Download or read book Native Oxides on Aluminum bearing III V Semiconductors with Applications to High Performance Laser Diodes written by Frederick Anthony Kish and published by . This book was released on 1992 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Native Oxides on Aluminum Bearing Iii V Semiconductors With Applications to High Performance Laser Diodes written by and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Oxidation of Aluminum Bearing III V Semiconductors with Applications to Quantum Well Heterostructure Lasers written by Steven Andrew Maranowski and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the present work, a water vapor oxidation process is used to convert high Al-composition $rm Alsb{x}Gasb{1-x}As and Insb{0.5}(Alsb{x}Gasb{1-x})sb{0.5}P$ to stable, device-quality native oxides. The insulating and low-refractive-index properties of the native oxide prove useful in the fabrication of quantum well heterostructure laser diodes. The rate of oxide formation is sensitive to oxidation temperature and time, crystal doping, and, most dramatically the aluminum composition of the oxidizing layer. The higher aluminum composition semiconductors oxidize more readily. Selective oxidation of quantum well heterostructure crystals is used to convert only the highest aluminum composition materials to the native oxide. In the layered heterostructures commonly used in today's optoelectronic devices, selective oxidation is a unique way to "bury" an insulating and low-refractive-index oxide both above and below semiconductor layers used in a device. This makes possible, as described here, an edge-emitting laser diode that is confined both optically and electrically by "buried" oxide layers above and below the active region. Selective oxidation of $rm Alsb{x}Gasb{1-x}As$ occurs at low enough temperatures $(400spcirc$C-500$spcirc$C) to be performed on a fully metallized laser diode without adversely affecting its electrical performance. Metallized laser diodes are oxidized from their exposed facets, resulting in edge-emitting devices with current-blocking window regions at the mirrors. The buried oxide "spike," which extends from the facet into the crystal, forms selectively in a region of high aluminum composition. The buried oxide removes the current injection from the facet region, protects the facet, and results in improved maximum output powers from the lasers. Finally, the ability to form low-index $rm(nsim1.55)$ layers of oxide between high-index semiconductor crystals facilitates the formation of high-index-contrast distributed Bragg reflecting (DBR) mirrors. The properties of these mirrors and their applications to vertical cavity surface emitting lasers and edge-emitting lasers are described.

Download or read book Native Oxides on Aluminum bearing III V Semiconductors written by Alan Richard Sugg and published by . This book was released on 1993 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Native Oxides on Aluminum bearing III V Semiconductors with Applications to Single mode Behavior Bistability and Switching written by Nada Abdullatif El-Zein and published by . This book was released on 1995 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$spcirc$C to 450$spcirc$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction. Device-quality insulating oxides are demonstrated in the $rm Alsb{x}Gasb{1-x}$As-GaAs and $rm Alsb{y}Gasb{1-y}$As-GaAs-$rm Insb{x}Gasb{1-x}As$ systems and are employed for current confinement in stripe-geometry gain guided laser diodes. The insulating properties and low refractive index (n $sim$ 1.6) of AlGaAs native oxide are employed to fabricate single-longitudinal-mode planar native-oxide AlGaAs-GaAs quantum well heterostructure (QWH) laser diodes. This is done by patterning the stripes into a linear array. Data are also presented on the use of the native oxide to obtain switching and bistability with large hysteresis when fabricating laser diodes. Three-terminal bistable devices are examined. Finally, data are presented on the wavelength selectivity of the native oxide bistable devices.

Download or read book Native Oxidation of Aluminum bearing III V Semiconductors with Applications to Edge and Surface emitting Lasers and to the Stabilization of Light Emitting Diodes written by Timothy Allen Richard and published by . This book was released on 1995 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, a water vapor oxidation process is used to convert high Al composition $rm Alsb{x}Gasb{1-x}As$ to a stable native oxide. The native oxides described are formed at temperatures in the range of 400$rmspcirc C$ to 500$rmspcirc C.$ Some of the basic properties of the native oxide are described. These properties include the insulating and diffusion masking nature of the oxide as well as the anisotropic behavior of the oxidation process. The high quality native oxide is then applied to laser devices in the $rm Alsb{x}Gasb{1-x}$As-GaAs and $rm Alsb{y}Gasb{1 -y}$As-GaAs-In$rmsb{x}Gasb{1-x}As$ material systems and to the stabilization of $rm Alsb{y}Gasb{1-y}As$-$rm Insb{0.5}(Alsb{x}Gasb{1-x})sb{0.5}P$ light emitting diodes. Data are presented on a high-performance native-oxide coupled-stripe $rm Alsb{y}Gasb{1-y}As$-GaAs-In$rmsb{x}Gasb{1-x}As$ quantum well heterostructure laser array realized by the "wet" oxidation of the upper $rm Alsb{y}Gasb{1-y}As$ confining layer for current definition. Also, data are presented on the (300 K and 77 K) continuous photopumped laser operation of oxide-embedded $rm Alsb{y}Gasb{1-y}As$-GaAs-In$rmsb{x}Gasb{1-x}As$ quantum-well heterostructures. The active region is sandwiched within native-oxide-semiconductor stacks. The native-oxide layers are formed after crystal growth by selectively oxidizing along high Al-composition heterolayers. The active region is shown to remain intact without any significant degradation in laser performance. The oxide-embedded laser structure is optimized for vertical-cavity laser operation utilizing large-index-step high-contrast distributed Bragg reflector mirrors formed by the selective lateral oxidation process. Edge- and vertical-cavity photopumped operations of devices with short period upper and lower mirrors are demonstrated. The vertical-cavity lasers also exhibit "hot"-carrier recombination. Finally, data are presented on the electrical behavior and the reliabillty of post-fabrication native-oxide-passivated visible-spectrum AlGaAs-In(AlGa)P p-n heterostructure light emitting diodes (LEDs). The LEDs are oxidized after metallization, thus sealing all of the exposed AlGaAs crystal at cracks, fissures, and edges against atmospheric hydrolysis without degrading their light-output characteristics. The current-voltage (I-V) characteristics of the oxide-passivated LEDs are shown to exhibit normal p-n diode behavior. Above all, the reliability of the oxidized devices in high-humidity conditions is greatly improved compared to those of otherwise identical unoxidized LEDs.

Download or read book Use of Aluminum Bearing III V Semiconductor Native Oxides for Optical and Current Confinement in Waveguides and Lasers written by Stephen Joseph Caracci and published by . This book was released on 1993 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: Data are presented on various laser and optical devices that utilize native oxidation of Al bearing III-V semiconductors to effect large lateral index steps. These large index steps are due to the low refractive index of the Al bearing native oxide (n $sim$ 1.5), making possible the fabrication of high-quality optical waveguides. To process epitaxial III-V crystals at higher resolution (e.g., laser devices with small output apertures and lower threshold currents), it is often desirable to shrink the thickness of the upper confining layer (UCL). The effect of thin upper confining layers on laser performance is studied by reducing the thickness to 0.2, 0.3, 0.45, and 0.6 $mu$m. Data presented show that device performance is not significantly degraded until the UCL thickness is reduced $sim$0.2 $mu$m. Planar native-oxide index-guided lasers with high-performance operation are described. These lasers use a relatively thick native oxide to form a lateral waveguide with an effective index step of $rmDelta n sim 5times10sp{-3}.$ Index-guided devices, as opposed to gain-guided devices, exhibit improved output beam quality, lower threshold current, and narrower spectra. With even larger lateral index steps it is possible to "steer" photons. To investigate very large index steps formed from native oxides, three types of devices are used: planar native-oxide defined waveguides, "teardrop"-shaped lasers and ring lasers. Data presented on native-oxide defined S-bend waveguides indicate extremely low optical losses are achieved even for "tight" bending. Further data on half- and full-ring lasers demonstrate that the radiation losses due to bending are low enough to still have high output power and low threshold current laser operation. It is even possible to select the polarization of the emitted light due to asymmetric losses for TE and TM light. This is accomplished by using a "teardrop"-shaped resonator consisting of a single output stub which is split into a y-section that is then closed with a half ring. Laser devices using this geometry exhibit TM polarized output light with low threshold currents and high output powers.

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1992 with total page 796 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Oxidation of Aluminum bearing III V Semiconductors with Application to Quantum Well Heterostructure Lasers written by Steven Andrew Maranowski and published by . This book was released on 1995 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Oxidation of Aluminum bearing III V Semiconductors written by Eugene I-Chun Chen and published by . This book was released on 1996 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$sb{rm x}$Ga$sb{rm 1-x}$As (x $sbsp{sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($sbsp{sim}{>}400 spcirc$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches. Native oxide-based AlGaAs-GaAs metal-oxide-semiconductor field-effect transistor devices are fabricated via lateral oxidation of a thin AlAs layer. Data are presented demonstrating depletion-mode transistor operation. This shows that the native oxide is of sufficient quality to allow modulation of an underlying GaAs channel. Impurity-induced layer disordering (IILD) and water vapor oxidation are also used to define a planar minidisk cavity in a superlattice (70 A AlAs + 30 A GaAs) crystal. Data are presented showing photopumped "whispering gallery mode" laser operation of $sim$37 $mu$m minidisks lasers. Finally, the IILD and oxidation process is extended to the formation of a microdisk photonic lattice. Data are presented showing that the microdisks ($sim$9 $mu$m diameter) are sufficiently coupled to form "bands" in the photopumped recombination radiation spectra.

Download or read book New Applications of III V Compound Semiconductor Native Oxides for Photonic Devices written by Yuan Tian and published by . This book was released on 2019 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1997 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Native Oxidation of Selectively Disordered Aluminum Gallium Arsenide Quantum Well Heterostructures Deep Oxide Structures for High Performance Lasers and Waveguides written by Michael Ragan Krames and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Data are presented showing that "deep," device-quality native oxide structures can be formed in selected areas in $rm Alsb{x}Gasb{1-x}$As-GaAs quantum well heterostructure (QWH) crystals. The deep oxides are formed using a combination of improved area-selective impurity-induced layer disordering (IILD) and water vapor oxidation at an elevated temperature (525$spcirc$C). The resulting oxide extends from the QWH crystal surface into the lower confining layers, penetrating the active region and forming a deep, insulating, low-refractive-index structure with a smooth interface that is free of defects and dislocations. Data are presented on devices utilizing the large lateral index step provided by the deep oxide, including high performance AlGaAs-GaAs QWH stripe-geometry laser diodes, waveguides with low bend loss, and low-threshold curved-geometry lasers. These devices display tight routing capability and suggest compact, integrable geometries for reducing the real-estate requirements (and the cost) of the optoelectronic integrated circuits and for offering less constraint in circuit design.

Download or read book CRC Handbook of Metal Etchants written by Perrin Walker and published by CRC Press. This book was released on 1990-12-11 with total page 1434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Critical Mineral Resources of the United States written by K. J. Schulz and published by Geological Survey. This book was released on 2017 with total page 868 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the importance and dependence of specific mineral commodities increase, so does concern about their supply. The United States is currently 100 percent reliant on foreign sources for 20 mineral commodities and imports the majority of its supply of more than 50 mineral commodities. Mineral commodities that have important uses and face potential supply disruption are critical to American economic and national security. However, a mineral commodity's importance and the nature of its supply chain can change with time; a mineral commodity that may not have been considered critical 25 years ago may be critical today, and one considered critical today may not be so in the future. The U.S. Geological Survey has produced this volume to describe a select group of mineral commodities currently critical to our economy and security. For each mineral commodity covered, the authors provide a comprehensive look at (1) the commodity's use; (2) the geology and global distribution of the mineral deposit types that account for the present and possible future supply of the commodity; (3) the current status of production, reserves, and resources in the United States and globally; and (4) environmental considerations related to the commodity's production from different types of mineral deposits. The volume describes U.S. critical mineral resources in a global context, for no country can be self-sufficient for all its mineral commodity needs, and the United States will always rely on global mineral commodity supply chains. This volume provides the scientific understanding of critical mineral resources required for informed decisionmaking by those responsible for ensuring that the United States has a secure and sustainable supply of mineral commodities.