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Book Optimization on the Electrical Performance of the Solution Processed Zinc Tin Oxide Thin film Transistors and Its Application Research for Artificial Synapses

Download or read book Optimization on the Electrical Performance of the Solution Processed Zinc Tin Oxide Thin film Transistors and Its Application Research for Artificial Synapses written by Tianshi Zhao and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Solution processed Zinc tin Oxide Thin film Transistors and Circuit Applications

Download or read book Solution processed Zinc tin Oxide Thin film Transistors and Circuit Applications written by Chen-Guan Lee and published by . This book was released on 2011 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous oxide semiconductors are of potential interest in the display industry due to their high carrier mobility, transparency at visible wavelengths and excellent operational stability. In this dissertation, n-channel zinc-tin oxide thin-film transistors are fabricated based on a solution-based deposition approach, which allows low fabrication cost and high throughput. The effects of device configuration and process conditions on transistor performance are investigated, and circuit applications including inverters, amplifiers, and ring oscillators are demonstrated. Charge transport in the zinc-tin oxide field-effect transistors is also investigated. A transition from thermally-activated to band-like transport is observed with increasing carrier concentration in high mobility samples, which agrees well with the key predictions of the multiple trap and release model and also Mott's mobility edge model. In addition, velocity distribution of charge carriers is studied with a time-resolved technique. This provides a more detailed picture of charge transport in field-effect transistors. P-channel organic semiconductor field-effect transistors are also investigated with a view to combine them with n-channel amorphous oxide transistors to create a hybrid organic-inorganic complementary technology.

Book Film Growth and Electrical Properties of Solution Processed Zinc Oxide in Thin Film Transistors

Download or read book Film Growth and Electrical Properties of Solution Processed Zinc Oxide in Thin Film Transistors written by Marlis Ortel and published by . This book was released on 2013 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: High performance TFTs showing excellent stability even in air were developed based on investigations describing physical and chemical mechanisms related to zinc oxide film growth and its electrical properties. Therefore the growth and nucleation of zinc oxide thin films deposited by pulsed spray pyrolysis utilizing non-toxic materials were correlated to the boiling curve and Leidenfrost effect of water which was employed as solvent. The optimized deposition parameters were utilized to fabricate ZnO-TFTs. Different growth conditions and their impact on trap state formation inside the bulk material were analyzed taking chemical purity and grain boundary models into account. Moreover it was distinguished between the contribution of surface and bulk trap state on the storage and gate bias stress stability in different atmospheres. Mainly surface states which are sensitive to humid atmosphere show significant impact on the electrical stability of TFTs. Hence different fluoro-terminated compounds which bind selective on active surface sites which are either related to Zn2+-ions or hydroxyl-groups were investigated. 4,4,4-Trifluoro-1-phenylbutane-1,3-dione which chalets to Zn2+-ions was found to be a suitable candidate to reduce the number of surface trap states significantly which leads to highly stable TFT performance and a strong increase in mobility. Since this approach has not been reported elsewhere yet a patent application was filed.

Book Solution Processed Zinc Oxide Thin film Transistors

Download or read book Solution Processed Zinc Oxide Thin film Transistors written by Hendrik Andreas Faber and published by . This book was released on 2012 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Amorphous Oxide Semiconductors

Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Book Electric Double Layer Coupled Oxide Based Neuromorphic Transistors Studies

Download or read book Electric Double Layer Coupled Oxide Based Neuromorphic Transistors Studies written by Changjin Wan and published by Springer. This book was released on 2018-12-15 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on essential synaptic plasticity emulations and neuromorphic computing applications realized with the aid of three-terminal synaptic devices based on ion-coupled oxide-based electric-double-layer (EDL) transistors. To replicate the robust, plastic and fault-tolerant computational power of the human brain, the emulation of essential synaptic plasticity and computation of neurons/synapse by electronic devices are generally considered to be key steps. The book shows that the formation of an EDL at the dielectric/channel interface that slightly lags behind the stimuli can be attributed to the electrostatic coupling between ions and electrons; this mechanism underlies the emulation of short-term synaptic behaviors. Furthermore, it demonstrates that electrochemical doping/dedoping processes in the semiconducting channel by penetrated ions from electrolyte can be utilized for the emulation of long-term synaptic behaviors. Lastly, it applies these synaptic transistors in an artificial visual system to demonstrate the potential for constructing neuromorphic systems. Accordingly, the book offers a unique resource on understanding the brain-machine interface, brain-like chips, artificial cognitive systems, etc.

Book Field effect Transistors Based on Solution Processed Zinc Tin Oxide

Download or read book Field effect Transistors Based on Solution Processed Zinc Tin Oxide written by Benedikt Sykora and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book An Investigation of the Performance and Stability of Zinc Oxide Thin film Transistors and the Role of High k Dielectrics

Download or read book An Investigation of the Performance and Stability of Zinc Oxide Thin film Transistors and the Role of High k Dielectrics written by Ngwashi Divine Khan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent oxide semiconducting films have continued to receive considerable attention, from a fundamental and application-based point of view, primarily because of their useful fundamental properties. Of particular interest is zinc oxide (ZnO), an n-type semiconductor that exhibits excellent optical, electrical, catalytic and gas-sensing properties, and has many applications in various fields. In this work, thin film transistor (TFT) arrays based on ZnO have been prepared by reactive radio frequency (RF) magnetron sputtering. Prior to the TFT fabrication, ZnO layers were sputtered on to glass and silicon substrates, and the deposition parameters optimised for electrical resistivities suitable for TFT applications. The sputtering process was carried out at room temperature with no intentional heating. The aim of this work is to prepare ZnO thin films with stable semiconducting electrical properties to be used as the active channel in TFTs; and to understand the role of intrinsic point defects in device performance and stability. The effect of oxygen (O2) adsorption on TFT device characteristics is also investigated. The structural quality of the material (defect type and concentration), electrical and optical properties (transmission/absorption) of semiconductor materials are usually closely correlated. Using the Vienna ab-initio simulation package (VASP), it is predicted that O2 adsorption may influence film transport properties only within a few atomic layers beneath the adsorption site. These findings were exploited to deposit thin films that are relatively stable in atmospheric ambient with improved TFT applications. TFTs incorporating the optimised layer were fabricated and demonstrated very impressive performance metrics, with effective channel mobilities as high as 30 cm2/V-1s-1, on-off current ratios of 107 and sub-threshold slopes of 0.9? 3.2 V/dec. These were found to be dependent on film thickness (~15? 60 nm) and the underlying dielectric (silicon dioxide (SiO2), gadolinium oxide (Gd2O3), yttrium oxide (Y2O3) and hafnium oxide (HfO2)). In this work, prior to sputtering the ZnO layer (using a ZnO target of 99.999 % purity), the sputtering chamber was evacuated to a base pressure ~4 x 10-6 Torr. Oxygen (O2) and argon (Ar) gas (with O2/Ar ratio of varying proportions) were then pumped into the chamber and the deposition process optimised by varying the RF power between 25 and 500 W and the O2/Ar ratio between 0.010 to 0.375. A two-level factorial design technique was implemented to test specific parameter combinations (i.e. RF power and O2/Ar ratio) and then statistical analysis was utilised to map out the responses. The ZnO films were sputtered on glass and silicon substrates for transparency and resistivity measurements, and TFT fabrication respectively. For TFT device fabrication, ZnO films were deposited onto thermally-grown silicon dioxide (SiO2) or a high-k dielectric layer (HfO2, Gd2O3 and Y2O3) deposited by a metal-organic chemical deposition (MOCVD) process. Also, by using ab initio simulation as implemented in the?Vienna ab initio simulation package (VASP)?, the role of oxygen adsorption on the electrical stability of ZnO thin film is also investigated. The results indicate that O2 adsorption on ZnO layers could modify both the electronic density of states in the vicinity of the Fermi level and the band gap of the film. This study is complemented by studying the effects of low temperature annealing in air on the properties of ZnO films. It is speculated that O2 adsorption/desorption at low temperatures (150? 350 0C) induces variations in the electrical resistance, band gap and Urbach energy of the film, consistent with the trends predicted from DFT results.

Book Investigation of Oxide Semiconductor Based Thin Films

Download or read book Investigation of Oxide Semiconductor Based Thin Films written by Meena Suhanya Rajachidambaram and published by . This book was released on 2012 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured ZnO films were obtained via thermal oxidation of thin films formed with metallic Zn-nanoparticle dispersions. Commercial zinc nanoparticles used for this work were characterized by microscopic and thermal analysis methods to analyze the Zn-ZnO core shell structure, surface morphology and oxidation characteristics. These dispersions were spin-coated on SiO2/Si substrates and then annealed in air between 100 and 600 °C. Significant nanostructural changes were observed for the resulting films, particularly those from larger Zn nanoparticles. These nanostructures, including nanoneedles and nanorods, were likely formed due to fracturing of ZnO outer shell due to differential thermal expansion between the Zn core and the ZnO shell. At temperatures above 227 °C, the metallic Zn has a high vapor pressure leading to high mass transport through these defects. Ultimately the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. We have found that the resulting films annealed above 400 °C had high electrical resistivity. The zinc nanoparticles were incorporated into zinc indium oxide solution and spin-coated to form thin film transistor (TFT) test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing. The functionalization of zinc tin oxide (ZTO) films with self-assembled monolayers (SAMs) of n-hexylphosphonic acid (n-HPA) was investigated. The n-HPA modified ZTO surfaces were characterized using contact angle measurement, x-ray photoelectron spectroscopy (XPS) and electrical measurements. High contact angles were obtained suggesting high surface coverage of n-HPA on the ZTO films, which was also confirmed using XPS. The impact of n-HPA functionalization on the stability of ZTO TFTs was investigated. The n-HPA functionalized ZTO TFTs were either measured directly after drying or after post-annealing at 140 °C for 48 hours in flowing nitrogen. Their electrical characteristics were compared with that of non-functionalized ZTO reference TFTs fabricated using identical conditions. We found that the non-functionalized devices had a significant turn-on voltage (V[subscript ON]) shift of ~0.9 V and ~1.5 V for the non-annealed and the post-annealed conditions under positive gate bias stress for 10,000 seconds. The n-HPA modified devices showed very minimal shift in V[subscript ON] (0.1 V), regardless of post-thermal treatment. The VON instabilities were attributed to the interaction of species from the ambient atmosphere with the exposed ZTO back channel during gate voltage stress. These species can either accept or donate electrons resulting in changes in the channel conductance with respect to the applied stress.

Book Atomic Layer Deposited Zinc Oxide tin Oxide Nanolaminates and Its Applications in Thin Film Transistors and Thermoelectric Materials

Download or read book Atomic Layer Deposited Zinc Oxide tin Oxide Nanolaminates and Its Applications in Thin Film Transistors and Thermoelectric Materials written by 洪心寧 and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: