Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Download or read book Library of Congress Subject Headings written by Library of Congress and published by . This book was released on 2013 with total page 1164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Library of Congress Subject Headings written by Library of Congress. Cataloging Policy and Support Office and published by . This book was released on 2009 with total page 1924 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reactor Dosimetry State Of The Art 2008 Proceedings Of The 13th International Symposium written by Wim Voorbraak and published by World Scientific. This book was released on 2009-08-19 with total page 761 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives the state of the art in the field of reactor dosimetry as applied in nuclear power plants and research reactors. Surveillance programs are presented for nuclear power plants in Europe, including Russia and Ukraine, USA, Argentina and Korea. New cross-section measurements from most of the European, American and Japanese research reactors are reported. The latest developments in computer code development for radiation transport and shielding calculations, and radiation measurement techniques are also highlighted.
Download or read book Library of Congress Subject Headings P Z written by Library of Congress. Subject Cataloging Division and published by . This book was released on 1989 with total page 1546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Library of Congress Subject Headings written by Library of Congress. Office for Subject Cataloging Policy and published by . This book was released on 1992 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Process Radiation Development Program Summaries written by and published by . This book was released on 1962 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Optoelectronic Materials written by Kazumi Wada and published by CRC Press. This book was released on 2001-11-06 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Download or read book Isotopes and Radiation Technology written by and published by . This book was released on 1964 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Energy written by Raymond L. Murray and published by Butterworth-Heinemann. This book was released on 2001 with total page 517 pages. Available in PDF, EPUB and Kindle. Book excerpt: Energy -- Atoms and nuclei -- Radioactivity -- Nuclear processes -- Radiation and materials -- Fission -- Fusion -- Particle accelerators -- Isotope separators -- Radiation detectors -- Neutron chain reactions -- Nuclear heat energy -- Breeder reactors -- Fusion reactors -- The history of nuclear energy -- Biological effects of radiation -- Information from isotopes -- Useful radiation effects -- Reactor safety -- Nuclear propulsion -- Radiation protection -- Radioactive waste disposal -- Laws, regulations, and organizations -- Energy economics -- International nuclear power -- Nuclear explosions -- The future.
Download or read book Nuclear Methods in Semiconductor Physics written by G. Langouche and published by Elsevier. This book was released on 1992-04-01 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.
Download or read book NBS Special Publication written by and published by . This book was released on 1965 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Processing written by Dinesh C. Gupta and published by ASTM International. This book was released on 1984 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt:
