Download or read book Modeling and Analysis of Power MOSFETs for High Frequency DC DC Converters written by Yali Xiong and published by . This book was released on 2008 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: Evolutions in integrated circuit technology require the use of a high-frequency synchronous buck converter in order to achieve low cost, low profile, fast transient response and high power density. However, high frequency operation leads to increased power MOSFET switching losses. Optimization of the MOSFETs plays an important role in improving converter performance. This dissertation focuses on revealing the power loss mechanism of power MOSFETs and the relationship between power MOSFET structure and its power loss. The analytical device model, combined with circuit modeling, cannot reveal the relationship between device structure and its power loss due to the highly non-linear characteristics of power MOSFETs. A physically-based mixed device/circuit modeling approach is used to investigate the power losses of the MOSFETs under different operating conditions. The physically based device model, combined with SPICE-like circuit simulation, provides an expeditious and inexpensive way of evaluating and optimizing circuit and device concepts. Unlike analytical or other SPICE models of power MOSFETs, the numerical device model, relying little on approximations or simplifications, faithfully represents the behavior of realistic power MOSFETs. The impact of power MOSFET parameters on efficiency of synchronous buck converters, such as gate charge, on resistance, reverse recovery, is studied in detail in this thesis. The results provide a good indication on how to optimize power MOSFETs used in VRMs. The synchronous rectifier plays an important role in determining the performance of the synchronous buck converter. The reverse recovery of its body diode and the Cdv/dt induced false trigger-on are two major mechanisms that impact SyncFET's performance. This thesis gives a detailed analysis of the SyncFET operation mechanism and provides several techniques to reduce its body-diode influence and suppress its false Cdv/dt trigger-n. This thesis also investigates the influence of several circuit level parameters on the efficiency of the synchronous buck converter, such as input voltage, circuit parasitic inductance, and gate resistance to provide further optimization of synchronous buck converter design.

Download or read book On the perspectives of SiC MOSFETs in high frequency and high power isolated DC DC converters written by Eial Awwad, Abdullah and published by Universitätsverlag der TU Berlin. This book was released on 2020-08-11 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Increasing demand for efficiency and power density pushes Si-based devices to some of their inherent material limits, including those related to temperature operation, switching frequency, and blocking voltage. Recently, SiC-based power devices are promising candidates for high-power and high-frequency switching applications. Today, SiC MOSFETs are commercially available from several manufacturers. Although technology affiliated with SiC MOSFETs is improving rapidly, many challenges remain, and some of them are investigated in this work. The research work in this dissertation is divided into the three following parts. Firstly, the static and switching characteristics of the state-of-the-art 1.2 kV planar and double-trench SiC MOSFETs from two different manufacturers are evaluated. The effects of different biasing voltages, DC link voltages, and temperatures are analysed. The characterisation results show that the devices exhibit superior switching performances under different operating conditions. Moreover, several aspects of using the SiC MOSFET’s body diode in a DC/DC converter are investigated, comparing the body-diodes of planar and double-trench devices. Reverse recovery is evaluated in switching tests considering the case temperature, switching rate, forward current, and applied voltage. Based on the measurement results, the junction temperature is estimated to guarantee safe operation. A simple electro-thermal model is proposed in order to estimate the maximum allowed switching frequency based on the thermal design of the SiC devices. Using these results, hard- and soft-switching converters are designed, and devices are characterised as being in continuous operation at a very high switching frequency of 1 MHz. Thereafter, the SiC MOSFETs are operated in a continuous mode in a 10 kW / 100-250 kHz buck converter, comparing synchronous rectification, the use of the body diode, and the use of an external Schottky diode. Further, the parallel operation of the planar devices is considered. Thus, the paralleling of SiC MOSFETs is investigated before comparing the devices in continuous converter operation. In this regard, the impact of the most common mismatch parameters on the static and dynamic current sharing of the transistors is evaluated, showing that paralleling of SiC MOSFETs is feasible. Subsequently, an analytical model of SiC MOSFETs for switching loss optimisation is proposed. The analytical model exhibits relatively close agreement with measurement results under different test conditions. The proposed model tracks the oscillation effectively during both turn-on and –off transitions. This has been achieved by considering the influence of the most crucial parasitic elements in both power and gate loops. In the second part, a comprehensive short-circuit ruggedness evaluation focusing on different failure modes of the planar and double-trench SiC devices is presented. The effects of different biasing voltages, DC link voltages, and gate resistances are evaluated. Additionally, the temperature-dependence of the short-circuit capability is evaluated, and the associated failure modes are analysed. Subsequently, the design and test of two different methods for overcurrent protection are proposed. The desaturation technique is applied to the SiC MOSFETs and compared to a second method that depends on the stray inductance of the devices. Finally, the benefits of using SiC devices in continuous high-frequency, high-power DC/DC converters is experimentally evaluated. In this regard, a design optimisation of a high-frequency transformer is introduced, and the impact of different core materials, conductor designs, and winding arrangements are evaluated. A ZVZCS Phase-Shift Full-Bridge unidirectional DC/DC converter is proposed, using only the parasitic leakage inductance of the transformer. Experimental results for a 10 kW, (100-250) kHz prototype indicate an efficiency of up to 98.1% for the whole converter. Furthermore, an optimized control method is proposed to minimise the circulation current in the isolated bidirectional dual active bridge DC/DC converter, based on a modified dual-phase-shift control method. This control method is also experimentally compared with traditional single-phase shift control, yielding a significant improvement in efficiency. The experimental results confirm the theoretical analysis and show that the proposed control can enhance the overall converter efficiency and expand the ZVZCS range. Die steigende Nachfrage nach Effizienz und Leistungsdichte bringt Si-basierte eistungsbauteile an einige inhärente Materialgrenzen, die unter anderem mit der Temperaturbelastung, der Schaltfrequenz und der Blockierspannung in Zusammenhang stehen. In jüngster Zeit sind SiC-basierte Leistungsbauelemente vielversprechende Kandidaten für Hochleistungs- und Hochfrequenzanwendungen. Aktuell sind SiC-MOSFETs von mehreren Herstellern im Handel erhältlich. Obwohl sich die Technologie der SiC-MOSFETs rasch verbessert, werden viele Herausforderungen bestehen bleiben. Einige dieser Herausforderungen werden in dieser Arbeit untersucht. Die Untersuchungen in dieser Dissertation gliedern sich in die drei folgenden Teile: Im ersten Teil erfolgt, die statische und die transiente Charakterisierung der aktuellen 1,2 kV Planarund Doubletrench SiC-MOSFETs verschiedener Hersteller. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Temperaturen werden analysiert. Die Ergebnisse der Charakterisierung zeigen, dass die Bauteile überlegene Schaltleistungen unter verschiedenen Betriebsbedingungen aufweisen. Darüber hinaus wird der Einsatz der internen SiC-Bodydioden in einem DC/DC-Wandler untersucht, wobei die Unterschiede zwischen Planar- und Doppeltrench-Bauteilen aufgezeigt werden. Das Reverse-Recovery-Verhalten wird unter Berücksichtigung der Gehäusetemperatur, der Schaltgeschwindigkeit, des Durchlassstroms und der angelegten Spannung bewertet. Anhand der Messergebnisse wird die Sperrschichttemperatur geschätzt, damit ein sicherer Betrieb gewährleistet ist. Ein einfaches elektrothermisches Modell wird vorgestellt, um die maximal zulässige Schaltfrequenz auf der Grundlage des thermischen Designs der SiC-Bauteile abzuschätzen. Anhand dieser Ergebnisse werden hart- und weichschaltende Umrichter konzipiert und die Bauteile werden im Dauerbetrieb mit einer sehr hohen Schaltfrequenz von 1 MHz untersucht. Danach werden die SiC-MOSFETs im Dauerbetrieb in einem 10 kW / 100-250 kHz-Tiefsetzsteller betrieben. Dabei wird die Synchrongleichrichtung, die Verwendung der internen Diode und die Verwendung einer externen Schottky-Diode verglichen. Außerdem wird die Parallelisierung von SiC-MOSFETs untersucht, bevor die Parallelschaltung der verschiedenen Bauelemente ebenso im kontinuierlichen Konverterbetrieb verglichen wird. Es wird der Einfluss der häufigsten Parametervariationen auf die statische und dynamische Stromaufteilung der Transistoren analysiert, was zeigt, dass eine Parallelisierung von SiC-MOSFETs möglich ist. Anschließend wird ein analytisches Modell der SiC-MOSFETs zur Schaltverlustoptimierung vorgeschlagen. Das analytische Modell zeigt eine relativ enge Übereinstimmung mit den Messergebnissen unter verschiedenen Testbedingungen. Das vorgeschlagene Modell bildet die Schwingungen sowohl beim Ein- als auch beim Ausschalten effektiv nach. Dies wurde durch die Berücksichtigung der wichtigsten parasitären Elemente in Strom- und Gatekreisen erreicht. Im zweiten Teil wird eine umfassende Bewertung der Kurzschlussfestigkeit mit Fokus auf verschiedene Ausfallmodi der planaren und double-trench SiC-Bauelemente vorgestellt. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Gate-Widerstände werden ausgewertet. Zusätzlich wird die temperaturabhängige Kurzschlussfähigkeit ausgewertet und die zugehörigen Fehlerfälle werden analysiert. Anschließend wird die Auslegung und Prüfung von zwei verschiedenen Verfahren zum Überstromschutz evaluiert. Die „Desaturation“-Technik wird auf SiC-MOSFETs angewendet und mit einer zweiten Methode verglichen, welche die parasitäre Induktivität der Bauelemente nutzt. Schließlich wird der Nutzen des Einsatzes von SiC-Bauteilen in kontinuierlichen Hochfrequenz-Hochleistungs-DC/DC-Wandlern experimentell untersucht. In diesem Zusammenhang wird eine Designoptimierung eines Hochfrequenztransformators vorgestellt und der Einfluss verschiedener Kernmaterialien, Leiterausführungen und Wicklungsanordnungen wird bewertet. Es wird ein unidirektionaler ZVZCS Vollbrücken-DC/DC-Wandler vorgestellt, der nur die parasitäre Streuinduktivität des Transformators verwendet. Experimentelle Ergebnisse für einen 10 kW, (100-250) kHz Prototyp zeigen einenWirkungsgrad von bis zu 98,1% für den gesamten Umrichter. Abschließend wird ein optimiertes Regelverfahren verwendet, welches auf einem modifizierten Dual-Phase-Shift-Regelverfahren basiert, um den Kreisstrom im isolierten bidirektionalen Dual-Aktiv-Brücken-DC/DC-Wandler zu minimieren. Diese Regelmethode wird experimentell mit der herkömmlichen Single-Phase-Shift-Regelung verglichen. Hierbei zeigt sich eine deutliche Effizienzsteigerung durch die neue Regelmethode. Die experimentellen Ergebnisse bestätigen die theoretische Analyse und zeigen, dass die vorgeschlagene Regelung den Gesamtwirkungsgrad des Umrichters erhöhen und den ZVZCS-Bereich erweitern kann.

Download or read book Design and Optimization of Power MOSFET Output Stage for High frequency Integrated DC DC Converters written by Junmin Lee and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Switching device power losses place critical limits on the design and performance of high-frequency integrated DC-DC converters. Especially, the layout of metal interconnects in lateral power MOSFETs has a profound effect on their on-resistances and conduction power losses. This thesis presents an analytical interconnect modeling and layout optimization technique for large-area power MOSFETs. The layout optimization of 24V LDMOS transistors in the area of 1 mm2 has achieved an improvement of 55 % in its on-resistance. The simulation result has been verified by experimental measurements on a test chip fabricated in TSMC 0.25 μm HV CMOS technology. In addition, this thesis presents an optimized output stage design methodology for the implementation of a 4 MHz, 12V to 1V integrated DC-DC converter. A segmented output stage scheme is employed to increase the converter efficiency at light load conditions. The peak efficiency of 84% was achieved at load current of 2 A.

Download or read book Pulse width Modulated DC DC Power Converters written by Marian K. Kazimierczuk and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book studies switch-mode power supplies (SMPS) in great detail. This type of converter changes an unregulated DC voltage into a high-frequency pulse-width modulated (PWM) voltage controlled by varying the duty cycle, then changes the PWM AC voltage to a regulated DC voltage at a high efficiency by rectification and filtering. Used to supply electronic circuits, this converter saves energy and space in the overall system. With concept-orientated explanations, this book offers state-of-the-art SMPS technology and promotes an understanding of the principle operations of PWM converters, as well as enabling the readers to evaluate their characteristics. Design-orientated analysis (including a steady-state analysis for both continuous and discontinuous conduction modes) and numerous real-world practical examples (including circuit models of the PWM converters) demonstrate how to design these from scratch. The book provides an in-depth presentation of topologies of PWM DC-DC power converters, voltage- and current-mode control of PWM DC–DC power converters, considers power losses in all components, device stresses, output voltage ripple, converter efficiency and power factor correction (PFC). It also includes extensive coverage of the following: topologies of high-efficiency switching-mode PWM and soft-switching DC-DC power converters; DC voltage transfer functions (conversion ratios), component values, losses, efficiency, and stresses; small-signal averaged circuit models; current-mode and voltage-mode feedback controls; metal-oxide-semiconductor field-effect power transistors (MOSFETs); silicon (Si) and silicon carbide (SiC) power semiconductor devices. Before now, there has been no book that covers silicon carbide devices. Pulse-width Modulated DC-DC Power Converters is a comprehensive textbook for senior undergraduate and graduate students in the areas of electrical, electronics, and telecommunications engineering. It includes end-of-chapter review questions, problems, and thorough summaries of the key concepts to aid learning, and a Solutions Manual is available for professors. Scientists and practicing design engineers working with SMPS, within such applications as computers, telecommunications, industrial systems, automobile electronics, medical equipment, aerospace power technology, and radars (amongst others) will also find this text insightful.

Download or read book Digital Aided Synchronization and Mixed Signal Modeling of High Frequency Dc dc Converters written by Deepak Bhatia and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In addition, a behavioral model which describes the dc-dc converter as a voltage controlled oscillator is proposed and the analysis of the entire design as a Charge Pump PLL (CPPLL) is presented. The DPLL synchronized converter works over a frequency range of 90-240MHz and was implemented in a 130nm digital CMOS process. A simulation approach for mixed signal designs is described. This methodology helps in reducing interface problems for large designs and also decreases simulation time. In addition, aspects of digital synthesis flow are described. A mixed signal simulation of a DPLL synchronized buck converter is presented as an example to show how SpectreVerilog can be used to validate the analog-digital interface and verify proper functionality of the design.

Download or read book Equivalent Small Parameter Analysis of DC DC Switched Mode Converter written by Yanfeng Chen and published by Springer. This book was released on 2018-10-06 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the applications of Equivalent-Small-Parameter Method (ESPM) in solving the steady-state periodic solutions, as well as stability analysis, of kinds of open-loop or closed-loop operated DC/DC converters, such as PWM, quasi-resonant and resonant ones. The analytical expressions of DC components and harmonics of state variables (inductor current and capacitor voltage) with DC/DC converters can be obtained by ESPM, which can be helpful to understand the nonlinear operating mechanism of switched-mode converters. It can also be useful for stability analysis and design for practical converters. Modeling and analysis on all kinds of DC/DC converters are introduced in detail in this book, along with a large amount of simulation or experimental waveforms to verify the correctness of the theoretical analysis based on ESPM.

Download or read book On the Perspectives of SiC MOSFETs in High frequency and High power Isolated DC DC Converters written by Abdullah Eial Awwad and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book MOSFET Modeling for Circuit Analysis and Design written by Carlos Galup-Montoro and published by World Scientific. This book was released on 2007 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Download or read book Modeling and Analysis with Induction Generators written by M. Godoy Simões and published by CRC Press. This book was released on 2014-12-11 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt: Now in its Third Edition, Alternative Energy Systems: Design and Analysis with Induction Generators has been renamed Modeling and Analysis with Induction Generators to convey the book's primary objective-to present the fundamentals of and latest advances in the modeling and analysis of induction generators. New to the Third EditionRevised equations

Download or read book Sampled Data Modeling and Analysis of the Power Stage of PWM DC DC Converters written by and published by . This book was released on 1999 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: The power stage of the PWM DC-DC converter is modeled and analyzed using the sampled data approach. The work addresses continuous and discontinuous conduction mode under voltage mode control, and continuous conduction mode under current mode control. For each configuration, nonlinear and linearized sampled-data models, and control-to-output transfer function are derived. Using this approach, both current mode control and discontinuous conduction mode can be handled systematically in a unified framework, making the modeling for these cases simpler than with the use of averaging. The results of this paper are similar to results of Tymerski, but they are presented in a simpler manner tailored to facilitate immediate application to specific circuits. It is shown how sampling the output at certain instants improves the obtained phase response. Frequency responses obtained from the sampled-data model are more accurate than those obtained from various averaged models. In addition, a new ("lifted") continuous-time switching frequency-dependent model of the power stage is derived from the sampled-data model. Detailed examples illustrate the modeling tools presented here, and also provide a means of comparing results obtained from the sampled-data approach with those obtained from averaging.

Download or read book Low Voltage Power MOSFETs written by Jacek Korec and published by Springer Science & Business Media. This book was released on 2011-03-30 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Voltage Power MOSFETs focuses on the design of low voltage power MOSFETs and the relation between the device structure and the performance of a power MOSFET used as a switch in power management applications. This SpringerBriefs close the gap between detailed engineering reference books and the numerous technical papers on the subject of power MOSFETs. The material presented covers low voltage applications extending from battery operated portable electronics, through point of load converters, internet infrastructure, automotive applications, to personal computers and server computers. The issues treated in this volume are explained qualitatively using schematic illustrations, making the discussion easy to follow for all prospective readers.

Download or read book Some Considerations on Circuit Modeling Layout and Instrumentation of Experimental High power High frequency DC DC Converters written by Rhett Trusdale George and published by . This book was released on 1981 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced DC DC Power Converters and Switching Converters written by Salvatore Musumeci and published by MDPI. This book was released on 2021-03-30 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays, power electronics is an enabling technology in the energy development scenario. Furthermore, power electronics is strictly linked with several fields of technological growth, such as consumer electronics, IT and communications, electrical networks, utilities, industrial drives and robotics, and transportation and automotive sectors. Moreover, the widespread use of power electronics enables cost savings and minimization of losses in several technology applications required for sustainable economic growth. The topologies of DC–DC power converters and switching converters are under continuous development and deserve special attention to highlight the advantages and disadvantages for use increasingly oriented towards green and sustainable development. DC–DC converter topologies are developed in consideration of higher efficiency, reliable control switching strategies, and fault-tolerant configurations. Several types of switching converter topologies are involved in isolated DC–DC converter and nonisolated DC–DC converter solutions operating in hard-switching and soft-switching conditions. Switching converters have applications in a broad range of areas in both low and high power densities. The articles presented in the Special Issue titled "Advanced DC-DC Power Converters and Switching Converters" consolidate the work on the investigation of the switching converter topology considering the technological advances offered by innovative wide-bandgap devices and performance optimization methods in control strategies used.

Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Download or read book EDN written by and published by . This book was released on 1980 with total page 1466 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling Analysis and Design of Fixed frequency Series parallel Resonant Dc dc Converters Using the Extended Describing Function Method written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Multi voltage CMOS Circuit Design written by Volkan Kursun and published by John Wiley & Sons. This book was released on 2006-08-30 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents an in-depth treatment of various power reduction and speed enhancement techniques based on multiple supply and threshold voltages. A detailed discussion of the sources of power consumption in CMOS circuits will be provided whilst focusing primarily on identifying the mechanisms by which sub-threshold and gate oxide leakage currents are generated. The authors present a comprehensive review of state-of-the-art dynamic, static supply and threshold voltage scaling techniques and discuss the pros and cons of supply and threshold voltage scaling techniques.