Download or read book Investigation of Polycrystalline Thin film CuInSe sub 2 Solar Cells Based on ZnSe and ZnO Buffer Layers Final Report February 16 1992 November 15 1995 written by and published by . This book was released on 1996 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt: The major objective of this program was to determine the potential of ZnSe and ZnO buffer layers in solar cells based on CuInSe2 and related alloys. Experimental studies were carried out with CIS and CIGSS substrates. ZnSe films were deposited by a CVD process which involved the reaction of a zinc adduct and H2Se. Al/ZnSe/CIS test cells were used for process development. Test cell performance aided in determining the optimum thickness for ZnSe buffer layers to be in the range of 150 +!to 200 +!for Siemens CIS material, and between 80 +!and 120 +!for the graded absorber material. If the buffer layers exceeded these values significantly, the short-circuit current would be reduced to zero. The best efficiency achieved for a ZnSe/CIS cell was an active area value of 9.2%. In general, deposition of a conductive ZnO film on top of a ZnSe/CIS structure resulted in either shunted or inflected I-V characteristics. Two approaches were investigated for depositing ZnO buffer layers, namely, chemical bath deposition and CVD. CVD ZnO buffer layers are grown by reacting a zinc adduct with tetrahydrofuran. Best results were obtained for ZnO buffer layers grown with a substrate temperature ca. 225--250 C. These studies concentrated on Siemens graded absorber material (CIGSS). ZnO/CIS solar cells have been fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and an Al/Ag collector grid. Several cells were fabricated with an area of 0.44 cm2 that have total area efficiencies greater than 11%. To date, the best performing ZnO/CIS cell had a total area efficiency of 11.3%. In general, the authors find that ZnO buffer layers should have a resistivity> 1,000 ohm-cm and have a thickness from 200 +!to 600 +! CIS cells studies with ZnO buffer layers grown by CBD also show promise. Finally, simulation studies were carried out using the 1-D code, PC-1D.
Download or read book Investigation of Polycrystalline Thin film CuInSe2 Solar Cells Based on ZnSe and ZnO Buffer Layers Final Report February 16 1992 November 15 1995 written by and published by . This book was released on 1996 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt: The major objective of this program was to determine the potential of ZnSe and ZnO buffer layers in solar cells based on CuInSe2 and related alloys. Experimental studies were carried out with CIS and CIGSS substrates. ZnSe films were deposited by a CVD process which involved the reaction of a zinc adduct and H2Se. Al/ZnSe/CIS test cells were used for process development. Test cell performance aided in determining the optimum thickness for ZnSe buffer layers to be in the range of 150 Å to 200 Å for Siemens CIS material, and between 80 Å and 120 Å for the graded absorber material. If the buffer layers exceeded these values significantly, the short-circuit current would be reduced to zero. The best efficiency achieved for a ZnSe/CIS cell was an active area value of 9.2%. In general, deposition of a conductive ZnO film on top of a ZnSe/CIS structure resulted in either shunted or inflected I-V characteristics. Two approaches were investigated for depositing ZnO buffer layers, namely, chemical bath deposition and CVD. CVD ZnO buffer layers are grown by reacting a zinc adduct with tetrahydrofuran. Best results were obtained for ZnO buffer layers grown with a substrate temperature ca. 225--250 C. These studies concentrated on Siemens graded absorber material (CIGSS). ZnO/CIS solar cells have been fabricated by first depositing a ZnO buffer layer, followed by deposition of a low resistivity ZnO top contact layer and an Al/Ag collector grid. Several cells were fabricated with an area of 0.44 cm2 that have total area efficiencies greater than 11%. To date, the best performing ZnO/CIS cell had a total area efficiency of 11.3%. In general, the authors find that ZnO buffer layers should have a resistivity> 1,000 ohm-cm and have a thickness from 200 Å to 600 Å. CIS cells studies with ZnO buffer layers grown by CBD also show promise. Finally, simulation studies were carried out using the 1-D code, PC-1D.
Download or read book Investigation of Polycrystalline Thin film CuInSe2 Solar Cells Based on ZnSe and ZnO Buffer Layers written by Larry Carrol Olsen and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The major objective was to determine the potential of ZnSe and ZnO buffer layers in solar cells based on CuInSe2 (CIS) and related alloys. Experimental studies were carried out with CIS and CuInGaSSe2 (CIGSS) substrates provided by Siemens Solar.
Download or read book Investigation of Polycrystalline Thin Film CuInSe2 Solar Cells Based on ZnSe Windows Annual Subcontract Report 15 February 1993 14 February 1994 written by and published by . This book was released on 1995 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report concerns studies of CIS solar cells based on ZnSe window layers. ZnSe/CIS devices are fabricated by growing ZnSe films by MOCVD onto Siemens CIS and graded absorber substrates. ZnSe films are grown by reacting H2Se with a zinc adduct. ZnSe/CIS heterojunctions have been studied by depositing transparent aluminum contacts onto ZnSe. These studies indicate that ZnSe/CIS solar cells can be fabricated with an efficiency greater than 14%. Open circuit voltages are typically larger than 500 mV and the optimum range of ZnSe film thickness for maximum efficiency is between 100 Å and 250 Å. Photocurrents are significantly reduced as the film thickness exceeds 250 Å. Photoluminescence spectroscopy has been utilized to characterize the physical nature of CIS substrate surfaces, and ZnSe-CIS interfaces. These studies indicate that a segregated phase(s) exists at the surface of as received Siemens substrates. Additionally, it is determined that the segregated phase(s) still exist after the ZnSe growth process. To date, sputtered ZnO top contact layers have caused degradation of the photovoltaic properties of the ZnSe/CIS structure. Investigations of the effects of MOCVD grown ZnO upon ZnSe/CIS structures will soon be initiated. To establish the feasibility of ZnSe as a window layer, cells have been fabricated by incorporating a protective layer of CdS between the ZnSe and ZnO. A total area efficiency of 11% was obtained with such a structure.
Download or read book Investigation of Polycrystalline Thin Film CuInSe2 Solar Cells Based on ZnSe Windows written by Larry C. Olsen and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Polycrystalline Thin Film CuInSe2 Solar Cells Based on ZnSe Windows written by Larry C. Olsen and published by . This book was released on 1995 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Polycrystalline Thin Film CuInSe2 Solar Cells Based on ZnSe Windows written by Larry C. Olsen and published by . This book was released on 1994 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Polycrystalline Thin Film CuInSe2 Solar Cells Based on ZnSe Windows written by Larry C. Olsen and published by . This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes investigations of ZnSe/copper indium diselenide (CIS) solar cells being carried out to improve the efficiencies of CIS cells and to determine if ZnSe is a viable alternative to CdS as a window material. Metal-organic chemical vapor deposition (MOCVD) growth of ZnSe is accomplished in a Spire 500XT reactor by reacting a zinc adduct with H2Se.
Download or read book Alternative Window Schemes for CuInSe2 based Solar Cells Annual Report 1 November 1995 31 October 1996 written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this program are to develop alternate heterojunction partner layers (buffer layers) for high efficiency CuInSe2-based thin-film solar cells, and improve the understanding of how these layers and the details of processing affect cell performance. Investigations have primarily involved three tasks: (1) MOCVD growth of non-cadmium containing buffer layers; (2) optimized processing of buffer layers for high efficiency solar cells; and (3) electrical and physical characterization of layers and devices. Investigations of alternative buffer layers emphasized studies of ZnO grown by MOCVD. Using CIS substrates obtained form Siemens for process development, it was determined that growth procedures that resulted in good results with Siemens CIS (non-sulfur containing material) substrates also worked well with NREL CIGS material. A two step process was developed for growing highly resistive ZnO buffer layers (i-ZnO). In particular, after growing 100 to 150 Å of ZnO at 250 C, an additional 600 Å to 800 Å were grown at 100 C. Collaboration with NREL resulted in a n-ZnO/i-ZnO/CIGS cell which was determined to have a total area efficiency of 12.7%, and an active area efficiency greater than 13%. After growing i-ZnO with the two-step process onto NREL CIGS material, the i-ZnO/CIGS film structure was sent to NREL for deposition of a TCO, namely, conducting ZnO (n-ZnO). Collector grids and a MgF2 AR coating were also deposited at NREL. Low level efforts were devoted to studies of ZnSe and InSe buffer layers. A total area efficiency of 9.5% was achieved for a completed ZnSe/CIS cell making use of a RF sputtered ZnO for a TCO. Investigations of In(subscript x)Se{sub y} (InSe) buffer layers were also initiated this past year.
Download or read book Alternative Window Schemes for CuInSe2 based Solar Cells written by Larry C. Olsen and published by . This book was released on 1998 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Polycrystalline Silicon Solar Cells written by Kalluri Ramalingeswara Sarma and published by . This book was released on 1980 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research on Polycrystalline Thin film Submodules Based on CuInSe2 Materials written by and published by . This book was released on 1996 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work performed by Solarex Corporation to enter i nto the development of CIS-based photovoltaic (PV) products. The activity began with developing manufacturable deposition methods for all required thin-film layers and developing and understanding processes using those methods. It included demonstrating the potential for high conversion efficiency and followed with developing viable methods for module segment formation and interconnection. These process steps were integrated to fabricate monolithic CIS-based submodules. An important result of this program is the basis of understanding established i n developing this material for PV applications ... This program also allowed development and scale-up of processes for the deposition of all other substrate, heterojunction buffer, and window layers and associated scribing/module formation operations to 1 000-cm2 size. At the completion of this program, Solarex has in place most of the necessary elements to begin the transition to pilot operation of CIS manufacturing activities.
Download or read book Alternative Window Schemes for CuInSe2 based Solar Cells written by Larry C. Olsen and published by . This book was released on 1997 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this program are to develop alternate heterojunction partner layers (buffer layers) for high-efficiency CuInSe2-based thin-film solar cells, and improve the understanding of how these layers and the details of processing affect cell performance. Investigations have primarily involved three tasks: (1) metal-organic chemical vapor deposition (MOCVD) growth of noncadmium-containing buffer layers, (2) optimized processing of buffer layers for high-efficiency solar cells, and (3) electrical and physical characterization of layers and devices.
Download or read book Research on Polycrystalline Thin film Submodules Based on CuInSe2 Materials written by Rajiv R. Arya and published by . This book was released on 1996 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Alternative Window Schemes for CuInSe2 Based Solar Cells Final Report written by and published by . This book was released on 1998 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work demonstrated high-efficiency CIGS cells based on highly resistive ZnO buffer layers grown by MOCVD. One cell based on NREL CIGS and a ZnO buffer layer exhibited an active-area efficiency of nearly 14%. This result is one of the best efficiencies reported for a ''direct'' ZnO/CIGS cell made with a vacuum process.
Download or read book Investigation of Polycrystalline Thin film CuInSe2 Solar Cells written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
