Download or read book Junction Formation and Poly Si Doping for Scaled Sub micron CMOS Technology written by C. M. Osburn and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Introduction to Microfabrication written by Sami Franssila and published by John Wiley & Sons. This book was released on 2005-01-28 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microfabrication is the key technology behind integrated circuits,microsensors, photonic crystals, ink jet printers, solar cells andflat panel displays. Microsystems can be complex, but the basicmicrostructures and processes of microfabrication are fairlysimple. Introduction to Microfabrication shows how the commonmicrofabrication concepts can be applied over and over again tocreate devices with a wide variety of structures andfunctions. Featuring: * A comprehensive presentation of basic fabrication processes * An emphasis on materials and microstructures, rather than devicephysics * In-depth discussion on process integration showing how processes,materials and devices interact * A wealth of examples of both conceptual and real devices Introduction to Microfabrication includes 250 homework problems forstudents to familiarise themselves with micro-scale materials,dimensions, measurements, costs and scaling trends. Both researchand manufacturing topics are covered, with an emphasis on silicon,which is the workhorse of microfabrication. This book will serve as an excellent first text for electricalengineers, chemists, physicists and materials scientists who wishto learn about microstructures and microfabrication techniques,whether in MEMS, microelectronics or emerging applications.
Download or read book Advanced Gate Stack Source drain and Channel Engineering for Si based CMOS 2 written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2006 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Download or read book BiCMOS Technology and Applications written by Antonio R. Alvarez and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Download or read book Advanced CMOS Process Technology written by J Pimbley and published by Elsevier. This book was released on 2012-12-02 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.
Download or read book ULSI Science and Technology 1991 written by John M. Andrews and published by . This book was released on 1991 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solid State Microelectronics Technology written by Sunipa Roy and published by Bentham Science Publishers. This book was released on 2023-06-30 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solid State & Microelectronics Technology is a comprehensive textbook designed for courses in solid state device physics as part of electronics / electrical engineering and IT courses. The book has two main objectives aimed at students and the future engineer: 1) to deliver knowledge of quantum physics and 2) to familiarize them with modern device types and fabrication processes. The breadth of subjects covered in the book serves a useful integrative function in combining fundamental science with applications. Recent developments are illustrated thoughtfully to encourage the reader to adopt this field as their research area. Key features - Adopts a twin approach to learning about solid state devices by blending information about fundamental science with the latest fabrication technology - Covers topics recently introduced into current curricula to cater to the demands of modern engineering - Provides foundational information on quantum physics, semiconductors and electronics - Provides details about advanced devices such as BiCMOS, MESFET and FinFet devices - Encourages readers to pursue further research with detailed illustrations and references
Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
Download or read book Formation of N P Junctions Using In situ Phosphorus Doped Selective Si1 xGex Alloys for CMOS Technology Nodes Beyond 50nm written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS integrated circuits are scaled beyond the 50nm regime, conventional source/drain junction and contact technologies can no longer satisfy the requirements of MOSFETs, which require super-abrupt doping profiles and extremely low contact resistivities. To address these challenges, selective Si1-xGex source/drain technology was proposed by this laboratory. In this approach, in-situ doped Si1-xGex layers are selectively deposited in recessed source/drain regions. Since the dopants occupy substitutional sites during epitaxial growth, high temperature annealing is not required for dopant activation, which eliminates diffusion and provides abrupt doping profiles. Furthermore, smaller bandgap of Si1-xGex reduces the metal-semiconductor barrier height, an essential requirement for achieving a substantial reduction in contact resistivity. This thesis focuses on selective rapid thermal chemical vapor deposition of in-situ phosphorus doped Si1-xGex alloys intended for this application. Experiments were carried out to study electrical properties of the in-situ doped layers with emphasis on maximizing the active carrier concentration. Active phosphorus levels in the range of 2 -- 5 x 1020 cm-3 were obtained. The deposited layers were used to fabricate pn junctions with excellent reverse leakage characteristics. Junctions fabricated on lightly doped substrates exhibited behavior equivalent to best junctions in spite of the lattice mismatch between the Si substrate and the phosphorus doped Si1-xGex. Junctions fabricated on heavily doped substrates suffered from band to band tunneling, which is expected regardless of the junction formation technique. Deposition selectivity of the process was studied and determined that high flows of PH3 could degrade the selectivity. An alternative deposition process based on alternating periods of deposition and etching was developed, which provided substantial improvements in deposition selectivity.
Download or read book Symposium on Ion Implantation and Submicron Fabrication proceedings written by and published by . This book was released on 1984 with total page 1346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Frontiers In Electronics With Cd rom Proceedings Of The Wofe 04 written by Michael S Shur and published by World Scientific. This book was released on 2006-08-10 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1992 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Metals Abstracts written by and published by . This book was released on 1992 with total page 1796 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:
