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EBookClubs

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Book Physical basis of Monte Carlo simulations of ion implantion damage in silicon

Download or read book Physical basis of Monte Carlo simulations of ion implantion damage in silicon written by Shiyang Tian and published by . This book was released on 1994 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Simulation of Semiconductor Devices and Processes

Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer. This book was released on 1993 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modeling of Ion Implantation and Diffusion in Si

Download or read book Modeling of Ion Implantation and Diffusion in Si written by and published by . This book was released on 1996 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: Classical molecular dynamics simulations are used to study damage produced during implantation of semiconductors with different ion masses and energies between 1-25 keV. The time scale for these simulations is only on the order of ns, and therefore problems like transient enhanced diffusion of dopants or formation of extended defects can not be studied with these models. Monte Carlo simulations, including as input the results obtained from molecular dynamics calculations, are used to extend the simulation time, and in particular, to study processes like ion implantation and defects diffusion in semiconductors. As an example, we show results for diffusion of the damage produced by implantation of Si with 5 keV Xe ions at low doses. Results of the simulations are compared with experiments in order to validate the model.

Book Ion Implantation Technology 92

Download or read book Ion Implantation Technology 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.

Book Ion Implantation and Activation

Download or read book Ion Implantation and Activation written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2013-11-05 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.

Book Integrated Circuit Fabrication

Download or read book Integrated Circuit Fabrication written by James D. Plummer and published by Cambridge University Press. This book was released on 2023-10-31 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Master fundamental technologies for modern semiconductor integrated circuits with this definitive textbook, for students from a range of STEM backgrounds, with a focus on big-picture thinking and industry-grade simulation. Includes over 450 full-color figures and over 280 homework problems, with solutions and lecture slides for instructors.

Book Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon

Download or read book Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon written by and published by . This book was released on 1995 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after 10ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800°C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

Book Toward a Predictive Atomistic Model of Ion Implantation and Dopant Diffusion in Silicon

Download or read book Toward a Predictive Atomistic Model of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.

Book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology

Download or read book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology written by C. S. Murthy and published by The Electrochemical Society. This book was released on 1999 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Simulation of Semiconductor Devices and Processes

Download or read book Simulation of Semiconductor Devices and Processes written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Book Ion Implantation Science and Technology

Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.