Download or read book The Electronic Theory of Heavily Doped Semiconductors written by Viktor Leopolʹdovich Bonch-Bruevich and published by . This book was released on 1966 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Properties of Doped Semiconductors written by B.I. Shklovskii and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Download or read book Heavily Doped Semiconductors written by V. I. Fistul and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.
Download or read book A Study of Band Edge Distortion in Heavily Doped Germanium written by Freeman D. Shepherd (Jr.) and published by . This book was released on 1965 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: Details of the energy band structure of degenerate n-type germanium were determined by analysis of fine structure in the 4.2K volt-ampere characteristic of germanium tunnel diodes. No shift in the relative energy of the conduction band minima was observed. The band edge is found to be exponentially distributed with 1/e energies of the order of 10 MeV. There appears to be an ordering mechanism among the group V impurity atoms used as substrate dopants. (Author).
Download or read book Physics of Semiconductor Devices written by Dilip K Roy and published by Universities Press. This book was released on 2004 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Conductors Semiconductors Superconductors written by Rudolf P. Huebener and published by Springer Nature. This book was released on 2019-11-16 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: This compact undergraduate textbook provides a concise yet thorough introduction to the fundamentals of solid-state physics, while also briefly discussing the historical context surrounding key scholars in the field. The vivid explanations and unique didactic approach adopted in the book aim to generate interest in these subjects while also serving as a motivating primer and supporting companion for studying more detailed and advanced textbooks in solid-state physics. The book is also suitable as a quick refresher for students preparing for examinations. The third edition features many extensions, including an up-to-date discussion of topological materials, a rapidly developing area at the forefront of solid-state physics. Primarily concentrating on the electric and magnetic properties of materials, the book will benefit undergraduate students in the fields of physics, materials science, and electrical engineering.
Download or read book Advances in Electronics and Electron Physics written by and published by Academic Press. This book was released on 1991-12-11 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Electronics and Electron Physics
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1993-08-10 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Download or read book Books and Pamphlets Including Serials and Contributions to Periodicals written by Library of Congress. Copyright Office and published by . This book was released on 1968 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Silicon Semiconducting Silicon Alloy Based Materials Devices written by Jo Nijs and published by CRC Press. This book was released on 2021-05-30 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Download or read book Catalogue of Title entries of Books and Other Articles Entered in the Office of the Librarian of Congress at Washington Under the Copyright Law Wherein the Copyright Has Been Completed by the Deposit of Two Copies in the Office written by Library of Congress. Copyright Office and published by . This book was released on 1969 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Continuum Theory and Modeling of Thermoelectric Elements written by Christophe Goupil and published by John Wiley & Sons. This book was released on 2016-02-23 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sound knowledge of the latest research results in the thermodynamics and design of thermoelectric devices, providing a solid foundation for thermoelectric element and module design in the technical development process and thus serving as an indispensable tool for any application development. The text is aimed mainly at the project developer in the field of thermoelectric technology, both in academia and industry, as well as at graduate and advanced undergraduate students. Some core sections address the specialist in the field of thermoelectric energy conversion, providing detailed discussion of key points with regard to optimization. The international team of authors with experience in thermoelectrics research represents such institutes as EnsiCaen Universite de Paris, JPL, CalTech, and the German Aerospace Center.
Download or read book Encyclopedic Dictionary of Condensed Matter Physics written by Charles P. Poole Jr. and published by Academic Press. This book was released on 2004-03-11 with total page 1658 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a translation and revision of the Original Russian version by Baryahktar. It covers all of the main fields involved in Condensed Matter Physics, such as crystallography, electrical properties, fluids, magnetism, material properties, optics, radiation, semiconductors, and superconductivity, as well as highlights of important related subjects such as quantum mechanics, spectroscopy, and statistical mechanics. Both theoretical and experimental aspects of condensed matter are covered in detail. The entries range from very short paragraphs on topics where definitions are needed, such as Bloch's law, clathrate compound, donor, domain, Kondo lattice, mean free path, and Wigner crystal, to long discussions of more general or more comprehensive topics such as antiferromagnetism, crystal lattice dynamics, dislocations, Fermi surface, Josephson effect, luminescence, magnetic films, phase transitions and semiconductors. The main theoretical approaches to Condensed Matter Physics are explained. There are several long tables on, for example, Bravais lattices, characteristics of magnetic materials, units of physical quantities, symmetry groups. The properties of the main elements of the periodic table are given. Numerous entries not covered by standard Solid State Physics texts o Self-similarity o The adiabatic approximation o Bistability Emphasis on materials not discussed in standard texts o Activated carborn o Austenite o Bainite o Calamitics o Carbine o Delat phase o Discotics o Gunier-Preston zones o Heterodesmic structures o Heusler Alloys o Stress and strain deviators o Vicalloy · Each entry is fully cross-referenced to help tracking down all aspects of a topic under investigation Highly illustrated to clarify many concepts
Download or read book Charge Transport in Disordered Solids with Applications in Electronics written by Sergei Baranovski and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: The field of charge conduction in disordered materials is a rapidly evolving area owing to current and potential applications of these materials in various electronic devices This text aims to cover conduction in disordered solids from fundamental physical principles and theories, through practical material development with an emphasis on applications in all areas of electronic materials. International group of contributors Presents basic physical concepts developed in this field in recent years in a uniform manner Brings up-to-date, in a one-stop source, a key evolving area in the field of electronic materials
Download or read book Quantum Effects Heavy Doping And The Effective Mass written by Kamakhya Prasad Ghatak and published by World Scientific. This book was released on 2016-12-08 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: The importance of the effective mass (EM) is already well known since the inception of solid-state physics and this first-of-its-kind monograph solely deals with the quantum effects in EM of heavily doped (HD) nanostructures. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, II-VI, IV-VI, and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of semiconductors in fundamental ways, which have also been incorporated in the study of EM in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under intense external fields has also been discussed in this context. The influences of magnetic quantization, crossed electric and quantizing fields, electric field and light waves on the EM in HD semiconductors and super-lattices are discussed.The content of this book finds twenty-eight different applications in the arena of nano-science and nano-technology. This book contains 200 open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers in the fields of condensed matter physics, materials science, solid state sciences, nano-science and technology and allied fields in addition to the graduate courses in semiconductor nanostructures. The book is written for post-graduate students, researchers, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience and technology and nanostructured materials in general.
Download or read book Heavily Doped 2D Quantized Structures and the Einstein Relation written by Kamakhya P. Ghatak and published by Springer. This book was released on 2014-07-30 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
Download or read book Catalog of Copyright Entries Third Series written by Library of Congress. Copyright Office and published by Copyright Office, Library of Congress. This book was released on 1968 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
