EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book ZnO Thin Films

Download or read book ZnO Thin Films written by Paolo Mele and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.

Book Government Reports Announcements   Index

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1994-03 with total page 1414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Decisions of the Commissioner of Patents

Download or read book Decisions of the Commissioner of Patents written by and published by . This book was released on 1871 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Challenge of Change

    Book Details:
  • Author : Rebecca Hampl
  • Publisher : Christian Faith Publishing, Inc.
  • Release : 2022-08-01
  • ISBN : 1098051017
  • Pages : 533 pages

Download or read book The Challenge of Change written by Rebecca Hampl and published by Christian Faith Publishing, Inc.. This book was released on 2022-08-01 with total page 533 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the age of twenty-eight, Marty Ellis is still a bachelor who graduated with a major in journalism and a minor in photojournalism. He enjoys his life with various girlfriends while knocking back drinks in bars, going out to dinner, and rolling in the sheets. Yet inevitably, he grows tired of these surface-level-only feelings, shells out his standard goodbye speech, and moves on. However, using only his body and saying sayonara to his love lifeaEUR(tm)s revolving door is not how he wants to live for the rest of his life. How will he ever know what true love feels like if he doesnaEUR(tm)t ascertain how to actually give it? In what way will he begin to be able to discover the whole package that runs beneath the surface of a woman? Unexpectedly, Marty is blindsided when his best friend invites him to leave New Jersey for a weekend trip. Lauren Morris is a beautiful thirty-two-year-old woman who, after graduating at the age of twenty-one with a masteraEUR(tm)s degree in business, took a huge leap of faith and purchased an old farmhouse in Vermont. After ten years of hard work and sweat equity, she has transformed it into a beautiful inn that has become extremely lucrative. But winter is fast approaching, and she is dreading that feeling of loneliness that is connected to darkened afternoons and long, empty nights. Will a man ever enter her life? One that she could love and perhaps be with until death due them part? After meeting Marty, Lauren begins to consider if this man might be the one she has been waiting for her whole life. But then again, she is older than he is; long distance relationships hardly ever work out; and sudden heartbreaking unforeseen events rock both of their worlds. And if they do fall in love, which one of them will have to make the ultimate sacrifice and give up what theyaEUR(tm)ve worked so hard to achieve in order to be together? With so many changes causing so many challenges, will they get through them together, or will one push the other away?

Book Handbook of Aerospace Electromagnetic Compatibility

Download or read book Handbook of Aerospace Electromagnetic Compatibility written by Dr. Reinaldo J. Perez and published by John Wiley & Sons. This book was released on 2018-11-30 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive resource that explores electromagnetic compatibility (EMC) for aerospace systems Handbook of Aerospace Electromagnetic Compatibility is a groundbreaking book on EMC for aerospace systems that addresses both aircraft and space vehicles. With contributions from an international panel of aerospace EMC experts, this important text deals with the testing of spacecraft components and subsystems, analysis of crosstalk and field coupling, aircraft communication systems, and much more. The text also includes information on lightning effects and testing, as well as guidance on design principles and techniques for lightning protection. The book offers an introduction to E3 models and techniques in aerospace systems and explores EMP effects on and technology for aerospace systems. Filled with the most up-to-date information, illustrative examples, descriptive figures, and helpful scenarios, Handbook of Aerospace Electromagnetic Compatibility is designed to be a practical information source. This vital guide to electromagnetic compatibility: • Provides information on a range of topics including grounding, coupling, test procedures, standards, and requirements • Offers discussions on standards for aerospace applications • Addresses aerospace EMC through the use of testing and theoretical approaches Written for EMC engineers and practitioners, Handbook of Aerospace Electromagnetic Compatibility is a critical text for understanding EMC for aerospace systems.

Book International Humanitarian Law and Terrorism

Download or read book International Humanitarian Law and Terrorism written by Andrea Bianchi and published by Hart Publishing. This book was released on 2011-07-01 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book carefully and thoroughly analyses the legal questions raised by the phenomenon of terrorism, and past and recent efforts to fight it, from the perspective of international humanitarian law (IHL). The objective is to substantially contribute to a better understanding of the issues surrounding the content and applicability of IHL as it applies to terrorism as well as to analyse and contextualise the current debates on these controversial and critically important questions. While due heed is paid to doctrinal debates, particular emphasis is placed on the practice of social actors, particularly, although not exclusively, States. The analysis of their actual conduct as well as their expectations about the interpretation and application of the law is crucial to establishing an interpretive consensus on when and how IHL is relevant to regulate acts of terrorism. The approach of the book is analytical and discursive, rather than prescriptive. Thus the reader will find the relevant rules of IHL and other legal regimes as regards terrorism, but also the debates over their application, the contradictions in State practice and the impact these may have upon IHL's evolution and implementation. The aim is to provide legal practitioners, as well as those in military, political and academic circles, with a useful reference point. Hopefully the book will also prove useful to other readers who will find its content and easy-to-read style an encouragement to getting acquainted with a topical subject, traditionally thought to be reserved for legal specialists. This book was cited with approval by the US Court of Appeals in Salim Ahmed Hamdan v United States of America, 16th October 2012

Book Cosmology of the Early Universe

Download or read book Cosmology of the Early Universe written by Lizhi Fang and published by . This book was released on 1984 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Manual of Forensic Quotations

Download or read book Manual of Forensic Quotations written by Leon Mead and published by . This book was released on 1903 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Model Family Code

Download or read book Model Family Code written by Ingeborg H. Schwenzer and published by . This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Model Family Code aims at contributing to future discussion on the harmonization, and hopefully even unification of family law. The Model Family Code has attempted to address all aspects of Partnerships and of Parents and Children, which constitute the core areas of any family law. It is elaborated from a global, rather than a European perspective

Book MOSFET Modeling for Circuit Analysis and Design

Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Book Operation and Modeling of the MOS Transistor

Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by McGraw-Hill Science, Engineering & Mathematics. This book was released on 1987 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Matching Properties of Deep Sub Micron MOS Transistors

Download or read book Matching Properties of Deep Sub Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2006-06-20 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Book High Energy Astrophysics

    Book Details:
  • Author : Thierry J.-L. Courvoisier
  • Publisher : Springer Science & Business Media
  • Release : 2012-10-02
  • ISBN : 3642309704
  • Pages : 333 pages

Download or read book High Energy Astrophysics written by Thierry J.-L. Courvoisier and published by Springer Science & Business Media. This book was released on 2012-10-02 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-energy astrophysics has unveiled a Universe very different from that only known from optical observations. It has revealed many types of objects in which typical variability timescales are as short as years, months, days, and hours (in quasars, X-ray binaries, etc), and even down to milli-seconds in gamma ray bursts. The sources of energy that are encountered are only very seldom nuclear fusion, and most of the time gravitation, a paradox when one thinks that gravitation is, by many orders of magnitude, the weakest of the fundamental interactions. The understanding of these objects' physical conditions and the processes revealed by high-energy astrophysics in the last decades is nowadays part of astrophysicists' culture, even of those active in other domains of astronomy. This book evolved from lectures given to master and PhD students at the University of Geneva since the early 1990s. It aims at providing astronomers and physicists intending to be active in high-energy astrophysics a broad basis on which they should be able to build the more specific knowledge they will need. While in the first part of the book the physical processes are described and derived in detail, the second part studies astrophysical objects in which high-energy astrophysics processes are crucial. This two-pronged approach will help students recognise physical processes by their observational signatures in contexts that may differ widely from those presented here.

Book Charge Based MOS Transistor Modeling

Download or read book Charge Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Book Mosfet Modeling for VLSI Simulation

Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific Publishing Company Incorporated. This book was released on 2007 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology.

Book The Spoken Language Translator

Download or read book The Spoken Language Translator written by Manny Rayner and published by Cambridge University Press. This book was released on 2000-08-28 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the Spoken Language Translator (SLT), one of the first major projects in the area of automatic speech translation.

Book MOSFET Models for VLSI Circuit Simulation

Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain Arora and published by Springer. This book was released on 1993 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.