Download or read book Nonstoichiometric GaAs based Semiconductors written by Hsi-Huai Wang and published by . This book was released on 1996 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Non Stoichiometric Layers of III IV Semiconductors written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this research project was the control of defect formation and thermal stability in non-stoichiometric GaAs thin layers. As rich GaAs offers unique device applications in layer isolation and optoelectronics because of its insulating capabilities after a thermal annealing and ultrafast time response in the THz range. The introduction of an optical temperature measurement, utilizing the diffuse reflectance spectroscopy enhanced the accuracy of the growth parameter determination, leading to a fairly reproducible growth. This enabled us to determine the limits of the low temperature growth, a saturation of the lattice dilation at low growth temperatures and/or high BEP ratios, and the onset of polycrystallinity and epitaxial columnar growth as is usually observed in the epitaxial growth of ceramics.
Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-10-12 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Download or read book Non stoichiometric Al GaAs as a Key Material for Ultrafast Electronics and Optics written by Stefan Dankowski and published by . This book was released on 1998 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion in GaAs and Other III V Semiconductors written by D. J. Fisher and published by Trans Tech Publication. This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.
Download or read book Chemistry of Semiconductors written by Sergio Pizzini and published by Royal Society of Chemistry. This book was released on 2023-12-24 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Center for Non Stoichiometric Semiconductors written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research under the PRET program has covered a varied range of materials and device applications. Early work was directed mostly toward understanding and implementing low-temperature grown (LTG) GaAs into field-effect transistors (FETs) providing increased breakdown voltages and a reduced noise performance. In recent years the research has been redirected into the newly emerging area of oxides and oxide electronics. Oxide produced from the steam oxidation of aluminum containing semiconductors has found widespread applications in the area of opto-electronics, specifically in vertical cavity lasers. In the research performed under the PRET program, additional applications in electronics, such as an insulating buffer in GaAs-On-Insulator (GOI) technology, as a lattice-engineered-substrate (LES), and most recently as a current aperture in high-speed heterojunction bipolar transistors (HBTs), have been implemented and studied. All of which have been shown, or potentially show, improved performances in devices, or introduced as yet unseen applications in material science.
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Download or read book Defect and Impurity Engineered Semiconductors and Devices written by and published by . This book was released on 1998 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Download or read book 2nd Symposium on Non Stoichiometric III V Compounds written by Tamas Marek and published by Lehrstuhl Fur Mikrocharakterisierung Friedrich Iversitat Erl. This book was released on 1999 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductors 1996 Proceedings of the Twenty Third INT Symposium on Compound Semiconductors held in St Petersburg Russia 23 27 September 1996 written by M.S. Shur and published by CRC Press. This book was released on 2020-10-28 with total page 1087 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Download or read book Ternary Alloys Based on III V Semiconductors written by Vasyl Tomashyk and published by CRC Press. This book was released on 2017-09-29 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. Because of their wide applications in a variety of devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. This new book covers all known information about phase relations in ternary systems based on III-V semiconductors. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists.
Download or read book Non stoichiometric Defects in III V Semiconductors written by Arti Prasad and published by . This book was released on 1996 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Experimental Study of Diffraction induced Effects on Single cycle Terahertz Pulses written by Alranzo B. Ruffin and published by . This book was released on 2001 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Compound Semiconductor Integrated Circuits written by Tho T Vu and published by World Scientific. This book was released on 2003-04-02 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
