Download or read book Modeling gain degradation in bipolar junction transistors due to ionizing radiation and hot carrier stressing PHD written by Steven Louie Kosier and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current Gain Degradation in Bipolar Junction Transistors Due to Radiation Electrical and Mechanical Stresses PHD written by Steven Christopher Witczak and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1993 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Correlation of Hot carrier Stress and Ionization Induced Degradation in Bipolar Transistors written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot carrier Reliability of Bipolar Transistors and Circuits written by Burnett James and published by . This book was released on 1990 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Noise Study of Bipolar Junction Transistor Reliability written by Chih-Chieh Jack Sun and published by . This book was released on 1993 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling of Transient Ionizing Radiation Effects in Bipolar Devices at High Dose rates written by and published by . This book was released on 2000 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: To optimally design circuits for operation at high intensities of ionizing radiation, and to accurately predict their a behavior under radiation, precise device models are needed that include both stationary and dynamic effects of such radiation. Depending on the type and intensity of the ionizing radiation, different degradation mechanisms, such as photoelectric effect, total dose effect, or single even upset might be dominant. In this paper, the authors consider the photoelectric effect associated with the generation of electron-hole pairs in the semiconductor. The effects of low radiation intensity on p-II diodes and bipolar junction transistors (BJTs) were described by low-injection theory in the classical paper by Wirth and Rogers. However, in BJTs compatible with modem integrated circuit technology, high-resistivity regions are often used to enhance device performance, either as a substrate or as an epitaxial layer such as the low-doped n-type collector region of the device. Using low-injection theory, the transient response of epitaxial BJTs was discussed by Florian et al., who mainly concentrated on the effects of the Hi-Lo (high doping - low doping) epilayer/substrate junction of the collector, and on geometrical effects of realistic devices. For devices with highly resistive regions, the assumption of low-level injection is often inappropriate, even at moderate radiation intensities, and a more complete theory for high-injection levels was needed. In the dynamic photocurrent model by Enlow and Alexander. p-n junctions exposed to high-intensity radiation were considered. In their work, the variation of the minority carrier lifetime with excess carrier density, and the effects of the ohmic electric field in the quasi-neutral (q-n) regions were included in a simplified manner. Later, Wunsch and Axness presented a more comprehensive model for the transient radiation response of p-n and p-i-n diode geometries. A stationary model for high-level injection in p-n junctions was developed by Isaque et al. They used a more complete ambipolar transport equation, which included the dependencies of the transport parameters (ambipolar diffusion constant, mobility, and recombination rate) on the excess minority carrier concentration. The expression used for the recombination rate was that of Shockley-Reed-Hall (SRH) recombination which is dominant for low to mid-level radiation intensities. However, at higher intensities, Auger recombination becomes important eventually dominant. The complete ambipolar transport equation including the complicated dependence of transport parameters on the radiation intensity, cannot be solved analytically. This solution is obtained for each of the regimes where a given recombination mechanism dominates, and then by joining these solutions using appropriate smoothing functions. This approach allows them to develop a BJT model accounting for the photoelectric effect of the ionizing radiation that can be implemented in SPICE.

Download or read book An Investigation of Hot Electron Induced Degradation for Silicon Bipolar Transistors written by Chi-Jung Huang and published by . This book was released on 1992 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling the Bipolar Transistor written by Ian E. Getreu and published by Elsevier Science & Technology. This book was released on 1978 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Separating Radiation and Thermal Effects on Lateral PNP Bipolar Junction Transistors Operating in the Space Environment written by Michael J. Campola and published by . This book was released on 2011 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced gain degradation in bipolar devices is considered to be the primary threat to linear bipolar circuits operating in the space environment. The damage is primarily caused by charged particles trapped in the Earth's magnetosphere, the solar wind, and cosmic rays. This constant radiation exposure leads to early end-of-life expectancies for many electronic parts. Exposure to ionizing radiation increases the density of oxide and interfacial defects in bipolar oxides leading to an increase in base current in bipolar junction transistors. Radiation-induced excess base current is the primary cause of current gain degradation. Analysis of base current response can enable the measurement of defects generated by radiation exposure. In addition to radiation, the space environment is also characterized by extreme temperature fluctuations. Temperature, like radiation, also has a very strong impact on base current. Thus, a technique for separating the effects of radiation from thermal effects is necessary in order to accurately measure radiation-induced damage in space. This thesis focuses on the extraction of radiation damage in lateral PNP bipolar junction transistors and the space environment. It also describes the measurement techniques used and provides a quantitative analysis methodology for separating radiation and thermal effects on the bipolar base current.

Download or read book Hardness Assurance for Long Term Ionizing Radiation Effects on Bipolar Structures written by Arthur R. Hart and published by . This book was released on 1978 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work assessed the theoretical understanding of long-term ionization effects in semiconductor bipolar devices in support of developing hardness assurance techniques. The principal effort was directed at investigating transistor gain degradation mechanisms by use of models relating semiconductor physical and electrical parameters to surface properties. Ionizing radiation effects on surface properties were used to identify critical physical parameters for use in hardness assurance procedures. Model implications and predictions were then compared with existing data to evaluate accuracy and usefulness. This investigation demonstrated that current theories regarding the surface of bipolar transistors appear to describe the major parameter dependencies if ionizing radiation effects are not considered. It is when radiation effects are incorporated into these theories (models) that fundamental questions arise as to their completeness or validity. Specific questions were found when the surface models originally defined by Reddi and Grove were used to predict the experimental radiation data observed by Sivo. (Author).

Download or read book The Bipolar Junction Transistor written by Gerold W. Neudeck and published by Addison Wesley Publishing Company. This book was released on 1983 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents both a qualitative and quantitative description of the device.

Download or read book A New Degradation Mechanism Associated with Hydrogen in Bipolar Transistors Under Hot Carrier Stress written by Parameswaran K. Gopi and published by . This book was released on 1992 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effects of Ionizing Radiation on Transistor Gain written by D. L. Nelson and published by . This book was released on 1965 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.

Download or read book Hot Carrier induced Degradation and Gamma Radiation induced Degradation in Silicon germanium HBTs and VCOs microform written by Coralie R. (Coralie Ruth) Gill and published by Library and Archives Canada = Bibliothèque et Archives Canada. This book was released on 2004 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mechanisms of Ionizing radiation induced Gain Degradation in Lateral PNP BJTs written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Techniques for Screening Bipolar Transistor Degradation Due to Ionizing Radiation written by W. C. Bruncke and published by . This book was released on 1974 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two methods for screening bipolar parameter degradation due to exposure to ionizing radiation were explored. These were: the use of a scanning electron microscope (SEM) as a controlled simulator of a Co60 source irradiation and the use of surface sensitive test devices to assess the potential hardness of bipolar oxides. The goal was the development of screening techniques which could be applied in a production environment to evaluate hardness to ionizing radiation while the devices were in slice form. The technique of using the SEM as a simulator for a Co60 source, delivering a total ionizing dose, was shown to be feasible. The second screening method involved the design and implementation of a test bar which placed a number of experimental devices on a common die with two p-n-p transistors. The structures on the test bar which were to characterize the oxides and the Si-SiO2 interface of the transistor pair included dated diodes, a p-n-p tetrode, MOS capacitors, and an N-channel MOSFET. Pre-irradiation characterization of the oxides was explored as a measure of post-irradiation degradation of the p-n-p transistors. The data presented here shows only limited success in the use of this method as a screen.