Download or read book Localized Electronic Behavior of Large Bandgap Semiconductor Systems written by James Christopher Moore and published by . This book was released on 2007 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Next Generation Integrated Behavioral and Physics based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics written by Michael Robert Hontz and published by . This book was released on 2019 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation investigates the modeling of next generation wide bandgap semiconductors in several domains. The first model developed is of a GaN Schottky diode with a unique AlGaN cap layer. This model is developed using fundamental physical laws and analysis and allows for the characteristics of the diode to be designed by adjusting aspects of the diode's fabrication and structure. The second model is of a lateral GaN HEMT and is developed using TCAD simulation software in order to fit experimental data based on static characteristics. This procedure endeavors to simultaneously fit several output characteristics of the HEMT device to facilitate the applicability and evaluation of the device for power electronics applications. This model is then used to analyze the effects of various substrate material choices on the performance of the GaN HEMT in a switching application. Finally, a link between TCAD models of devices and a circuit simulation platform is demonstrated. This system allows for simulation and testing of devices in complex power electronic systems while maintaining a direct dependence between the system-level performance and the physical parameters of the device. This link between TCAD and circuit simulation is then used to develop an iterative optimization procedure to design a semiconductor device for a particular power electronic application. The work demonstrated here develops procedures to create high-fidelity models of wide bandgap semiconductor devices and enables the purposeful design of devices for their intended application with a high degree of confidence in meeting system requirements. It is through this focusing of device modeling and design, that the rate of technological transfer of next-generation semiconductor devices to power electronics systems can be improved.
Download or read book Wide Bandgap Semiconductor Materials and Devices 20 written by S. Jang and published by The Electrochemical Society. This book was released on 2019-05-17 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes papers based on presentations from the symposium "Wide Bandgap Semiconductor Materials and Devices 20," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003-07-14 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge.
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Download or read book Electron and Photon Confinement in Semiconductor Nanostructures written by Benoît Deveaud and published by IOS Press. This book was released on 2003 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this course was to give an overview of the physics of artificial semiconductor structures confining electrons and photons. It furnishes the background for several applications in particular in the domain of optical devices, lasers, light emitting diodes or photonic crystals. The effects related to the microactivity polaritons, which are mixed electromagnetic radiation-exciton states inside a semiconconductor microactivity are covered. The study of the characteristics of such states shows strong relations with the domain of cavity quantum electrodynamics and thus with the investigation of some fundamental theoretical concepts.
Download or read book Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1995 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by . This book was released on 2017 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Download or read book Wide bandgap Semiconductors for Next generation Power Electronics Systems written by Grayson Zulauf and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-bandgap power semiconductors promise to reshape the power electronics landscape, opening completely new use cases and increasing efficiency and power density in existing ones. Most notably, gallium nitride (GaN) and silicon carbide (SiC) were successfully commercialized in the past decades, with theoretical benefits over silicon of multiple orders-of-magnitude. When combined with soft-switching techniques and topologies, these wide-bandgap materials have the potential to move power conversion to MHz operating frequencies, radically shrinking power converters and enabling new fabrication methods with the frequency-driven reduction of passive component requirements. Unfortunately, soft-switched converters built at MHz frequencies have consistently underperformed their modeled efficiency, as this work shows for three DC-RF inverters at high- and very-high-frequency. These inverters have measured semiconductor losses nearly an order-of-magnitude greater than expected from manufacturer-provided simulation models, a discrepancy that demands investigation. These losses are attributed to the process of resonantly charging and discharging the output capacitance (Coss) of the power semiconductors, a loss mechanism termed "soft-switching losses" or "Coss losses." Our measurements constitute the first recognition of this problem in GaN HEMTs, and these initial measurements are then extended to SiC and Si MOSFETs, finding dependencies and scaling laws for each device class. To complete the understanding of losses at high-frequencies, the well-understood phenomenon in GaN HEMTs of dynamic on-resistance is then revisited. Our work conclusively shows that dynamic on-resistance cannot be accurately characterized using the standardized double-pulse-test, and uses the underlying physics to determine the parameters that must be controlled for accurate reporting. Using this measurement framework, this work extends the dynamic on-resistance measurements to MHz frequencies for the first time, finding that the majority of the dynamic effects in soft-switched converters occur below 1 MHz for the tested device. With both off-state and on-state losses precisely understood at MHz frequencies, the promise of high-frequency power conversion can finally be realized. While adopted widely in cell phones, inductive wireless power transfer for higher-value applications (e.g. electric vehicles) is beset by both low performance and high cost due to the limitations of litz wire. At 6.78 MHz, the first international industrial, scientific, and medical (ISM) band above 200 kHz, litz wire can be completely eliminated, paving the way to low cost, small, light, and high-performance systems. A 1 kW DC-DC converter that transfers power across a 2 cm gap with 6.6 cm diameter coils at over 95% efficiency is demonstrated, a new benchmark in power density and efficiency for MHz-frequency wireless power transfer. This performance would, plainly, not have been possible without the identification and quantification of Coss losses. Our future power, transportation, and computing infrastructures are dependent on the implementation of wide-bandgap power semiconductors to reduce size, weight, and cost while increasing efficiency to address the climate challenge. This thesis is our small contribution to meaningfully improving these semiconductors and showing what's possible for the next generation of power conversion.
Download or read book Progress in Inorganic Chemistry Volume 35 written by Stephen J. Lippard and published by John Wiley & Sons. This book was released on 2009-09-17 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive series of volumes on inorganic chemistry provides inorganic chemists with a forum for critical, authoritative evaluations of advances in every area of the discipline. Every volume reports recent progress with a significant, up-to-date selection of papers by internationally recognized researchers, complemented by detailed discussions and complete documentation. Each volume features a complete subject index and the series includes a cumulative index as well.
Download or read book Conducting Polymers written by György Inzelt and published by Springer Science & Business Media. This book was released on 2012-03-23 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition of a well-received volume has been thoroughly updated and expanded to cover the most recent developments. Coverage now includes additional polymers such as polyindole and polyazines, composites of polymers with carbon nanotubes, metals, and metal oxides, as well as bending-beam techniques for characterization. Again, the author provides a systematic survey of the knowledge accumulated in this field in the last thirty years. This includes thermodynamic aspects, the theory of the mechanism of charge transport processes, the chemical and physical properties of these compounds, the techniques of characterization, the chemical and electrochemical methods of synthesis as well as the application of these systems. The book contains a compilation of the polymers prepared so far and covers the relevant literature with almost 2000 references. From reviews of the previous edition ‘a comprehensive reference guide for those interested in this field’ (Journal of Solid State Electrochemistry)
Download or read book State of the Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Structure Calculations for Solids and Molecules written by Jorge Kohanoff and published by Cambridge University Press. This book was released on 2006-06-29 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic structure problems are studied in condensed matter physics and theoretical chemistry to provide important insights into the properties of matter. This 2006 graduate textbook describes the main theoretical approaches and computational techniques, from the simplest approximations to the most sophisticated methods. It starts with a detailed description of the various theoretical approaches to calculating the electronic structure of solids and molecules, including density-functional theory and chemical methods based on Hartree-Fock theory. The basic approximations are thoroughly discussed, and an in-depth overview of recent advances and alternative approaches in DFT is given. The second part discusses the different practical methods used to solve the electronic structure problem computationally, for both DFT and Hartree-Fock approaches. Adopting a unique and open approach, this textbook is aimed at graduate students in physics and chemistry, and is intended to improve communication between these communities. It also serves as a reference for researchers entering the field.
Download or read book Optic and Electronic Properties of Large Band Gap Semiconductors Doped by Ion Implantation written by Wolfgang J. Choyke and published by . This book was released on 1974 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt: Various ions were implanted in SiC, and the photoluminescence was examined after the samples were annealed. Two luminescence spectra that were independent of the implanted ion persisted to the highest annealing temperature of 1700C. One, called D1, was attributed to di-vacancies. The other, called D2, was attributed to di-interstitials because of the number and intensity of high-energy localized modes in the spectrum. Unlike these pure defects, some sample-dependent defects were produced by electron bombardment, and were attributed to impurity-defect pairs. Severe lattice damage was absent in samples implanted with the light atoms H and D, which produced strong new spectra. The observation of C-H and C-D vibrational modes led to a model of the center that was confirmed by extensive magneto-optical measurements. Two charge states of the center were observed in luminescence. The center was produced by H- or D-implantation in polytypes 4H, 6H and 15R, but not in 3C. (Modified author abstract).
Download or read book Computational Systems Natural and Artificial written by Hermann Haken and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the invited papers presented at an international sympo sium held at Schloss Elmau, Bavaria (FRG), May 4-9, 1987. Leading experts from neurobiology, medicine, physics, and the computer sciences joined to gether to present and discuss their most recent results. A particular example of the natural computational systems discussed is the visual system of man and animals. A bridge between neural networks and physical systems is provided by spin glass models of neural networks, which were also treated. Concrete realizations of new kinds of devices in microelectronics were among the further topics, as were general problems on the calculation of chaotic orbits. In this way these proceedings present a number of quite recent ap proaches to problems which are of great current interest in fields concerned with computational systems. Bringing together scientists from neurobiology, physics, and the computer sciences has been one of the main aims of the synergetics enterprise, and in particular of its international symposia, from the very beginning. For exam ple, its first meeting held in 1972 at Schloss Elmau included, among others, papers by R. Landauer and J. W. F. Woo on cooperative phenomena in data processing, by W. Reichardt on mechanisms of pattern recognition by the visual system of insects, by B. Julesz on stereoscopic depth perception, and by H. R. Wilson on cooperative phenomena in a homogeneous cortical tissue model. Whole meetings and the corresponding proceedings were devoted to these problems, e. g.
