Download or read book Ire Bonding in Microelectronics written by George G. Harman and published by McGraw Hill Professional. This book was released on 1997 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of this work is considered a classic reference in the field. This new edition updates the entire work and adds 100 pages of information covering new materials and techniques such as fine pitch

Download or read book Reliability and Yield Problems of Wire Bonding in Microelectronics written by George G. Harman and published by International Society of Hybrid. This book was released on 1989-01-01 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microelectronic Ultrasonic Bonding written by George G. Harman and published by . This book was released on 1974 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Wafer Bonding written by Peter Ramm and published by John Wiley & Sons. This book was released on 2012-02-13 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus behind this book on wafer bonding is the fast paced changes in the research and development in three-dimensional (3D) integration, temporary bonding and micro-electro-mechanical systems (MEMS) with new functional layers. Written by authors and edited by a team from microsystems companies and industry-near research organizations, this handbook and reference presents dependable, first-hand information on bonding technologies. Part I sorts the wafer bonding technologies into four categories: Adhesive and Anodic Bonding; Direct Wafer Bonding; Metal Bonding; and Hybrid Metal/Dielectric Bonding. Part II summarizes the key wafer bonding applications developed recently, that is, 3D integration, MEMS, and temporary bonding, to give readers a taste of the significant applications of wafer bonding technologies. This book is aimed at materials scientists, semiconductor physicists, the semiconductor industry, IT engineers, electrical engineers, and libraries.

Download or read book Semiconductor Wafer Bonding 9 Science Technology and Applications written by Helmut Baumgart and published by The Electrochemical Society. This book was released on 2006 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions covers state-of-the-art R&D results of the last 1.5 years in the field of semiconductor wafer bonding technology. Wafer Bonding Technology can be used to create novel composite materials systems and devices what would otherwise be unattainable. Wafer bonding today is rapidly expanding applications in such diverse fields as photonics, sensors, MEMS, X-ray optics, non-electronic microstructures, high performance CMOS platforms for high end servers, Si-Ge, strained SOI, Germanium-on-Insulator (GeOI), and Nanotechnologies.

Download or read book Wire bond Electrical Connections written by Harry A. Schafft and published by . This book was released on 1972 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Wafer Bonding VII Science Technology and Applications written by and published by The Electrochemical Society. This book was released on 2003 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mechanical and Tribological Aspects of Microelectronic Wire Bonding written by Aashish Satish Shah and published by . This book was released on 2010 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this thesis is on improving the understanding of mechanical and tribological mechanisms in microelectronic wire bonding. In particular, it focusses on the development and application of quantitative models of ultrasonic (US) friction and interfacial wear in wire bonding. Another objective of the thesis is to develop a low-stress Cu ball bonding process that minimizes damage to the microchip. These are accomplished through experimental measurements of in situ US tangential force by piezoresistive microsensors integrated next to the bonding zone using standard complementary metal oxide semiconductor (CMOS) technology. The processes investigated are thermosonic (TS) Au ball bonding on Al pads (Au-Al process), TS Cu ball bonding on Al pads (Cu-Al process), and US Al wedge-wedge bonding on Al pads (Al-Al process). TS ball bonding processes are optimized with one Au and two Cu wire types, obtaining average shear strength (SS) of more than 120 MPa. Ball bonds made with Cu wire show at least 15% higher SS than those made with Au wire. However, 30% higher US force induced to the bonding pad is measured for the Cu process using the microsensor, which increases the risk of underpad damage. The US force can be reduced by: (i) using a Cu wire type that produces softer deformed ball results in a measured US force reduction of 5%; and (ii) reducing the US level to 0.9 times the conventionally optimized level, the US force can be reduced by 9%. It is shown that using a softer Cu deformed ball and a reduced US level reduces the extra stress observed with Cu wire compared to Au wire by 42%. To study the combined effect of bond force (BF) and US in Cu ball bonding, the US parameter is optimized for eight levels of BF. For ball bonds made with conventionally optimized BF and US settings, the SS is [dsim] 140 MPa. The amount of Al pad splash extruding out of bonded ball interface (for conventionally optimized BF and US settings) is between 10-12 [mu]m. It can be reduced to 3-7 [mu]m if accepting a SS reduction to 50-70 MPa. For excessive US settings, elliptical shaped Cu bonded balls are observed, with the major axis perpendicular to the US direction. By using a lower value of BF combined with a reduced US level, the US force can be reduced by 30% while achieving an average SS of at least 120 MPa. These process settings also aid in reducing the amount of splash by 4.3 [mu]m. The US force measurement is like a signature of the bond as it allows for detailed insight into the tribological mechanisms during the bonding process. The relative amount of the third harmonic of US force in the Cu-Al process is found to be five times smaller than in the Au-Al process. In contrast, in the Al-Al process, a large second harmonic content is observed, describing a non-symmetric deviation of the force signal waveform from the sinusoidal shape. This deviation might be due to the reduced geometrical symmetry of the wedge tool. The analysis of harmonics of the US force indicates that although slightly different from each other, stick-slip friction is an important mechanism in all these wire bonding variants. A friction power theory is used to derive the US friction power during Au-Al, Cu-Al, and Al-Al processes. Auxiliary measurements include the current delivered to the US transducer, the vibration amplitude of the bonding tool tip in free-air, and the US tangential force acting on the bonding pad. For bonds made with typical process parameters, several characteristic values used in the friction power model such as the ultrasonic compliance of the bonding system and the profile of the relative interfacial sliding amplitude are determined. The maximum interfacial friction power during Al-Al process is at least 11.5 mW (3.9 W/mm2), which is only about 4.8% of the total electrical power delivered to the US transducer. The total sliding friction energy delivered to the Al-Al wedge bond is 60.4 mJ (20.4 J/mm2). For the Au-Al and Cu-Al processes, the US friction power is derived with an improved, more accurate method to derive the US compliance. The method uses a multi-step bonding process. In the first two steps, the US current is set to levels that are low enough to prevent sliding. Sliding and bonding take place during the third step, when the current is ramped up to the optimum value. The US compliance values are derived from the first two steps. The average maximum interfacial friction power is 10.3 mW (10.8 W/mm2) and 16.9 mW (18.7 W/mm2) for the Au-Al and Cu-Al processes, respectively. The total sliding friction energy delivered to the bond is 48.5 mJ (50.3 J/mm2) and 49.4 mJ (54.8 J/mm2) for the Au-Al and Cu-Al processes, respectively. Finally, the sliding wear theory is used to derive the amount of interfacial wear during Au-Al and Cu-Al processes. The method uses the US force and the derived interfacial sliding amplitude as the main inputs. The estimated total average depth of interfacial wear in Au-Al and Cu-Al processes is 416 nm and 895 nm, respectively. However, the error of estimation of wear in both the Au-Al and the Cu-Al processes is [dsim] 50%, making this method less accurate than the friction power and energy results. Given the error in the determination of compliance in the Al-Al process, the error in the estimation of wear in the Al-Al process might have been even larger; hence the wear results pertaining to the Al-Al process are not discussed in this study.

Download or read book Semiconductor Wafer Bonding 10 Science Technology and Applications written by and published by The Electrochemical Society. This book was released on 2008-10 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions on Semiconductor Wafer Bonding will cover the state-of-the-art R&D results of the last 2 years in the field of semiconductor wafer bonding technology. Wafer Bonding is an Enabling Technology that can be used to create novel composite materials systems and devices that would otherwise be unattainable. Wafer Bonding today is rapidly expanding into new applications in such diverse fields as photonics, sensors, MEMS. X-ray optics, non-electronic microstructures, high performance CMOS platforms for high end servers, Si-Ge, strained SOI, Germanium-on-Insulator (GeOI) and Nanotechnologies.

Download or read book Microelectronic Interconnection Bonding with Ribbon Wire written by H. K. Kessler and published by . This book was released on 1973 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: The feasibility of using aluminum ribbon wire for ultrasonic bonding of semiconductor microelectronic interconnections was studied, and several advantages over the use of round wire of equivalent cross-sectional area were found. Ribbon wire bonds exhibited little deformation or heel damage, and a greater percentage of bonds of a certain quality (as judged by pull strength and appearance) could be made over much greater ranges of the bonding machine parameters, time and tool tip displacement, using ribbon wire than was possible with round wire. The ease of positioning ribbon wire was indicated by making multiple ribbon wire bonds side-by-side on a 5-mil square pad, or by stacking up to four bonds one on top of another. However, bonding with harder than normal wire, previously thought to offer certain advantages with respect to higher bond tensile strength, yielded inconsistent results.

Download or read book Reliability and Quality in Microelectronic Manufacturing written by A. Christou and published by RIAC. This book was released on 2006 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microelectronic Interconnection Bonding With Ribbon Wire Classic Reprint written by H. K. Kessler and published by Forgotten Books. This book was released on 2018-02-10 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excerpt from Microelectronic Interconnection Bonding With Ribbon Wire The feasibility of using aluminum ribbon wire for ultrasonic bonding of semiconductor microelectronic interconnections was studied, and several advantages over the use of round wire of equivalent cross-sectional area were found. Ribbon wire bonds exhibited little deformation or heel damage, and a greater percentage of bonds of a certain quality (as judged by pull strength and appearance) could be made over much greater ranges of the bonding machine parameters, time and tool tip displacement, using ribbon wire than was possible with round wire. The ease of positioning ribbon wire was indicated by making multiple ribbon wire bonds side - by side on a 5-mi1 squareAbout the Publisher Forgotten Books publishes hundreds of thousands of rare and classic books. Find more at www.forgottenbooks.com This book is a reproduction of an important historical work. Forgotten Books uses state-of-the-art technology to digitally reconstruct the work, preserving the original format whilst repairing imperfections present in the aged copy. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in our edition. We do, however, repair the vast majority of imperfections successfully; any imperfections that remain are intentionally left to preserve the state of such historical works.

Download or read book Bonding in Microsystem Technology written by Jan A. Dziuban and published by Springer Science & Business Media. This book was released on 2007-01-30 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first compendium on silicon/glass microsystems made by deep wet etching and the first book with a detailed description of bonding techniques used in microsystem technology. Technological results presented in the book have been tested experimentally by the author and his team, and can be utilized in day-to-day laboratory practice. Special attention has been paid to the highest level of accessibility of the book by students.

Download or read book NBS Technical Note written by and published by . This book was released on 1972 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Science and Technology of Semiconductor On Insulator Structures and Devices Operating in a Harsh Environment written by Denis Flandre and published by Springer Science & Business Media. This book was released on 2006-05-06 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

Download or read book Microelectronic Interconnections and Assembly written by George G. Harman and published by Springer Science & Business Media. This book was released on 1998 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contains 28 presentations and three abstracts from the May 1996 workshop, which was devoted to the technical aspects of advanced interconnections and micro-assembly, but also included papers on the education issues required to prepare students to work in these areas. Several papers predict the future directions of packaging and interconnection. Other papers discuss wire bonding and Tape Automated Bonding (TAB). In addition, the solder metallurgy as well as the production technology of flip chip interconnections are described. Multichip Module and thick-film hybrid substrate interconnections are also covered. Annotation copyrighted by Book News, Inc., Portland, OR

Download or read book Proceedings of the Third International Symposium on Semiconductor Wafer Bonding written by C. E. Hunt and published by . This book was released on 1995 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: