Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1988 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Download or read book Reduced Thermal Processing for ULSI written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.
Download or read book Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes written by E M Anastassakis and published by World Scientific. This book was released on 1990-11-29 with total page 2768 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Download or read book Handbook of Deposition Technologies for Films and Coatings written by Rointan F. Bunshah and published by William Andrew. This book was released on 1994-12-31 with total page 887 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition, edited by the world-renowned Dr. Rointain Bunshah, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. Considerably more material was added in Plasma Assisted Vapor Deposition processes, as well as Metallurgical Coating Applications.
Download or read book Handbook of Deposition Technologies for Films and Coatings written by Rointan Framroze Bunshah and published by William Andrew. This book was released on 1994 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition, edited by the world-renowned Dr. Rointain Bunshah, is an extensive update of the many improvements in deposition technologies, mechanisms, and applications. Considerably more material was added in Plasma Assisted Vapor Deposition processes, as well as Metallurgical Coating Applications.
Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 2003 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by Elsevier. This book was released on 2009-12-08 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to MEMS materials, technologies and manufacturing, examining the state of the art with a particular emphasis on current and future applications. Key topics covered include: - Silicon as MEMS material - Material properties and measurement techniques - Analytical methods used in materials characterization - Modeling in MEMS - Measuring MEMS - Micromachining technologies in MEMS - Encapsulation of MEMS components - Emerging process technologies, including ALD and porous silicon Written by 73 world class MEMS contributors from around the globe, this volume covers materials selection as well as the most important process steps in bulk micromachining, fulfilling the needs of device design engineers and process or development engineers working in manufacturing processes. It also provides a comprehensive reference for the industrial R&D and academic communities. - Veikko Lindroos is Professor of Physical Metallurgy and Materials Science at Helsinki University of Technology, Finland. - Markku Tilli is Senior Vice President of Research at Okmetic, Vantaa, Finland. - Ari Lehto is Professor of Silicon Technology at Helsinki University of Technology, Finland. - Teruaki Motooka is Professor at the Department of Materials Science and Engineering, Kyushu University, Japan. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for dramatic reduction of packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc), manufacturing, processing, measuring (incl. focused beam techniques), and multiscale modeling methods of MEMS structures
Download or read book International Conference on the Physics of Semiconductors written by and published by . This book was released on 1990 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Ellipsometry written by Harland Tompkins and published by William Andrew. This book was released on 2005-01-06 with total page 887 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Ellipsometry is a critical foundation text on an increasingly critical subject. Ellipsometry, a measurement technique based on phase and amplitude changes in polarized light, is becoming popular in a widening array of applications because of increasing miniaturization of integrated circuits and breakthroughs in knowledge of biological macromolecules deriving from DNA and protein surface research. Ellipsometry does not contact or damage samples, and is an ideal measurement technique for determining optical and physical properties of materials at the nano scale. With the acceleration of new instruments and applications now occurring, this book provides an essential foundation for the current science and technology of ellipsometry for scientists and engineers in industry and academia at the forefront of nanotechnology developments in instrumentation, integrated circuits, biotechnology, and pharmaceuticals. Divided into four parts, this comprehensive handbook covers the theory of ellipsometry, instrumentation, applications, and emerging areas. Experts in the field contributed to its twelve chapters, covering various aspects of ellipsometry.
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Download or read book Second Order Non linear Optics of Silicon and Silicon Nanostructures written by O. A. Aktsipetrov and published by CRC Press. This book was released on 2018-09-03 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory and practice of the non-linear optics of silicon are inextricably linked with a variety of areas of solid state physics, particularly semiconductor physics. However, the current literature linking these fields is scattered across various sources and is lacking in depth. Second Order Non-linear Optics of Silicon and Silicon Nanostructures describes the physical properties of silicon as they apply to non-linear optics while also covering details of the physics of semiconductors. The book contains six chapters that focus on: The physical properties and linear optics of silicon Basic theoretical concepts of reflected second harmonics (RSH) The authors’ theory of the generation of RSH at the non-linear medium–linear medium interface An analytical review of work on the non-linear optics of silicon The results of non-linear optical studies of silicon nanostructures A theory of photoinduced electronic processes in semiconductors and their influence on RSH generation The book also includes methodological problems and a significant amount of reference data. It not only reflects the current state of research but also provides a single, thorough source of introductory information for those who are becoming familiar with non-linear optics. Second Order Non-linear Optics of Silicon and Silicon Nanostructures is a valuable contribution to the fields of non-linear optics, semiconductor physics, and microelectronics, as well as a useful resource for a wide range of readers, from undergraduates to researchers.
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanopores written by Samir M. Iqbal and published by Springer Science & Business Media. This book was released on 2011-07-12 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanopores are nanometer scale holes formed naturally by proteins or cells, and can be used for a variety of applications, including sequencing DNA and detecting anthrax. They can be integrated into artificially constructed encapsulated cells of silicon wafers while allowing small molecules like oxygen, glucose and insulin to pass, while keeping out large system molecules. "Nanopores: Sensing and Fundamental Biological Interactions" examines the emerging research directions surrounding nanopores such as genome sequencing and early disease detection using biomarker identification. Covering the applications of nanopores in genetics, proteomics, drug discovery, early disease detection and detection of emerging environmental threats, it is a must-have book for biomedicalengineers and research scientists.
Download or read book Physics Briefs written by and published by . This book was released on 1990 with total page 1286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
