Download or read book Modeling Bipolar Power Semiconductor Devices written by Tanya K. Gachovska and published by Springer Nature. This book was released on 2022-05-31 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
Download or read book Modeling Bipolar Power Semiconductor Devices written by Tanya K. Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-03 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.
Download or read book Transient Electro Thermal Modeling of Bipolar Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Morgan & Claypool Publishers. This book was released on 2013-11-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Modeling of Bipolar Power Semiconductor Devices written by Cliff Liewei Ma and published by . This book was released on 1994 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Electro Thermal Modeling on Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Springer. This book was released on 2013-11-26 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Fundamentals of Power Semiconductor Devices written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-04-02 with total page 1085 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Download or read book Transient Electro Thermal Modeling on Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Springer Nature. This book was released on 2022-06-01 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Bipolar transistor and MOSFET device models written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2016-03-02 with total page 587 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.
Download or read book Discrete and Integrated Power Semiconductor Devices written by Vítezslav Benda and published by John Wiley & Sons. This book was released on 1999-01-26 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dieses Buch beschreibt in leicht verständlicher Weise Aufbau, Funktion, Eigenschaften und Anwendungsmöglichkeiten wichtiger Halbleiter-Bauelemente - von Leistungsdioden über Thyristoren und MOSFETs bis hin zu integrierten Systemen. Die Autoren verzichten dabei auf komplizierte Mathematik; sie stützen sich vielmehr auf grundlegende physikalische Modelle. (11/98)
Download or read book Power Semiconductor Devices and Circuits written by A.A. Jaecklin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: This symposium was the sCientific-technical event of the centennial celebration of the Asea Brown Boveri Switzerland. The purpose was to assess the present state of the art as well as shaping the basis for future progress in the area of power devices and related power circuits. The merger of Brown Boveri (BBC) with Asea to Asea Brown Boveri (ABB) three years ago gave new stimulus and enriched the technical substance of the symposium. By 1991, 100 years after the formation of BBC in Switzerland as a single company, this organization has been decentralized, forming 35 independent ABB companies. One of them - ABB Semiconductors Ltd. - directly deals with the power semiconductor business. These significant changes reflect the changes in the market place: increased competition and higher customer expectations have to be fulfilled. In line with the core business activities of ABB and with the concept of sustainable development, it is natural for ABB to be active in the area of power devices and circuits. Increased awareness towards energy conservation is one of the main drives for these activities. User friendliness is another drive: integration of intelligent functions, e.g. protection and/or increased direct computer interfacing of the power circuits. Therefore, also the R&D activities related to the subject of thIs symposium will in the future be characterized by an even stronger coupling with the market needs. For the members of the R&D Laboratories this means improved customer partnership beyond operational excellence.
Download or read book Integrated Power Devices and TCAD Simulation written by Yue Fu and published by CRC Press. This book was released on 2017-12-19 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Download or read book Fundamentals of Power Semiconductor Devices written by B. Jayant Baliga and published by Springer. This book was released on 2018-09-28 with total page 1086 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Download or read book Analysis and Numerical Simulation of Current Filamentation in Power Semiconductor Devices written by Klas Lilja and published by . This book was released on 1993 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: "In this thesis the current filamentation phenomenon in thyristors and bipolar power transistors is investigated by means of modeling and numerical simulation. Current filmanetation is an instability leading to a concentration of the current to a small spot in a device, a filament. It limits performance and can lead to device destruction. The main emphasis of the investigation is given to thyristors with turn-off capability (GTO, MCT) and several remedies to the filamentation problem, including a completely new device structure, are proposed and analyzed."--Back cover.
Download or read book Power Microelectronics Device And Process Technologies Second Edition written by Yung Chii Liang and published by World Scientific. This book was released on 2017-03-14 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: 'This is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.'IEEE Electrical Insulation MagazineThis descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Download or read book Power Electronics Semiconductor Devices written by Robert Perret and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 381 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book relates the recent developments in several key electrical engineering R&D labs, concentrating on power electronics switches and their use. The first sections deal with key power electronics technologies, MOSFETs and IGBTs, including series and parallel associations. The next section examines silicon carbide and its potentiality for power electronics applications and its present limitations. Then, a dedicated section presents the capacitors, key passive components in power electronics, followed by a modeling method allowing the stray inductances computation, necessary for the precise simulation of switching waveforms. Thermal behavior associated with power switches follows, and the last part proposes some interesting prospectives associated to Power Electronics integration.
Download or read book POWER HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
