Download or read book Photoconductivity Studies of Radiation induced Defects in Silicon written by Rosa Ting-I. Young and published by . This book was released on 1972 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoconductivity of Radiation Induced Defects in Silicon written by Andrew L. Bates and published by . This book was released on 1972 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Determination of the Presence and Degree of Photoconductivity Due to Radiation Induced Defect Levels in Silicon written by Allen Morton Barnwell and published by . This book was released on 1969 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Induced Photoconductivity in Germanium Silicon and Gallium Arsenide written by Ronald O. Deming and published by . This book was released on 1972 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Infrared Photoconductivity of Electron Irradiated Phosphorus Doped Silicon written by Rosa C. Young and published by . This book was released on 1971 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: The annealing behavior and the uniaxial stress responses of the radiation - induced defect causing the (E sub C) - 0.75 eV, (E sub C) - 0.42 eV and (E sub C) - 0.18 eV photoconductivity energy levels in n-type silicon were studied after 1.5 MeV electron and 60Co gamma ray irradiation. The results suggest that the (E sub C) - 0.75 eV level arises from the electronic transition of the neutral charge state of the divacancy to the conduction band, the (E sub C) - 0.18 eV level arises from the A-center defect which exhibits only one kind of stress response, i.e. the atomic redistribution among the allowable orientations. No electronic response can be observed for the A-center in the case of photoconductivity measurements. The data fit very well with the A-center model given by G.D. Watkins and J.W. Corbett. (Author).

Download or read book Deep Level Transient Spectroscopy Studies of Radiation Induced Defects in Silicon written by John Richard Troxell and published by . This book was released on 1979 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1972 with total page 1534 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Semiconductors and Semiconductor Devices written by V. S. Vavilov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Deep Level Transient Spectroscopy of Radiation induced Defects and Their Complexes in Silicon written by and published by . This book was released on 1993 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1972-04 with total page 1068 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book New Optical Method for Studying Defects in Silicon written by Michael T. Mitchell and published by . This book was released on 1978 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new optical method incorporating two monochromatic light beams incident on the sample whose temperature is at approx. 78 K is used to study infrared active radiation-induced defect absorption bands. Defect energy levels, photoionization excitation and deexcitation processes were examined for the divacancy associated bands found in the 3 - 3.6 micron wavelength region and two higher order bands which appear in the 7 to 14 micron wavelength region. For the divacancy band region 100hms-cm and 0.10hm-cm n-type (P-doped) crucible grown silicon irradiated to 5 x 10 to the 18th power neutrons/sq cm (E> 1 MeV) were examined. An excitation energy (E sub e) of width 0.81eV to 0.89eV was found to produce an absorption throughout the entire 3.3 micron absorption band region with a maximum absorption occurring around 3.1 micron. A model is proposed which incorporates direct band gap transitions. A 200ohm-cm p-type (B- doped) crucible grown silicon sample irradiated to 5 x 10 to the 18th power neutrons/sq cm (E> 1 MeV) and annealed at 500 C for 15 minutes was examined for higher order bands. The 9.54 micron and 9.08 micron bands were found to have a maximum absorption for band gap energy. a model is proposed for the photoionization process incorporating the band gap energy for absorption and a depletion energy of 0.74eV.

Download or read book NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration Scientific and Technical Information Division and published by . This book was released on 1967 with total page 2300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1969 with total page 1502 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Download or read book Semiconducting Devices written by A. H. Agajanian and published by Ifi/Plenum. This book was released on 1976 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence from Irradiation Induced Defects in Silicon written by John Robert Noonan and published by . This book was released on 1974 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: New information concerning the identification of radiative defects in Si is provided by three sets of experiments which study the photoluminescence from Si irradiated with electrons at low temperature (100K), Si subjected to ion implantations, and electron irradiations of Al and Ga doped Si. (Modified author abstract).