EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Characteristics of Silicon Nitride Deposited by VHF 162 MHz plasma Enhanced Chemical Vapor Deposition Using a Multi tile Push pull Plasma Source

Download or read book Characteristics of Silicon Nitride Deposited by VHF 162 MHz plasma Enhanced Chemical Vapor Deposition Using a Multi tile Push pull Plasma Source written by and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: To prevent moisture and oxygen permeation into flexible organic electronic devices formed on substrates, the deposition of an inorganic diffusion barrier material such as SiN x is important for thin film encapsulation. In this study, by a very high frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push–pull plasma source, SiN x layers were deposited with a gas mixture of NH3 /SiH4 with/without N2 and the characteristics of the plasma and the deposited SiN x film as the thin film barrier were investigated. Compared to a lower frequency (60 MHz) plasma, the VHF (162 MHz) multi-tile push–pull plasma showed a lower electron temperature, a higher vibrational temperature, and higher N2 dissociation for an N2 plasma. When a SiN x layer was deposited with a mixture of NH3 /SiH4 with N2 at a low temperature of 100 °C, a stoichiometric amorphous Si3 N4 layer with very low Si–H bonding could be deposited. The 300 nm thick SiN x film exhibited a low water vapor transmission rate of 1.18 × 10 −4 g (m 2 · d) −1, in addition to an optical transmittance of higher than 90%.

Book Synthesis and Characterization of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane

Download or read book Synthesis and Characterization of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition Using Diethylsilane written by Yanyao Yu and published by . This book was released on 1993 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Structural Optical and Mechanical Properties of Silicon Nitride Films Deposited by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition

Download or read book Structural Optical and Mechanical Properties of Silicon Nitride Films Deposited by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition written by Ezgi Abacıoğlu and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Plasma Enhanced Chemical Vapor Depostion of Fluorinated Silicon Nitride

Download or read book Plasma Enhanced Chemical Vapor Depostion of Fluorinated Silicon Nitride written by Rhett Eugene Livengood and published by . This book was released on 1987 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Synthesis and Characterization of Silicon Nitride Film Deposited by Plasma Enhanced Chemical Vapor Deposition from Ditertiary butyl Silane

Download or read book Synthesis and Characterization of Silicon Nitride Film Deposited by Plasma Enhanced Chemical Vapor Deposition from Ditertiary butyl Silane written by Kei-Turng Shih and published by . This book was released on 1991 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Modeling of Plasma enhanced Chemical Vapor Deposited Silicon Nitride Thin Films Into Confined Geometries

Download or read book Modeling of Plasma enhanced Chemical Vapor Deposited Silicon Nitride Thin Films Into Confined Geometries written by Ronald James Spence and published by . This book was released on 1993 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Growth of Silicon Nitride Crystalline Films Using Microwave Plasma Enhanced Chemical Vapor Deposition

Download or read book The Growth of Silicon Nitride Crystalline Films Using Microwave Plasma Enhanced Chemical Vapor Deposition written by and published by . This book was released on 1994 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 deg C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the alpha and beta phases. Scanning electron microscope imaging indicates beta-Si3N4 possesses six-fold symmetry with particles size in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In an another experiment, an organo- silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 micrometer/hr as determined by profilometry. A growth mechanism for both cases is proposed.

Book Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride and Oxynitride Films Using Disilane as Silicon Source

Download or read book Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride and Oxynitride Films Using Disilane as Silicon Source written by Giridhar Nallapati and published by . This book was released on 1999 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Thermal Stability of Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films

Download or read book Thermal Stability of Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films written by Neerushana Jehanathan and published by . This book was released on 2007 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: [Truncated abstract] This study investigates the thermal stability of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin films. Effects of heat-treatment in air on the chemical composition, atomic bonding structure, crystallinity, mechanical properties, morphological and physical integrity are investigated. The chemical composition, bonding structures and crystallinity are studied by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) Spectroscopy and Transmission Electron Microscopy (TEM). The mechanical properties, such as hardness and Young’s modulus, are determined by means of nanoindentation. The morphological and physical integrity are analyzed using Scanning Electron Microscopy (SEM) . . . The Young’s modulus (E) and hardness (H) of the film deposited at 448 K were measured to have E=121±1.8 GPa and H=11.7±0.25 GPa. The film deposited at 573 K has E=150±3.6 GPa and H=14.7±0.6 GPa. For the film deposited at 573 K, the Young’s modulus is not affected by heating up to 1148 K. Heating at 1373 K caused significant increase in Young’s modulus to 180∼199 GPa. This is attributed to the crystallization of the film. For the film deposited at 448 K, the Young’s modulus showed a moderate increase, by ∼10%, after heating to above 673 K. This is consistent with the much lower level of crystallization in this film as compared to the film deposited at 573 K. In summary, low temperature deposited PECVD SiNx films are chemically and structurally unstable when heated in air to above 673 K. The main changes include oxidation to SiO2, crystallization of Si3N4 and physical cracking. The film deposited at 573 K is more stable and damage and oxidation resistant than the film deposited at 448 K.