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Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1977 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1977-03 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings written by and published by . This book was released on 1998 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1977 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1997 with total page 1462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
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Download or read book Bibliography of Scientific and Industrial Reports written by and published by . This book was released on 1969 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
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