Download or read book On the Synthesis of SiC Single Crystals written by Yoshizō Inomata and published by . This book was released on 1972 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: A method is proposed to synthesize SiC single crystals free of carbon particle inclusions. An empty graphite crucible is connected with the crucible containing silicon melt by means of a graphite pipe. The former crucible is heated to approximately 2,500°C, as in the ordinary sublimation process, while the temperature of the latter is lowered. Crystal growth is accomplished in the empty crucible. The experiments conducted are preliminary. Problems such as damages to the crucible containing silicon melt, prevention of silicon leak, and control of the amount of silicon supply to the growth cavity are examined. The structure of the furnace necessary for the implementation of the method is discussed.
Download or read book Synthesis of Single Crystal Silicon Carbide Fibers written by Stephen M. Mullin and published by . This book was released on 1996 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
Download or read book Rector academiae lipsiensis solemnia sacrorum pentecostalium a d 19 maii a r s 1793 celebranda indicit Spicilegium XIX autographorum illustrantium rationem quae intercessit Erasmo Roterodamo cum aulis et hominibus aevi sui praecipuis written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide Nanostructures written by Jiyang Fan and published by Springer. This book was released on 2014-07-26 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals. SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications. Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.
Download or read book Silicon Carbide Nanostructures written by Ji-Yang Fan and published by . This book was released on 2014-08-31 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth Technology written by K. Byrappa and published by Springer Science & Business Media. This book was released on 2003-04-17 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
Download or read book Ceramic Materials written by C. Barry Carter and published by Springer Science & Business Media. This book was released on 2013-01-04 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ceramic Materials: Science and Engineering is an up-to-date treatment of ceramic science, engineering, and applications in a single, comprehensive text. Building on a foundation of crystal structures, phase equilibria, defects, and the mechanical properties of ceramic materials, students are shown how these materials are processed for a wide diversity of applications in today's society. Concepts such as how and why ions move, how ceramics interact with light and magnetic fields, and how they respond to temperature changes are discussed in the context of their applications. References to the art and history of ceramics are included throughout the text, and a chapter is devoted to ceramics as gemstones. This course-tested text now includes expanded chapters on the role of ceramics in industry and their impact on the environment as well as a chapter devoted to applications of ceramic materials in clean energy technologies. Also new are expanded sets of text-specific homework problems and other resources for instructors. The revised and updated Second Edition is further enhanced with color illustrations throughout the text.
Download or read book Synthesis Crystal Growth and Characterization written by K. Lal and published by Elsevier. This book was released on 2012-12-02 with total page 583 pages. Available in PDF, EPUB and Kindle. Book excerpt: Synthesis, Crystal Growth and Characterization presents the proceedings of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, held on October 12-23, 1981, at the National Physical Laboratory in New Delhi, India. The book consists of lectures by distinguished scientists from around the world who tackle different aspects of synthesis, crystal growth, characterization of materials, energy conversion, and energy storage. Organized into four parts encompassing 26 chapters, the book begins with an overview of the synthesis of materials at high temperatures and pressures before turning to a discussion of how macrocrystalline and amorphous silicon is prepared. It then looks at fundamental principles underlying the process of crystal growth, both from the vapor phase and from melt, and methodically introduces the reader to the different techniques used to characterize materials, including neutron scattering and electron transport. The next chapters focus on point defects and aggregates that influence the critical electronic properties of semiconducting materials, X-ray diffraction studies of strains and stresses in thin films used in solid-state devices, and electron spectroscopic studies of solid surfaces. The book also considers the role of physics in microelectronics and vice versa, fast ion transport in solids, and the concept of Syadvada in relation to modern physics. This volume is a valuable resource for participants of the International School on Synthesis, Crystal Growth and Characterization of Materials for Energy Conversion and Storage, as well as active researchers working in areas related to the field.
Download or read book Preparation of Single Crystals written by William Donald Lawson and published by . This book was released on 1958 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Single Crystal Epitaxy and Characterization of Beta Silicon Carbide written by Robert F. Davis and published by . This book was released on 1980 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project involves the development of low pressure chemical vapor deposition and r-f sputtering techniques for the synthesis of single crystal thin films of beta-SiC. The CVD apparatus is being produced in-house and a detailed description of the design is provided herein. Theoretical CVD phase diagrams of the Si-C-H system are also being produced as a function of Si/Si+C and total pressure. Both reactive sputtering of Si in CH4 and normal sputtering of a SiC target are being readied. (Author).
Download or read book Near Thermal Equilibrium Growth of 4H 6H and 15R silicon Carbide Single Crystals written by Norbert Schulze and published by . This book was released on 2001 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Carbon Particle Inclusions in SiC Single Crystals Prepared by Sublimation written by Yoshizō Inomata and published by . This book was released on 1971 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: Several experiments were performed to clarify the process of carbon particle inclusion in crystals grown by Lely's sublimation procedure. Special attention was paid to the effect of the cavity wall, recrystallization temperature, and the increasing heating rate. It was found, using the technique of dark field photomicrography, that the density of the inclusions in the crystals often showed certain orientation and zonal structure. These features are explained by the microscopic temperature distribution and temperature fluctuation in a crystal. From the relation between the observed results and growth conditions, it was concluded that the phenomenon is attributed primarily to the shifting of the vapor phase composition in the growth cavity to the carbon side from the equilibrium condition.
Download or read book Preparation and Characteristics of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis written by T. H. Geballe and published by . This book was released on 1981 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin layers of SiC were electrodeposited from Li2CO3/SiO2 melts onto alpha-SiC substrates at 1000 - 1050 C using potential differences around -0.5V versus polycrystalline SiC anodes. The layers appear to be expitaxial. Although conditions were found under which the melt exhibited good long term stability, attempts to grow bulk SiC crystals were handicapped by delamination of the seed crystals. Attempts to electrodeposit SiC from K2SiF6/Li2CO3/LiF/KF and SiO2/Na2CO3/NaBO2/LiF melts yielded botryoidal deposits containing excess carbon. (Author).
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book The Growth of SiC Crystals from Vapor by the Bridgman Stockbarger Method written by Juris Smiltens and published by . This book was released on 1974 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the dissociation curve (P vs. T), an equation for the rate of raising the pressure P of the binary vapor for obtaining the required linear growth rate of the crystal of c centimeters per hour is derived. It is shown that the rate is nearly proportional to P. Modifications of the furnace since the last report (Mat. Res. Bull. 4, S85, 1969) are described. Justification for the use of helium as the inert ambient gas is given. Two techniques are used: (1) growing with constant temperature of the crucible point and (2) growing with constant pressure of the sublimation bottle. To date, only polycrystalline boules consisting of large grains have been obtained. It is believed, however, that with certain technological improvements the methods that are developed here will ultimately yield single crystal boules. As a by-product, small cubic crystals, about one mm in the largest dimension, with good quality faces (cube and octahedron) have been obtained.
Download or read book Silicon Carbide Ceramics 1 written by S. Somiya and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovered by Edward G. Acheson about 1890, silicon carbide is one of the oldest materials and also a new material. It occurs naturally in meteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies. In 1974, S. Prochazka reported that the addition of small amounts of boron compounds and carbide were effective in the sintering process to obtain high density. It was then possible to produce high density sintered bodies by pressureless sintering methods in ordinary atmosphere. Since this development, silicon carbide has received great attention as one of the high temperature structural ceramic materials. Since the 1970s, many research papers have appeared which report studies of silicon carbide and silicon nitride for structural ceramics.
