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Book Metal semiconductor Interfaces

Download or read book Metal semiconductor Interfaces written by Akio Hiraki and published by IOS Press. This book was released on 1995 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electronic Properties of Semiconductor Interfaces

Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Book Metallization and Metal Semiconductor Interfaces

Download or read book Metallization and Metal Semiconductor Interfaces written by Inder P. Batra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.

Book Metal Semiconductor Schottky Barrier Junctions and Their Applications

Download or read book Metal Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.

Book Metal     Semiconductor Contacts and Devices

Download or read book Metal Semiconductor Contacts and Devices written by Simon S. Cohen and published by Academic Press. This book was released on 2014-12-01 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.

Book Semiconductor Surfaces and Interfaces

Download or read book Semiconductor Surfaces and Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.

Book Electronic Structure of Semiconductor Interfaces

Download or read book Electronic Structure of Semiconductor Interfaces written by Winfried Mönch and published by Springer Nature. This book was released on 2024 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains intrinsic interface states of electron states that overlap the band gap of a semiconductor at the interface Includes experimental data on Schottky contacts including carrier height, ideality factor and flat-band barrier height Compares of Theoretical and Experimental Data for a range of semiconductors.

Book Metal semiconductor Contacts

Download or read book Metal semiconductor Contacts written by E. H. Rhoderick and published by Oxford University Press, USA. This book was released on 1988 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.

Book Engineering of Metal semiconductor Interfaces

Download or read book Engineering of Metal semiconductor Interfaces written by Liangjin Chen and published by . This book was released on 2000 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electronic Structure of Metal Semiconductor Contacts

Download or read book Electronic Structure of Metal Semiconductor Contacts written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Book Structural  Chemical  and Electrical Characterization of Metal semiconductor Interfaces

Download or read book Structural Chemical and Electrical Characterization of Metal semiconductor Interfaces written by Ilija Milija Vitomirov and published by . This book was released on 1989 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Plasmonic Catalysis

Download or read book Plasmonic Catalysis written by Pedro H.C. Camargo and published by John Wiley & Sons. This book was released on 2021-06-21 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explore this comprehensive discussion of the foundational and advanced topics in plasmonic catalysis from two leaders in the field Plasmonic Catalysis: From Fundamentals to Applications delivers a thorough treatment of plasmonic catalysis, from its theoretical foundations to myriad applications in industry and academia. In addition to the fundamentals, the book covers the theory, properties, synthesis, and various reaction types of plasmonic catalysis. It also covers its applications in reactions including oxidation, reduction, nitrogen fixation, CO2 reduction, and more. The book characterizes plasmonic catalytic systems and describes their properties, tackling the integration of conventional methods as well as new methods able to unravel the optical, electronic, and chemical properties of these systems. It also describes the fundamentals of controlled synthesis of metal nanoparticles relevant to plasmonic catalysis, as well as practical examples thereof. Plasmonic Catalysis covers a wide variety of other practical topics in the field, including hydrogenation reactions and the harvesting of LSPR-excited charge carriers. Readers will also benefit from the inclusion of: A thorough introduction to plasmonic catalysis, a theory of plasmons for catalysis and mechanisms, as well as optical properties of plasmonic-catalytic nanostructures An exploration of the synthesis of plasmonic nanoparticles for photo and electro catalysis, as well as plasmonic catalysis towards oxidation reactions and hydrogenation reactions Discussions of plasmonic catalysis for multi-electron processes and artificial photosynthesis and N2 fixation An examination of control over reaction selectivity in plasmonic catalysis Perfect for catalytic chemists, materials scientists, photochemists, and physical chemists, Plasmonic Catalysis: From Fundamentals to Applications will also earn a place in the libraries of physicists who seek a one-stop resource to enhance their understanding of applications in plasmonic catalysis.

Book Electronic States at Metal Semiconductor Interfaces

Download or read book Electronic States at Metal Semiconductor Interfaces written by G. Hughes and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Surface and Interface Effects in VLSI

Download or read book Surface and Interface Effects in VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.

Book Metal semiconductor Contacts

Download or read book Metal semiconductor Contacts written by E. H. Rhoderick and published by Oxford University Press, USA. This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.