Download or read book Investigation of Gallium Arsenide Solar Cell Structures Using Deep Level Transient Spectroscopy written by David Philip Rancour and published by . This book was released on 1990 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy written by Joseph A. Bruening and published by . This book was released on 1993 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy written by and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power loss in spacecraft solar cells due to radiation damage was investigated. The mechanisms behind the degradation and based on deep-level defects in the crystalline lattice structure of the solar cell. Through a process known as Deep Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy of the cell. Gallium (GaAs/Ge) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation, to fluences of 1E16 electrons/sq cm. Attempts at recovery included thermal annealing, alone, and with an applied forward bias current, and injection annealing. Various cycles of irradiation, annealing and DLTS were performed, in an attempt to correlate damage to trap energy level and growth. The results show that DLTS cannot be performed on GaAs/Ge, and no recovery was apparent in these cells. DLTS analysis of InP indicated excellent photoinjection annealing recovery at a variety of temperatures. Lower energy level defects are associated with the recovery of the cells while the higher energy traps are indicative of permanent degradation in the Inp solar cells. Applying this information to future research could increase satellite mission life, and significantly reduce space mission costs. Radiation damage in solar cells, DLTS, Annealing, Heterojunction, Gallium arsenide, Indium phosphide.
Download or read book Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy Techniques written by and published by . This book was released on 1991 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy (DLTS), a correlation can be made between damage/recovery and trap energy level/concentration of the cell. Gallium Arsenide (GaAs) and Indium Phosphide (InP) solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E14 and 1E15 electrons/sq cm. The process of annealing included thermal annealing at 90 C with forward bias current and thermal annealing alone (for GaAs). After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide" by Venkataramana Reddy, Chavva, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123559 Subjects: Gallium arsenide Silicon carbide Spectrum analysis Rapid thermal processing
Download or read book Deep level Transient Spectroscopy Studies of Gallium Arsenide Aluminum Gallium Arsenide Heterostructures and Superlattices written by Paul Alan Martin and published by . This book was released on 1986 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of two projects. First, the feasibility of using deep-level transient spectroscopy (DLTS) to measure conduction band-edge discontinuities in GaAS-AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS. Deep-level transient spectroscopy is reviewed, as are theoretical and experimental attempts to predict and measure band offsets. A theory of electron capture into and emission out of quantum wells in response to pulsed bias is developed. DLTS studies of GaAs AlGaAs quantum-well structures are presented and compared with the results of previous studies of defects in MOCVD GaAs and AlGaAs. Emission of electrons out of the GaAs quantum well is observed, but at emission rates in excess of those predicted by thermionic emission or by phonon assisted tunneling. In the absence of a model for the emission process, meaningful data for band-edge discontinuities cannot be extracted from the measured emission rates. Further characterization of the emission process would be of great value in the development of devices based on heterojunction technology. Data are also presented from a DLTS study of defect states in GaAs - AlGaAs superlattices Doubling the layer thickness from 50 to 100 A resulted in a dramatic change in the defects observed. This is accounted for by the presence of a conducting miniband in one super-lattice and its absence in the other.
Download or read book A Study of Ion Implanted Gallium Arsenide Using Deep Level Transient Spectroscopy written by N. G. Emerson and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopy Studies of Gallium Arsenide and Silicon Carbide written by Venkataramana Reddy Chavva and published by . This book was released on 1997 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1986 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Deep Level Transient Spectroscopy Study of Melt and Liquid Phase Epitaxial Grown Gallium Arsenide written by Andrew William Ralph Leitch and published by . This book was released on 1984 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1992 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Investigation of Deep Levels in Aluminum Gallium Arsenide gallium Arsenide Modulation doped Heterojunction Structures written by Anthony Joseph Valois and published by . This book was released on 1985 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy a Continuing Bibliography with Indexes written by and published by . This book was released on 1981 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Lewis Research Center written by and published by . This book was released on 1991 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Nanotechnology Research and Application 2012 Edition written by and published by ScholarlyEditions. This book was released on 2012-12-26 with total page 14170 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Nanotechnology Research and Application / 2012 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Nanotechnology. The editors have built Advances in Nanotechnology Research and Application / 2012 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Nanotechnology in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Advances in Nanotechnology Research and Application / 2012 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Solar Energy Update written by and published by . This book was released on 1983-08 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
