Download or read book Metalorganic Chemical Vapor Deposition MOCVD of GaAs Using Organometallic Arsenic Precursors written by Thomas Robert Omstead and published by . This book was released on 1989 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources written by Dietrich W. Vook and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium and Gallium Arsenide written by Deborah A. Kramer and published by . This book was released on 1988 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide and Related Compounds 1992 Proceedings of the 19th INT Symposium 28 September 2 October 1992 Karuizawa Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Download or read book Proceedings of the Twenty fourth State of the Art Program on Compound Semiconductors written by F. Ren and published by The Electrochemical Society. This book was released on 1996 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapour Deposition written by Anthony C. Jones and published by Royal Society of Chemistry. This book was released on 2009 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-08-27 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photodetectors written by and published by Woodhead Publishing. This book was released on 2015-10-24 with total page 551 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photodetectors: Materials, Devices and Applications discusses the devices that convert light to electrical signals, key components in communication, computation, and imaging systems. In recent years, there has been significant improvement in photodetector performance, and this important book reviews some of the key advances in the field. Part one covers materials, detector types, and devices, and includes discussion of silicon photonics, detectors based on reduced dimensional charge systems, carbon nanotubes, graphene, nanowires, low-temperature grown gallium arsenide, plasmonic, Si photomultiplier tubes, and organic photodetectors, while part two focuses on important applications of photodetectors, including microwave photonics, communications, high-speed single photon detection, THz detection, resonant cavity enhanced photodetection, photo-capacitors and imaging. Reviews materials, detector types and devices Addresses fabrication techniques, and the advantages and limitations and different types of photodetector Considers a range of application for this important technology Includes discussions of silicon photonics, detectors based on reduced dimensional charge systems, carbon nanotubes, graphene, nanowires, and more
Download or read book Handbook of Integrated Circuit Industry written by Yangyuan Wang and published by Springer Nature. This book was released on 2023-12-29 with total page 2006 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the technology evolution trends, fabrication, applications, new materials, equipment, economy, investment, and industrial developments of integrated circuits. Especially, the coverage is broad in scope and deep enough for all kind of readers being interested in integrated circuit industry. Remarkable data collection, update marketing evaluation, enough working knowledge of integrated circuit fabrication, clear and accessible category of integrated circuit products, and good equipment insight explanation, etc. can make general readers build up a clear overview about the whole integrated circuit industry. This encyclopedia is designed as a reference book for scientists and engineers actively involved in integrated circuit research and development field. In addition, this book provides enough guide lines and knowledges to benefit enterprisers being interested in integrated circuit industry.
Download or read book Advances in Infrared Photodetectors written by and published by Elsevier. This book was released on 2011-05-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. - Written and edited by internationally renowned experts - Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry
Download or read book Gallium Arsenide and Related Compounds 1991 Proceedings of the Eighteenth INT Symposium 9 12 September 1991 Seattle USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-26 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Download or read book Physics and Chemistry of Interfaces written by Hans-Jürgen Butt and published by John Wiley & Sons. This book was released on 2006-03-06 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: Serving as a general introduction to surface and interface science, this book focuses on basic concepts rather than specific details, and on intuitive understanding rather than merely learning facts. The text reflects the fact that the physics and chemistry of surfaces is a diverse area of research that involves classical scientific and engineering disciplines. As such, it discusses fundamental subjects, such as thermodynamics of interfaces, as well as applied topics including wetting, friction, and lubrication. Following an introduction to the most important techniques and methods, readers will be able to apply simple models to their own scientific problems. Furthermore, manifold high end technological applications are shown together with the basic scientific treatment, for example AFM, surface technology, biotechnology, microelectronics, and biomaterials. The book is written with advanced students of chemistry, physics, materials science, chemical engineering and related subjects who have a basic knowledge of natural sciences and mathematics in mind. In addition, scientists and engineers who are not yet specialists in surface science but want to learn more about this important subject will equally benefit.
Download or read book Introduction to Surface Engineering and Functionally Engineered Materials written by Peter Martin and published by John Wiley & Sons. This book was released on 2011-09-06 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a clear and understandable text for users and developers of advanced engineered materials, particularly in the area of thin films, and addresses fundamentals of modifying the optical, electrical, photo-electric, triboligical, and corrosion resistance of solid surfaces and adding functionality to solids by engineering their surface, structure, and electronic, magnetic and optical structure. Thin film applications are emphasized. Through the inclusion of multiple clear examples of the technologies, how to use them,and the synthesis processes involved, the reader will gain a deep understanding of the purpose, goals, and methodology of surface engineering and engineered materials. Virtually every advance in thin film, energy, medical, tribological materials technologies has resulted from surface engineering and engineered materials. Surface engineering involves structures and compositions not found naturally in solids and is used to modify the surface properties of solids and involves application of thin film coatings, surface functionalization and activation, and plasma treatment. Engineered materials are the future of thin film technology. Engineered structures such as superlattices, nanolaminates, nanotubes, nanocomposites, smart materials, photonic bandgap materials, metamaterials, molecularly doped polymers and structured materials all have the capacity to expand and increase the functionality of thin films and coatings used in a variety of applications and provide new applications. New advanced deposition processes and hybrid processes are being used and developed to deposit advanced thin film materials and structures not possible with conventional techniques a decade ago. Properties can now be engineered into thin films that achieve performance not possible a decade ago.
