Download or read book Matching Properties of Deep Sub Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2006-06-20 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Download or read book Matching Properties of Deep Sub Micron MOS Transistors written by Jeroen A. Croon and published by Springer. This book was released on 2008-11-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Download or read book Charge Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.

Download or read book Nyquist AD Converters Sensor Interfaces and Robustness written by Arthur H.M. van Roermund and published by Springer Science & Business Media. This book was released on 2012-11-26 with total page 291 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on the 18 presentations during the 21st workshop on Advances in Analog Circuit Design. Expert designers provide readers with information about a variety of topics at the frontier of analog circuit design, including Nyquist analog-to-digital converters, capacitive sensor interfaces, reliability, variability, and connectivity. This book serves as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development.

Download or read book Compact Models for Integrated Circuit Design written by Samar K. Saha and published by CRC Press. This book was released on 2018-09-03 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Download or read book Nanometer Variation Tolerant SRAM written by Mohamed Abu Rahma and published by Springer Science & Business Media. This book was released on 2012-09-26 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.

Download or read book Stochastic Process Variation in Deep Submicron CMOS written by Amir Zjajo and published by Springer Science & Business Media. This book was released on 2013-11-19 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.

Download or read book Ulsi Front end Technology Covering From The First Semiconductor Paper To Cmos Finfet Technology written by Lau Wai Shing and published by World Scientific. This book was released on 2017-08-23 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book. Contents: PrefaceAuthor BiographyIntroduction to the History of SemiconductorsHistory of MOS TechnologyCMOS Switching Speed Characterization and An Overview Regarding How to Speed Up CMOSLow Power CMOS EngineeringAnalog CMOS TechnologyIndex Readership: The book is useful for researchers in semiconductor technology especially practicing engineers. Keywords: Semiconductor;Integrated Circuits;CMOS;High Speed;Low Power;Digital;Analog;Mixed-Signal;Planar Technology;FINFET;MIM CapacitorReview: Key Features: The book is readable for beginnersThe book is useful for semiconductor technology historiansThe book is useful for practicing engineers

Download or read book IQ Calibration Techniques for CMOS Radio Transceivers written by Sao-Jie Chen and published by Springer Science & Business Media. This book was released on 2006-09-22 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 802.11n wireless standard uses 64-state quadrature amplitude modulation (64-QAM) to achieve higher spectral efficiency. Consequently, the transmitter and receiver require a higher signal to noise ratio with the same level of error rate performance. This book offers a fully-analog compensation technique without baseband circuitry to control the calibration process. Using an 802.11g transceiver design as an example, it describes in detail an auto-calibration mechanism for I/Q gains and phases imbalance.

Download or read book High Speed Photodiodes in Standard CMOS Technology written by Sasa Radovanovic and published by Springer Science & Business Media. This book was released on 2006-10-11 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-speed Photodiodes in Standard CMOS Technology describes high-speed photodiodes in standard CMOS technology which allow monolithic integration of optical receivers for short-haul communication. For short haul communication the cost aspect is important , and therefore it is desirable that the optical receiver can be integrated in the same CMOS technology as the rest of the system. If this is possible then ultimately a singe-chip system including optical inputs becomes feasible, eliminating EMC and crosstalk problems, while data rate can be extremely high. The problem of photodiodes in standard CMOS technology it that they have very limited bandwidth, allowing data rates up to only 50Mbit per second. High-speed Photodiodes in Standard CMOS Technology first analyzes the photodiode behaviour and compares existing solutions to enhance the speed. After this, the book introduces a new and robust electronic equalizer technique that makes data rates of 3Gb/s possible, without changing the manufacturing technology. The application of this technique can be found in short haul fibre communication, optical printed circuit boards, but also photodiodes for laser disks.

Download or read book Low Power Low Voltage Sigma Delta Modulators in Nanometer CMOS written by Libin Yao and published by Springer Science & Business Media. This book was released on 2006-02-06 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: this book is not suitable for the bookstore catalogue

Download or read book Design of Very High Frequency Multirate Switched Capacitor Circuits written by Seng-Pan U and published by Springer Science & Business Media. This book was released on 2006 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design of Very High-Frequency Multirate Switched-Capacitor Circuits presents the theory and the corresponding CMOS implementation of the novel multirate sampled-data analog interpolation technique which has its great potential on very high-frequency analog frond-end filtering due to its inherent dual advantage of reducing the speed of data-converters and DSP core together with the specification relaxation of the post continuous-time filtering. This technique completely eliminates the traditional phenomenon of sampled-and-hold frequency-shaping at the lower input sampling rate. Also, in order to tackle physical IC imperfections at very high frequency, the state-of-the-art circuit design and layout techniques for high-speed Switched-Capacitor (SC) circuits are comprehensively discussed: -Optimum circuit architecture tradeoff analysis -Simple speed and power trade-off analysis of active elements -High-order filtering response accuracy with respect to capacitor-ratio mismatches -Time-interleaved effect with respect to gain and offset mismatch -Time-interleaved effect with respect to timing-skew and random jitter with non-uniformly holding -Stage noise analysis and allocation scheme -Substrate and supply noise reduction -Gain-and offset-compensation techniques -High-bandwidth low-power amplifier design and layout -Very low timing-skew multiphase generation Two tailor-made optimum design examples in CMOS are presented. The first one achieves a 3-stage 8-fold SC interpolating filter with 5.5MHz bandwidth and 108MHz output sampling rate for a NTSC/PAL CCIR 601 digital video at 3 V. Another is a 15-tap 57MHz SC FIR bandpass interpolating filter with 4-fold sampling rate increase to 320MHz and the first-time embedded frequency band up-translation for DDFS system at 2.5V. The corresponding chip prototype achieves so far the highest operating frequency, highest filter order and highest center frequency with highest dynamic range under the lowest supply voltage when compared to the previously reported high-frequency SC filters in CMOS.

Download or read book RF Power Amplifiers for Mobile Communications written by Patrick Reynaert and published by Springer Science & Business Media. This book was released on 2006-11-18 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book tackles both high efficiency and high linearity power amplifier (PA) design in low-voltage CMOS. With its emphasis on theory, design and implementation, the book offers a guide for those actively involved in the design of fully integrated CMOS wireless transceivers. Offering mathematical background, as well as intuitive insight, the book is essential reading for RF design engineers and researchers and is also suitable as a text book.

Download or read book Dynamic Characterisation of Analogue to Digital Converters written by Dominique Dallet and published by Springer Science & Business Media. This book was released on 2006-03-08 with total page 291 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Analogue-to-digital converter (ADC) is the most pervasive block in electronic systems. With the advent of powerful digital signal processing and digital communication techniques, ADCs are fast becoming critical components for system’s performance and flexibility. Knowing accurately all the parameters that characterise their dynamic behaviour is crucial, on one hand to select the most adequate ADC architecture and characteristics for each end application, and on the other hand, to understand how they affect performance bottlenecks in the signal processing chain. Dynamic Characterisation of Analogue-to-Digital Converters presents a state of the art overview of the methods and procedures employed for characterising ADCs’ dynamic performance behaviour using sinusoidal stimuli. The three classical methods – histogram, sine wave fitting, and spectral analysis – are thoroughly described, and new approaches are proposed to circumvent some of their limitations. This is a must-have compendium, which can be used by both academics and test professionals to understand the fundamental mathematics underlining the algorithms of ADC testing, and as an handbook to help the engineer in the most important and critical details for their implementation.

Download or read book Tradeoffs and Optimization in Analog CMOS Design written by David Binkley and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.