Download or read book Proceedings of Mechanical Engineering Research Day 2017 written by Mohd Fadzli Bin Abdollah and published by Centre for Advanced Research on Energy. This book was released on 2017-05-29 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: This e-book is a compilation of papers presented at the Mechanical Engineering Research Day 2017 (MERD'17) - Melaka, Malaysia on 30 March 2017.
Download or read book Dielectric Material Integration for Microelectronics written by William D. Brown and published by The Electrochemical Society. This book was released on 1998 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of High k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices December 14 18 1999 New Delhi 2 2000 written by and published by Allied Publishers. This book was released on 2000 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of Mechanical Engineering Research Day 2019 written by Mohd Fadzli Bin Abdollah and published by Centre for Advanced Research on Energy. This book was released on 2019-08-05 with total page 395 pages. Available in PDF, EPUB and Kindle. Book excerpt: This e-book is a compilation of papers presented at the 6th Mechanical Engineering Research Day (MERD'19) - Kampus Teknologi UTeM, Melaka, Malaysia on 31 July 2019.
Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-07-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Download or read book Nanometer CMOS written by Juin J. Liou and published by CRC Press. This book was released on 2010-02-28 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book Analysis and Characterization of GaAs MOSFET with High K Dielectric Material written by Krupal Pawar and published by GRIN Verlag. This book was released on 2015-02-11 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scientific Essay from the year 2015 in the subject Engineering - Communication Technology, , course: VLSI Technology, language: English, abstract: Analysis and characterization of the GaAs MOSFET with High-k gate dielectric material and also do the small signal analysis and noise analysis using TCAD tool. In present research work GaAs is employed as substrate material. Band gap of GaAs is about 1.43eV. Lattice constant for GaAS is 5.65A. Substrate doping is 1x10^16 cm-3. HFO2 gate dielectric deposited on GaAs(100) substrate. HFO2 film is 20nm thick. Dielectric constant of HFO2 is order of 20-25. Permittivity (F cm^-2) is 20€0. Band gap (eV) is 4.5-6.0.HFO2 grown by Atomic Layer Deposition on GaAs. The transition metal Au is proposed dopant for GaAs. Source/Drain junction depth is 20nm. Doping levels of drain source are 1e20. Gold is used for gate metal. A working GaAs device is simulated and out performs the Si core device due to its increased mobility. It also decreases leakage current. Solve the problem of Fermi level pinning. So GaAs MOSFET is always better than Si MOSFET.
Download or read book Physics and Technology of High k Gate Dielectrics I written by Samares Kar and published by . This book was released on 2003 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectrics for Nanosystems 4 Materials Science Processing Reliability and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectrics for Nanosystems 3 Materials Science Processing Reliability and Manufacturing written by D. Misra and published by The Electrochemical Society. This book was released on 2008-05 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectronics have reached below 100 nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy sources, and various types of sensing devices. As long as one or more of these functional devices is in 1-100 nm dimensions, the resultant system can be defined as nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addition to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.
Download or read book Advances in Additive Manufacturing Technologies written by P Gurusamy and published by CRC Press. This book was released on 2024-11-25 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: We are delighted to present the proceedings of the 5th International Conference on Advances in Additive Manufacturing Technologies (ICAAMT 2023). This conference serves as a premier forum for researchers, practitioners, and industry experts to share their latest findings, innovations, and insights in the field of additive manufacturing. The rapid advancements and the increasing adoption of these technologies across various sectors underscore the importance of this gathering. The conference was held from November 27-29, 2023, in Chennai, India and organized by the Department of Mechanical Engineering, Chennai Institute of Technology, Chennai, India.
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Download or read book Nanoelectronics Physics Materials and Devices written by Angsuman Sarkar and published by Elsevier. This book was released on 2023-01-03 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Approx.528 pagesApprox.528 pages
Download or read book Machine Learning Techniques for VLSI Chip Design written by Abhishek Kumar and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: MACHINE LEARNING TECHNIQUES FOR VLSI CHIP DESIGN This cutting-edge new volume covers the hardware architecture implementation, the software implementation approach, the efficient hardware of machine learning applications with FPGA or CMOS circuits, and many other aspects and applications of machine learning techniques for VLSI chip design. Artificial intelligence (AI) and machine learning (ML) have, or will have, an impact on almost every aspect of our lives and every device that we own. AI has benefitted every industry in terms of computational speeds, accurate decision prediction, efficient machine learning (ML), and deep learning (DL) algorithms. The VLSI industry uses the electronic design automation tool (EDA), and the integration with ML helps in reducing design time and cost of production. Finding defects, bugs, and hardware Trojans in the design with ML or DL can save losses during production. Constraints to ML-DL arise when having to deal with a large set of training datasets. This book covers the learning algorithm for floor planning, routing, mask fabrication, and implementation of the computational architecture for ML-DL. The future aspect of the ML-DL algorithm is to be available in the format of an integrated circuit (IC). A user can upgrade to the new algorithm by replacing an IC. This new book mainly deals with the adaption of computation blocks like hardware accelerators and novel nano-material for them based upon their application and to create a smart solution. This exciting new volume is an invaluable reference for beginners as well as engineers, scientists, researchers, and other professionals working in the area of VLSI architecture development.
