Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Download or read book Bismuth Containing Alloys and Nanostructures written by Shumin Wang and published by Springer. This book was released on 2019-07-03 with total page 403 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials. It provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings. Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years. The book is intended as a reference resource and textbook for graduate students and researchers working in these fields.

Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: - This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Download or read book Bismuth Containing Compounds written by Handong Li and published by Springer Science & Business Media. This book was released on 2013-10-10 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serves as a platform for knowledge sharing and dissemination of the latest advances in novel areas of bismuth-containing compounds for materials and devices, and provides a comprehensive introduction to those new to this growing field. Coverage of bismides includes theoretical considerations, epitaxial growth, characterization, and materials properties (optical, electrical, and structural). In addition to the well-studied area of highly mismatched Bi-alloys, the book covers emerging topics such as topological insulators and ferroelectric materials. Built upon fundamental science, the book is intended to stimulate interest in developing new classes of semiconductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices.

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Download or read book Novel Compound Semiconductor Nanowires written by Fumitaro Ishikawa and published by CRC Press. This book was released on 2017-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Terahertz THz Mid Infrared MIR and Near Infrared NIR Technologies for Protection of Critical Infrastructures Against Explosives and CBRN written by Mauro Fernandes Pereira and published by Springer Nature. This book was released on 2021-04-30 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Critical infrastructures are targets for terrorism and deliver a valuable vector through which the proliferation of CBRN and explosive precursors can be detected. Recent technological breakthroughs, notably in the field of near infrared (NIR), mid infrared (MIR), Terahertz (THz) and Gigahertz (GHz) sources and detectors, have led to rugged commercial devices, capable of standoff sensing a range of these dangerous substances. However, at the same time criminal and terrorist organizations have also benefited from the availability of technologies to increase the threat they pose to the security of citizens and a concerted effort is needed to improve early detection measures to identify activities, such as the production of homemade explosives or CBRN that can be potentially dangerous to society. The key global technological bottleneck to be overcome is the current lack of integration and networking of mature detection technology into early warning systems for critical infrastructures. Thus, this book brings together complementary information connecting the research of leading teams working on critical Infrastructure protection with academic developers and industrial producers of state of the art sensors.

Download or read book Excitonic and Photonic Processes in Materials written by Jai Singh and published by Springer. This book was released on 2016-08-23 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is expected to present state-of-the-art understanding of a selection of excitonic and photonic processes in useful materials from semiconductors to insulators to metal/insulator nanocomposites, both inorganic and organic. Among the featured applications are components of solar cells, detectors, light-emitting devices, scintillators and materials with novel optical properties. Excitonic properties are particularly important in organic photovoltaics and light emitting devices, as also in questions of the ultimate resolution and efficiency of new-generation scintillators for medical diagnostics, border security and nuclear non proliferation. Novel photonic and optoelectronic applications benefit from new material combinations and structures to be discussed.

Download or read book X ray Scattering written by Alicia Esther Ares and published by BoD – Books on Demand. This book was released on 2017-01-25 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: X-ray scattering techniques are a family of nondestructive analytical techniques. Using these techniques, scientists obtain information about the crystal structure and chemical and physical properties of materials. Nowadays, different techniques are based on observing the scattered intensity of an X-ray beam hitting a sample as a function of incident and scattered angle, polarization, and wavelength. This book is intended to give overviews of the relevant X-ray scattering techniques, particularly about inelastic X-ray scattering, elastic scattering, grazing-incidence small-angle X-ray scattering, small-angle X-ray scattering, and high-resolution X-ray diffraction, and, finally, applications of X-ray spectroscopy to study different biological systems.

Download or read book Surface Microscopy with Low Energy Electrons written by Ernst Bauer and published by Springer. This book was released on 2014-07-10 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, written by a pioneer in surface physics and thin film research and the inventor of Low Energy Electron Microscopy (LEEM), Spin-Polarized Low Energy Electron Microscopy (SPLEEM) and Spectroscopic Photo Emission and Low Energy Electron Microscopy (SPELEEM), covers these and other techniques for the imaging of surfaces with low energy (slow) electrons. These techniques also include Photoemission Electron Microscopy (PEEM), X-ray Photoemission Electron Microscopy (XPEEM), and their combination with microdiffraction and microspectroscopy, all of which use cathode lenses and slow electrons. Of particular interest are the fundamentals and applications of LEEM, PEEM, and XPEEM because of their widespread use. Numerous illustrations illuminate the fundamental aspects of the electron optics, the experimental setup, and particularly the application results with these instruments. Surface Microscopy with Low Energy Electrons will give the reader a unified picture of the imaging, diffraction, and spectroscopy methods that are possible using low energy electron microscopes.

Download or read book X Ray Absorption Spectroscopy of Semiconductors written by Claudia S. Schnohr and published by Springer. This book was released on 2014-11-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.

Download or read book High Brightness Light Emitting Diodes written by and published by Academic Press. This book was released on 1998-02-09 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Download or read book Spontaneous Ordering in Semiconductor Alloys written by Angelo Mascarenhas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.