Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer. This book was released on 2012-08-28 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2010-05-26 with total page 487 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals and also on their kinetics and transformations under annealing. After an introduction of the bulk optical properties of semiconductors and insulators and of impurities in crystals, this book presents the physical bases necessary for the understanding of impurity spectra. The description of various set-ups and accessories used in absorption spectroscopy is followed by a presentation of experimental results on specific impurities and classes of impurities and their relation with those obtained by various computation and by other experimental techniques.
Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Download or read book Semiconductor Physics written by Karl W. Böer and published by Springer Nature. This book was released on 2023-02-02 with total page 1408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
Download or read book Defects In Functional Materials written by Chi-chung Francis Ling and published by World Scientific. This book was released on 2020-08-21 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research of functional materials has attracted extensive attention in recent years, and its advancement nitrifies the developments of modern sciences and technologies like green sciences and energy, aerospace, medical and health, telecommunications, and information technology. The present book aims to summarize the research activities carried out in recent years devoting to the understanding of the physics and chemistry of how the defects play a role in the electrical, optical and magnetic properties and the applications of the different functional materials in the fields of magnetism, optoelectronic, and photovoltaic etc.
Download or read book Power Electronics Device Applications of Diamond Semiconductors written by Satoshi Koizumi and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance Examines why diamond semiconductors could lead to superior power electronics Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics
Download or read book Spectroscopic Analysis of Optoelectronic Semiconductors written by Juan Jimenez and published by Springer. This book was released on 2016-08-16 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.
Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Download or read book Characterization and Optimization of Dopants Impurities and Defects in Bulk Optical and Semiconductor Materials written by Muad Saleh and published by . This book was released on 2019 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects are what make most optical and semiconductor materials interesting, versatile in their behavior, and useable in different applications. Defects at the level of one atom in 106 to 109 atoms of the host material can have a significant influence on the electrical and optical properties, and depending on the identity of the defect and the site it is occupying, they can either enhance, degrade, or have no effect on the properties. Thus, it is crucial to characterize and understand the role of various dopants/defects on the properties and performance optical and semiconductor materials, and the defect/dopant formation, incorporation, and variation. This dissertation examines the influence of dopants and defects in ZnS, [beta]-Ga2O3 and Nd:YAG. Finally, the implementation of the accelerated crucible rotation technique (ACRT) is described to modify the Nd concentration profile in YAG grown by Czochralski (CZ). ZnS is a well-known scintillator used mainly in the powder forms; this study examines using bulk ZnS as a scintillator by modeling. The study also evaluates bulk ZnS single crystals by photoluminescence (PL), PL excitation, optical absorption, radioluminescence, and thermoluminescence and shows that samples show diverse luminescence behavior that can be attributed to the differences between samples' impurity concentrations. Study of the bulk ZnS by optical deep level transient spectroscopy (ODLTS), photoinduced current transient spectroscopy (PICTS), and photoconductivity shows the applicability of ODLTS/PICTS in studying ZnS, and show peculiar optically induced electrical behavior that is caused by a combination of point and extended defects. [beta]-Ga2O3 is an ultra-wide bandgap transparent semiconducting oxide of interest for high breakdown voltage electronics. This study evaluates parameters that affect the Czochralski (CZ) growth of [beta]-Ga2O3, and introduces two new shallow donors, Zr and Hf; these dopants show potentially superior electrical properties over other donors, such as Si and Sn, in [beta]-Ga2O3 and the ability to degenerately dope [beta]-Ga2O3. Finally, Nd:YAG is an important laser material that suffers from dopant segregation. In this study, we use ACRT to modify the Nd radial and vertical concentration profile during the CZ growth of Nd:YAG and enable enhanced incorporation of Nd, better homogeneity, and lower stresses.
Download or read book Optical Properties of Semiconducting Crystals written by Werner R. Rambauske and published by . This book was released on 1964 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extended program about optical properties of some selected semiconducting crystals under varied conditions of temperature, pressure, magnetic and electric fields, means of excitation, and influence of impurities is briefly summarized. (Author).
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Semiconducting III V Compounds written by C. Hilsum and published by Elsevier. This book was released on 2014-07-17 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide). Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, focusing on the properties of the zinc-blende structure as well as processes ranging from ionicity and infrared lattice absorption to electronegativity. The reader is then introduced to the band structure of III-V compounds and its theoretical aspects, along with cyclotron resonance and the diamagnetic Landau effect. Subsequent chapters discuss impurities and defects; optical and electrical properties; photoelectric effects; and preparation and applications of III-V compounds. This monograph will be of interest to physicists.
Download or read book Concise Encyclopedia of Semiconducting Materials Related Technologies written by S. Mahajan and published by Elsevier. This book was released on 2013-10-22 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
Download or read book Postdoctoral Research Associateships written by and published by . This book was released on 1981 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Download or read book Metals Abstracts Index written by and published by . This book was released on 1981 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book AB2C4 Semiconducting Compounds written by Mostefa Golea and published by . This book was released on 1988 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
