Download or read book Modeling of BF2 ion implantation into single crystal silicon written by Puneet Gupta and published by . This book was released on 1992 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An accurate and computationally efficient model for low energy boron BF2 and arsenic ion implantation into 100 single crystal silicon written by Krishnakumar Bhagwan Parab and published by . This book was released on 1996 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Monte Carlo simulation of boron ion implantation into single crystal silicon written by Kevin Michael Klein and published by . This book was released on 1991 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book Ion Beam Processing of Materials and Deposition Processes of Protective Coatings written by P.L.F. Hemment and published by Newnes. This book was released on 2012-12-02 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.
Download or read book Masters Theses in the Pure and Applied Sciences written by Wade H. Shafer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the though that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemi nation. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 37 (thesis year 1992) a total of 12,549 thesis titles from 25 Canadian and 153 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 37 reports theses submitted in 1992, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
Download or read book Nuclear Instruments Methods in Physics Research written by and published by . This book was released on 1995 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1992 with total page 918 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transistor Level Modeling for Analog RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Download or read book Ion Implantation and Activation written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2013-11-05 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Download or read book Monte Carlo simulation of ion implantation damage process in silicon written by Shiyang Tian and published by . This book was released on 1997 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 2002 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Accurate and Computationally efficient Model for Boron Implants Through an Overlying Oxide Layer Into Single crystal 100 Silicon written by Hsuan-Yu Lim and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many of the current implant applications in integrated circuits, a thin overlying amorphous oxide layer is often used to reduce the depth of dopant profiles by reducing the amount of channeling. The oxide layer is believed to randomly scatter a well-collimated (≤ 0.5° divergence) ion beam into a cone-shape angular distribution prior to its entry into the underlying single-crystal silicon. In this manner, most of the ions are scattered away from major axial and planar channels. A computationally-efficient 1-D model for boron implantation into single-crystal silicon through a screen oxide layer was developed. This model is of great interest and importance to the semiconductor industry for understanding process control issues in manufacturing and for guiding technology development. In developing this model, approximately 400 SIMS experimental profiles were obtained. In addition, the UT-MARLOWE Monte Carlo ion implant code was improved to generate boron profiles for part of the implant parameter space. It has been observed that boron implanted profiles are significantly dependent on the implant dose, energy, oxide layer thickness, tilt angle and rotation angle. A curve-fitting software program that uses the Dual Pearson Distribution function was used to extract the nine parameter values which define each profile. The parameters extracted for each profile are arranged into a lookup table where each set of nine parameter values corresponds to the profile for a particular combination of implant dose, energy, tilt angle, rotation angle and oxide thickness. Linear interpolation functions are employed to generate profiles for which there are no explicit set of parameters. This computationally-efficient model is able to generate as-implanted profiles of boron implantation through thin overlying oxides ranging from bare silicon (with a native oxide of approximately I.6nm) to 40nm, implant energies ranging from 15keV to 80keV, doses up to 1x1016cm−2, tilt angles ranging from 0°-10°, and rotation angles ranging from 0°-360°. This model is being implemented into SUPREM III, a widely used process simulation program used in the semiconductor industry in order to demonstrate the model. In this manner, the model will allow users to generate, in a highly computationally-efficient manner, accurate 1-D boron profiles as a function of implant dose, energy, oxide thickness, tilt angle and rotation angle
Download or read book Meeting Abstracts written by Electrochemical Society. Meeting and published by . This book was released on 1996 with total page 1700 pages. Available in PDF, EPUB and Kindle. Book excerpt:
