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Book Simulation of Semiconductor Devices and Processes

Download or read book Simulation of Semiconductor Devices and Processes written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Book 3 Dimensional Process Simulation

Download or read book 3 Dimensional Process Simulation written by J. Lorenz and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.

Book An Accurate and Computationally efficient Model for Boron Implants Through an Overlying Oxide Layer Into Single crystal 100 Silicon

Download or read book An Accurate and Computationally efficient Model for Boron Implants Through an Overlying Oxide Layer Into Single crystal 100 Silicon written by Hsuan-Yu Lim and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many of the current implant applications in integrated circuits, a thin overlying amorphous oxide layer is often used to reduce the depth of dopant profiles by reducing the amount of channeling. The oxide layer is believed to randomly scatter a well-collimated (≤ 0.5° divergence) ion beam into a cone-shape angular distribution prior to its entry into the underlying single-crystal silicon. In this manner, most of the ions are scattered away from major axial and planar channels. A computationally-efficient 1-D model for boron implantation into single-crystal silicon through a screen oxide layer was developed. This model is of great interest and importance to the semiconductor industry for understanding process control issues in manufacturing and for guiding technology development. In developing this model, approximately 400 SIMS experimental profiles were obtained. In addition, the UT-MARLOWE Monte Carlo ion implant code was improved to generate boron profiles for part of the implant parameter space. It has been observed that boron implanted profiles are significantly dependent on the implant dose, energy, oxide layer thickness, tilt angle and rotation angle. A curve-fitting software program that uses the Dual Pearson Distribution function was used to extract the nine parameter values which define each profile. The parameters extracted for each profile are arranged into a lookup table where each set of nine parameter values corresponds to the profile for a particular combination of implant dose, energy, tilt angle, rotation angle and oxide thickness. Linear interpolation functions are employed to generate profiles for which there are no explicit set of parameters. This computationally-efficient model is able to generate as-implanted profiles of boron implantation through thin overlying oxides ranging from bare silicon (with a native oxide of approximately I.6nm) to 40nm, implant energies ranging from 15keV to 80keV, doses up to 1x1016cm−2, tilt angles ranging from 0°-10°, and rotation angles ranging from 0°-360°. This model is being implemented into SUPREM III, a widely used process simulation program used in the semiconductor industry in order to demonstrate the model. In this manner, the model will allow users to generate, in a highly computationally-efficient manner, accurate 1-D boron profiles as a function of implant dose, energy, oxide thickness, tilt angle and rotation angle

Book Modeling of BF2 ion implantation into single crystal silicon

Download or read book Modeling of BF2 ion implantation into single crystal silicon written by Puneet Gupta and published by . This book was released on 1992 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Ion Implantation and Activation

Download or read book Ion Implantation and Activation written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2013-10-08 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.

Book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology

Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Handbook of Semiconductor Manufacturing Technology

Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2000-08-09 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Semiconductor Manufacturing Technology describes the individual processes and manufacturing control, support, and infrastructure technologies of silicon-based integrated-circuit manufacturing, many of which are also applicable for building devices on other semiconductor substrates. Discussing ion implantation, rapid thermal processing, photomask fabrication, chip testing, and plasma etching, the editors explore current and anticipated equipment, devices, materials, and practices of silicon-based manufacturing. The book includes a foreword by Jack S. Kilby, cowinner of the Nobel Prize in Physics 2000 "for his part in the invention of the integrated circuit."

Book An accurate and computationally efficient model for low energy boron BF2 and arsenic ion implantation into 100 single crystal silicon

Download or read book An accurate and computationally efficient model for low energy boron BF2 and arsenic ion implantation into 100 single crystal silicon written by Krishnakumar Bhagwan Parab and published by . This book was released on 1996 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Introduction to Microfabrication

Download or read book Introduction to Microfabrication written by Sami Franssila and published by John Wiley & Sons. This book was released on 2005-01-28 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microfabrication is the key technology behind integrated circuits,microsensors, photonic crystals, ink jet printers, solar cells andflat panel displays. Microsystems can be complex, but the basicmicrostructures and processes of microfabrication are fairlysimple. Introduction to Microfabrication shows how the commonmicrofabrication concepts can be applied over and over again tocreate devices with a wide variety of structures andfunctions. Featuring: * A comprehensive presentation of basic fabrication processes * An emphasis on materials and microstructures, rather than devicephysics * In-depth discussion on process integration showing how processes,materials and devices interact * A wealth of examples of both conceptual and real devices Introduction to Microfabrication includes 250 homework problems forstudents to familiarise themselves with micro-scale materials,dimensions, measurements, costs and scaling trends. Both researchand manufacturing topics are covered, with an emphasis on silicon,which is the workhorse of microfabrication. This book will serve as an excellent first text for electricalengineers, chemists, physicists and materials scientists who wishto learn about microstructures and microfabrication techniques,whether in MEMS, microelectronics or emerging applications.

Book Ion Implantation Technology 92

Download or read book Ion Implantation Technology 92 written by D.F. Downey and published by Elsevier. This book was released on 2012-12-02 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation technology has made a major contribution to the dramatic advances in integrated circuit technology since the early 1970's. The ever-present need for accurate models in ion implanted species will become absolutely vital in the future due to shrinking feature sizes. Successful wide application of ion implantation, as well as exploitation of newly identified opportunities, will require the development of comprehensive implant models. The 141 papers (including 24 invited papers) in this volume address the most recent developments in this field. New structures and possible approaches are described. The implications for ion implantation technology as well as additional observations of needs and opportunities are discussed. The volume will be of value to all those who are interested in acquiring a more complete understanding of the current developments in ion implantation processes and comprehensive implant models.

Book Ion Implantation Technology 94

Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.

Book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology

Download or read book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology written by C. S. Murthy and published by The Electrochemical Society. This book was released on 1999 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: