Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 4 written by and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 3 written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 5 written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989-01-01 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Download or read book Proceedings of the International Symposium on the Structure and Properties of Dislocations in Semiconductors 6th Held in Oxford England 5 8 April 1989 Structure and Properties of Dislocations in Semiconductors 1989 written by and published by . This book was released on 1989 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).
Download or read book Properties and Structures of Dislocations in Semiconductors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding written by U. Gösele and published by The Electrochemical Society. This book was released on 1998 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength written by H. Kitagawa and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the IUT AM Symposium of "Mesoscopic Dynamics of Fracture Process and Materials Strength", held in July 2003, at the Hotel Osaka Sun Palace, Osaka, Japan. The Symposium was proposed in 2001, aiming at organizing concentrated discussions on current understanding of fracture process and inhomogeneous deformation governing the materials strength with emphasis on the mesoscopic dynamics associated with evolutional mechanical behaviour under micro/macro mutual interaction. The decision of the General Assembly of International Union of Theoretical and Applied Mechanics (IUT AM) to accept our proposal was well-timed and attracted attention. Driven by the development of new theoretical and computational techniques, various novel challenges to investigate the mesoscopic dynamics have been actively done recently, including large-scaled 3D atomistic simulations, discrete dislocation dynamics and other micro/mesoscopic computational analyses. The Symposium attracted sixty-six participants from eight countries, and forty two papers were presented. The presentations comprised a wide variety of fundamental subjects of physics, mechanical models, computational strategies as well as engineering applications. Among the subjects, discussed are (a) dislocation patterning, (b) crystal plasticity, (c) characteristic fracture of amorphous/nanocrystal, (d) nano-indentation, (e) ductile-brittle transition, (f) ab-initio calculation, (g) computational methodology for multi-scale analysis and others.
Download or read book Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Special Report written by and published by . This book was released on 1996 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dislocations and Properties of Real Materials written by Metals Society. Metal Science Committee and published by Ashgate Publishing. This book was released on 1985 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dislocations in Solids written by Hiroshi Suzuki and published by CRC Press. This book was released on 2023-03-08 with total page 691 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises the Proceedings of the Yamada Conference IX on Dislocations in Solids, held in August 1984 in Tokyo. The purpose of the conference was two-fold: firstly to evaluate the increasing data on basic properties of dislocations and their interaction with other types of defects in solids and, secondly, to increase understanding of the material properties brought about by dislocation-related phenomena. Metals and alloys, semi-conductors and ions crystals were discussed. One of the important points of contention was the electronic state at the core of dislocation. Another was the dislocation model of amorphous structure.
Download or read book Fundamental Aspects of Dislocation Interactions written by G. Kostorz and published by Elsevier. This book was released on 2013-09-03 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamental Aspects of Dislocation Interactions: Low-Energy Dislocation Structures III covers the papers presented at a European Research Conference on Plasticity of Materials-Fundamental Aspects of Dislocation Interactions: Low-Energy Dislocation Structures III, held on August 30-September 4, 1992 in Ascona, Switzerland. The book focuses on the processes, technologies, reactions, transformations, and approaches involved in dislocation interactions. The selection first offers information on work softening and Hall-Petch hardening in extruded mechanically alloyed alloys and dynamic origin of dislocation structures in deformed solids. Discussions focus on stress-strain behavior in relation to composition, structure, and annealing; comparison of stress-strain curves with work softening theory; sweeping and trapping mechanism; and model of dipolar wall structure formation. The text then ponders on plastic instabilities and their relation to fracture and dislocation and kink dynamics in f.c.c. metals studied by mechanical spectroscopy. The book takes a look at misfit dislocation generation mechanisms in heterostructures and evolution of dislocation structure on the interfaces associated with diffusionless phase transitions. Discussions focus on dislocation representation of a wall of elastic domains; equation of equilibrium of an elastic domain; transformation of dislocations; and theoretical and experimental background. The selection is a valuable reference for readers interested in dislocation interactions.
Download or read book Structure and Properties of Extended Defects in Semiconductors written by European Science Foundation and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Formation Of Semiconductor Interfaces Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
