Download or read book Molecular Dynamics Studies of the Ion Beam Induced Crystallization in Silicon written by and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Beam Induced Crystallization in Silicon written by Jan Linnros and published by . This book was released on 1985 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion beam induced Epitaxal Crystallization and Amorphization in Silicon written by and published by . This book was released on 1990 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion beam induced Epitaxial Crystallization and Amorphization in Silicon written by Francesco Priolo and published by . This book was released on 1990 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Segregation Kinetics During Thermal and Ion Beam Induced Epitaxial Crystallization of Amorphous Silicon written by Jonathan S. Custer and published by . This book was released on 1990 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Beam Induced Damage Processes in Silicon written by Richard David Goldberg and published by . This book was released on 1995 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Beam Interactions with Matter written by John Michael Glasko and published by . This book was released on 1993 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Materials Science with Ion Beams written by Harry Bernas and published by Springer Science & Business Media. This book was released on 2009-10-03 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials science is the prime example of an interdisciplinary science. It - compasses the ?elds of physics, chemistry, material science, electrical en- neering, chemical engineering and other disciplines. Success has been o- standing. World-class accomplishments in materials have been recognized by NobelprizesinPhysicsandChemistryandgivenrisetoentirelynewtechno- gies. Materials science advances have underpinned the technology revolution that has driven societal changes for the last ?fty years. Obviouslytheendisnotinsight!Futuretechnology-basedproblemsd- inatethecurrentscene.Highonthelistarecontrolandconservationofenergy and environment, water purity and availability, and propagating the inf- mation revolution. All fall in the technology domain. In every case proposed solutions begin with new forms of materials, materials processing or new arti?cial material structures. Scientists seek new forms of photovoltaics with greater e?ciency and lower cost. Water purity may be solved through surface control, which promises new desalination processes at lower energy and lower cost. Revolutionary concepts to extend the information revolution reside in controlling the “spin” of electrons or enabling quantum states as in quantum computing. Ion-beam experts make substantial contributions to all of these burgeoning sciences.

Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.

Download or read book Megaelectron Volt Ion Beam Induced Epitaxy of Deposited Silicon and Germanium silicon Alloys on 100 Silicon Substrates written by Anthony J. Yu and published by . This book was released on 1989 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Metal Induced Crystallization written by Zumin Wang and published by CRC Press. This book was released on 2015-01-28 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline semiconductors in the form of thin films are crucial materials for many modern, advanced technologies in fields such as microelectronics, optoelectronics, display technology, and photovoltaic technology. Crystalline semiconductors can be produced at surprisingly low temperatures (as low as 120C) by crystallization of amorphous semicon

Download or read book Laser Crystallization of Silicon Fundamentals to Devices written by Norbert H. Nickel and published by Academic Press. This book was released on 2003-12-12 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on the Laser Crystallization of Silicon reviews the latest experimental and theoretical studies in the field. It has been written by recognised global authorities and covers the most recent phenomena related to the laser crystallization process and the properties of the resulting polycrystalline silicon. Reflecting the truly interdisciplinary nature of the field that the series covers, this volume will continue to be of great interest to physicists, chemists, materials scientists and device engineers in modern industry. - Valuable applications for industry, particularly in the fabrication of thin-film electronics - Each chapter has been peer reviewed - An important and timely contribution to the semiconductor literature

Download or read book Studies on Ion Beam Induced Damage Accumulation and Crystal Recovery by Solid Phase Epitaxy in Silicon written by Brett Cameron Johnson and published by . This book was released on 2003 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Direct Simulation of Ion Beam Induced Stressing and Amorphization of Silicon written by and published by . This book was released on 1999 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using molecular dynamics (MD) simulation, the authors investigate the mechanical response of silicon to high dose ion-irradiation. The authors employ a realistic model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. The authors find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, the authors observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. The authors note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between the different densities of the amorphous samples. For any reasonable deformation rate, the authors observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in a denser structure relative to crystalline Si. The authors conclude that although there is substantial agreement between experimental measurements and simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally the authors show that annealing simulations of their amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in a-Si are analogous to those in c-Si.

Download or read book Electron beam Crystallization of Silicon Germanium and Cadmium Sulfide written by John C. Evans (Jr.) and published by . This book was released on 1968 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photon Beam and Plasma Assisted Processing written by E.F. Krimmel and published by Elsevier. This book was released on 1989-02-01 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: This symposium attracted 82 papers which were presented orally or as posters. Fourteen invited speakers presented state of the art reviews and aspects of future key topics in this increasingly important area of materials science. The high level of scientific presentation during the conference enhanced the aim of the symposium, which was to stimulate discussion amongst materials scientists, chemists, engineers and physicists with a common interest in this field and to disseminate knowledge of progress.

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination