture coefficient of the BLc related state was determined as 7 10−10 cm3/s. Properties of BLc were investigated. The YL and BLc bands are attributed to electron transitions via the (0/- ) and (+/0) transition levels of the Cn defect.

Book Photoluminescence Spectroscopy of GaN Based Materials and Light Emitting Diodes

Download or read book Photoluminescence Spectroscopy of GaN Based Materials and Light Emitting Diodes written by Ibrahim Yilmaz and published by . This book was released on 2004 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: