Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government wide Index to Federal Research Development Reports written by and published by . This book was released on 1966 with total page 1028 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1980 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nonlinear Optics in Semiconductors II written by and published by Academic Press. This book was released on 1998-11-09 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Download or read book Physical Review Physical Review Letters M Z written by Nichigai Asoshiētsu and published by . This book was released on 1974 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optics of Excitons in Confined Systems Proceedings of the INT Meeting Italy 24 27 September 1991 written by Andrea D'Andrea and published by CRC Press. This book was released on 1992-03-26 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optics of Excitons in Confined Systems provides an overview of research in semiconductors that exhibit resonance enhanced optical nonlinearities in the frequency range close to the valence-conduction band gap. The book is divided into the following sections: quantum wells, wires, and dots; superlattices; nonlinear optical properties of confined systems; and effects of external fields on confined systems. Topics range from fundamental theory to more applied aspects of excitons in confined sytems.
Download or read book Terahertz Technology written by Borwen You and published by BoD – Books on Demand. This book was released on 2022-08-17 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromagnetic waves within a terahertz frequency range are becoming critical to investigating molecules, materials, and possible applications that are operated by both visible light and infrared rays. This book discusses sensing, imaging, and optoelectronic technologies of terahertz electromagnetic waves in theory and experiments. Most terahertz technologies can be explained by fundamentals of applied physics that have been demonstrated in other spectral ranges. However, the optoelectronic technology and corresponding configurations of imaging and sensing techniques are so special for various terahertz material polarization waves, which are excited in solid-state media by high-peak power lasers and waveguide transportation. Thus, this book also specifies terahertz parameters and available technologies.
Download or read book Optical Characterization of Semiconductors written by D.B. Kushev and published by Trans Tech Publications Ltd. This book was released on 1992-01-01 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the Satellite Conference of the 20th International Conference on the Physics of Semiconductors, Sofia, Bulgaria, 1990
Download or read book Gaas And Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994-10-25 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Download or read book Semi Insulating III V Materials written by REES and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of deep levels in semiconductors has seen considerable growth in recent years. Many new techniques have become available for investigating both the electronic properties of deep levels and the chemical nature of the defects from which they arise. This increasing interest has been stimulated by the importance of the subject to device technology, in particular those microwave and opto-electronic devices made from GaAs, InP and their alloys. While previous conferences have covered specialist areas of deep level technology, the meeting described here was arranged to draw together workers from these separate fields of study. The following papers reflect the breadth of interests represented at the conference. For the sake of uniformity we have chosen the English alternative where an American expression has been used. We have also sought to improve grammar, sometimes without the approval of the author in the interests of rapid publication. The Editor wishes to thank the referees for their ready advice at all stages, Paul Jay who helped with many of the editorial duties and Muriel Howes and Lorraine Jones for rapid and accurate typing.
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Download or read book Gallium Arsenide and Related Compounds 1993 Proceedings of the 20th INT Symposium 29 August 2 September 1993 Freiburg im Braunschweig Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
