Download or read book Low Temperature Solid Phase Epitaxial Regrowth of Ion Implanted Boron in Silicon written by Chad Darrell Lindfors and published by . This book was released on 2003 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SPE solid phase Epitaxial Regrowth of Ion implanted Low pressure Chemically Vapor Deposited Polycrystalline Silicon Films written by Nhon Toai Quach and published by . This book was released on 1984 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Download or read book Ion Implantation and Activation written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2013-11-05 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.

Download or read book The Effects of Rapid Recrystallization and Ion Implanted Carbon on the Solid Phase Epitaxial Regrowth of Sisub 1 xGesub X Alloy Layers on Silicon written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.

Download or read book Growth and Segregation Kinetics During Thermal and Ion Beam Induced Epitaxial Crystallization of Amorphous Silicon written by Jonathan S. Custer and published by . This book was released on 1990 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy Research Abstracts written by and published by . This book was released on 1992 with total page 886 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation for Silicon Solar Cells written by Thomas James Ratcliff and published by . This book was released on 2015 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is investigated as a method for forming the heavily doped regions of silicon solar cells. Research is conducted with the aim of implementing ion implantation into the fabrication process of the Australian National University's interdigitated back contact and Sliver solar cell designs. High temperature annealing of boron and phosphorus implanted silicon is investigated, with an emphasis on thermal oxidation. The effect of annealing ambient on B implanted Si is studied, with an oxidising ambient shown to result in higher carrier recombination and lower dopant activation compared with annealing in an inert ambient. The effect of process temperature during inert annealing of B implanted Si is investigated. The impact of implantation damage for B implanted Si after high temperature annealing is quantified and used to identify the regimes of implantation damage by their impact on electron-hole recombination as a function of implantation fluence and sheet resistance. The defects present after annealing B implanted Si are studied and related to the observed trends in recombination. An oxidation recipe optimised to minimise recombination after B implantation is developed by minimising oxidation time and including a high temperature inert anneal prior to oxidation. The temperature dependence of P implanted Si during thermal oxidation is investigated for a range of implantation fluences. It is found samples that provided the samples is completely amorphised during implantation, annealing at 900 degrees Celsius is as effective as 1050 degrees Celsius. Studies of recombination and contact resistivity are used to design a P implanted point contact for an interdigitated back contact solar cell. Solid phase epitaxial regrowth is used to anneal P implanted Si at 600 degrees Celsius for 10 minutes. The enhancement in dielectric etch rate after implantation is used as a method to form self-aligned, localised doping and electrical contacts. Implanting dopant atoms through a dielectric layer locally enhances the etch rate relative to non-implanted regions of the same dielectric. Chemical etching selectively exposes on the regions doped by implantation while passivation is preserved in the surround dielectric. Laser processing is investigated as a low thermal budget technique to anneal implanted Si. Laser doping from a dielectric layer implanted with dopant atoms is presented as a method for forming self-aligned doping and contacts. This method was demonstrated using a dielectric stack of silicon oxide and silicon nitride implanted with P and an a-Si passivation layer implanted with B. Ion implantation is used to fabricate interdigitated back contact and Sliver solar cells, achieving significant process simplification compared with reference fabrication processes. The fabrication process for each cell type is reduced to a single high temperature step only. For Sliver cells, conversion efficiency of 16% is achieved and efficiency greater than 22% is demonstrated for interdigitated back contact cells, where implantation does not limit the cell performance.

Download or read book Silicon Processing and Characterization with Ion Beams microform written by Mengbing Huang and published by National Library of Canada = Bibliothèque nationale du Canada. This book was released on 1997 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous shrinkage of silicon devices is presenting challenges to ion beam processing and characterization of Si materials. In this thesis, we have studied some issues related to ion beam analysis and processing of silicon materials. First, we demonstrate the use of nuclear reaction analysis (NRA) combined with oxidation/etching to obtain the boron depth profile in a $\delta$-doped Si structure. Our measurements show very sharp interfaces between doped and undoped layers, with the attainable depth resolution of $\sim$0.7 nm. The technique is further applied to examine the B redistribution in the $\delta$-doped Si structure after solid phase epitaxial growth. Second, we study the effects of temperature and flux on the lattice damage induced by 1.0 MeV Si ion self-implantation. The decreasing rate of near-surface damage with implant temperature is distinctly different from that of end-of-range damage, suggesting that different mechanisms for damage formation are involved along the ion track. The flux effect on lattice damage is found to vary with temperature. Finally, we study boron transient enhanced diffusion (TED) under P and B isotope doping conditions. The effective boron diffusivity and the immobile boron density decrease with increasing P doping concentrations. This is consistent with the clustering model and suggests that the occurrence of TED for low boron concentration cannot be explained by the Fermi-level model. Compared to $\sp$B-free Si, $\sp$B TED in the $\sp$B-doped Si is retarded after the initial low-temperature annealing, while more broadening of the $\sp$B profile occurs in the $\sp$B-doped sample after a second annealing at high temperature. This phenomenon is discussed in terms of trapping of Si interstitials in $\sp$B doping background. This study also provides a means for testing the "+1" model which is important for TED modeling.

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Download or read book Reduced Thermal Processing for ULSI written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.

Download or read book Ion Implantation Technology written by Edmund G. Seebauer and published by American Institute of Physics. This book was released on 2008-12-11 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference is focused on recent advances and emerging technologies in semiconductor processing before, during and after ion implantation. The content encompasses fundamental physical understanding, common and novel applications as well as equipment issues, maintenance and design. The primary audience is process engineers in the microelectronics industry. Additional contributions come from academia and other industry segments (automotive, aerospace, and medical device manufacturing).

Download or read book Polycrystalline Silicon for Integrated Circuit Applications written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.

Download or read book Strain Relaxation and Solid Phase Epitaxial Regrowth in Ion Implanted Strained Silicon and Strained Silicon Germanium written by Michelle S. Phen and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In tension, regrowth related defects were nucleated as the amorphous-crystalline front advanced to the surface. Once regrowth was complete, the regrowth related defects propagated down to the strained interface and formed stacking faults which promoted further relaxation. In compression, the advancing amorphous-crystalline front roughened and nucleated an extended dislocation network. The density of these dislocations were stable and did not depend on temperature or duration of anneals. The results from this study conclude that the SPER process can be achieved without strain loss or defect nucleation for moderate strain values in tension. However, in compression all strain levels in this study nucleated defects and exhibited strain relaxation.