Download or read book Intermodulation Distortion Modelling and Measurement Techniques for GaN HEMT Characterization written by and published by kassel university press GmbH. This book was released on with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Large signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Download or read book Basic Properties of III V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Download or read book Large Signal Modeling of GaN Device for High Power Amplifier Design written by Anwar Hasan Jarndal and published by kassel university press GmbH. This book was released on 2006 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intermodulation Distortion in GaN HEMT written by Ibrahim Khalil and published by . This book was released on 2009 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modern RF and Microwave Measurement Techniques written by Valeria Teppati and published by Cambridge University Press. This book was released on 2013-06-20 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive, hands-on review of the most up-to-date techniques in RF and microwave measurement combines microwave circuit theory and metrology, in-depth analysis of advanced modern instrumentation, methods and systems, and practical advice for professional RF and microwave engineers and researchers. Topics covered include microwave instrumentation, such as network analyzers, real-time spectrum analyzers and microwave synthesizers; linear measurements, such as VNA calibrations, noise figure measurements, time domain reflectometry and multiport measurements; and non-linear measurements, such as load- and source-pull techniques, broadband signal measurements, and non-linear NVAs. Each technique is discussed in detail and accompanied by state-of-the-art solutions to the unique technical challenges associated with its use. With each chapter written by internationally recognised experts in the field, this is an invaluable resource for researchers and professionals involved with microwave measurements.
Download or read book Advances in Microelectronics Reviews Vol 1 written by Sergey Yurish and published by Lulu.com. This book was released on 2018-01-12 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1st volume of 'Advances in Microelectronics: Reviews' Book Series contains 19 chapters written by 72 authors from academia and industry from 16 countries. With unique combination of information in each volume, the 'Advances in Microelectronics: Reviews' Book Series will be of value for scientists and engineers in industry and at universities. In order to offer a fast and easy reading of the state of the art of each topic, every chapter in this book is independent and self-contained. All chapters have the same structure: first an introduction to specific topic under study; second particular field description including sensing applications. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Download or read book Linearization Techniques for Integrated CMOS Power Amplifiers and a High Efficiency Class F GaN Power Amplifier written by Sangwon Ko and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: My study was on linearization techniques for integrated CMOS power amplifiers and a highefficiency GaN power amplifier. My study proposes two types of predistortion linearizationcircuits compatible with CMOS processes. Dynamic impedance lines of the nonlinearitygeneration circuits of the proposed predistorters were analyzed and the equivalent circuits of thenonlinearity generation circuit were obtained from the large signal simulation. Characteristics of the predistorter circuits were analyzed and compared. The phase distortion characteristic of the cascode CMOS power amplifier was also investigated. The predistorter circuits were fully integrated into CMOS power amplifiers. Three kinds of CMOS power amplifier were fabricated and the small signal characteristics and the large signal characteristics of the CMOS power amplifier were measured. Results showed that the third-order intermodulation distortion of the power amplifier was improved by the integrated predistorters. The developed predistorters can be applied to both the CMOS process and the compound semiconductor process. The predistorters also have low loss and low power consumption characteristics. My study also describes a high efficiency power amplifier using a wide bandgap GaN HEMTdevice. The dc and ac characteristics of GaN HEMT device were measured and modeled using theCurtice cubic model. The GaN HEMT device was mounted on a high dielectric constant substrate and class F configuration was implemented at the output of the GaN HEMT device. Results showed high efficiency operation of the power amplifier using a wide bandgap GaN device at microwave frequency.
Download or read book Control Components Using Si GaAs and GaN Technologies written by Inder J. Bahl and published by Artech House. This book was released on 2014-09-01 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.
Download or read book Neural Information Processing written by Tingwen Huang and published by Springer. This book was released on 2012-11-05 with total page 730 pages. Available in PDF, EPUB and Kindle. Book excerpt: The five volume set LNCS 7663, LNCS 7664, LNCS 7665, LNCS 7666 and LNCS 7667 constitutes the proceedings of the 19th International Conference on Neural Information Processing, ICONIP 2012, held in Doha, Qatar, in November 2012. The 423 regular session papers presented were carefully reviewed and selected from numerous submissions. These papers cover all major topics of theoretical research, empirical study and applications of neural information processing research. The 5 volumes represent 5 topical sections containing articles on theoretical analysis, neural modeling, algorithms, applications, as well as simulation and synthesis.
Download or read book Nonlinear Circuit Simulation and Modeling written by José Carlos Pedro and published by Cambridge University Press. This book was released on 2018-06-14 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover the nonlinear methods and tools needed to design real-world microwave circuits with this tutorial guide. Balancing theoretical background with practical tools and applications, it covers everything from the basic properties of nonlinear systems such as gain compression, intermodulation and harmonic distortion, to nonlinear circuit analysis and simulation algorithms, and state-of-the-art equivalent circuit and behavioral modeling techniques. Model formulations discussed in detail include time-domain transistor compact models and frequency-domain linear and nonlinear scattering models. Learn how to apply these tools to designing real circuits with the help of a power amplifier design example, which covers all stages from active device model extraction and the selection of bias and terminations, through to performance verification. Realistic examples, illustrative insights and clearly conveyed mathematical formalism make this an essential learning aid for both professionals working in microwave and RF engineering and graduate students looking for a hands-on guide to microwave circuit design.
Download or read book Fundamentals of Terahertz Devices and Applications written by Dimitris Pavlidis and published by John Wiley & Sons. This book was released on 2021-07-19 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: An authoritative and comprehensive guide to the devices and applications of Terahertz technology Terahertz (THz) technology relates to applications that span in frequency from a few hundred GHz to more than 1000 GHz. Fundamentals of Terahertz Devices and Applications offers a comprehensive review of the devices and applications of Terahertz technology. With contributions from a range of experts on the topic, this book contains in a single volume an inclusive review of THz devices for signal generation, detection and treatment. Fundamentals of Terahertz Devices and Applications offers an exploration and addresses key categories and aspects of Terahertz Technology such as: sources, detectors, transmission, electronic considerations and applications, optical (photonic) considerations and applications. Worked examples—based on the contributors' extensive experience— highlight the chapter material presented. The text is designed for use by novices and professionals who want a better understanding of device operation and use, and is suitable for instructional purposes This important book: Offers the most relevant up-to-date research information and insight into the future developments in the technology Addresses a wide-range of categories and aspects of Terahertz technology Includes material to support courses on Terahertz Technology and more Contains illustrative worked examples Written for researchers, students, and professional engineers, Fundamentals of Terahertz Devices and Applications offers an in-depth exploration of the topic that is designed for both novices and professionals and can be adopted for instructional purposes.
Download or read book Characteristics Optimization and Integrated Circuit Applications of Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistors written by Bruce McRae Green and published by . This book was released on 2001 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Considerations Modeling and Characterization of GaN HEMTs and Design of High Frequency and High Power MMIC Amplifiers written by Ömer Cengiz and published by . This book was released on 2011 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave De embedding written by Antonio Raffo and published by Elsevier Inc. Chapters. This book was released on 2013-11-09 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: The chapter deals with two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design. In particular, the nonlinear embedding and de-embedding design techniques are detailed, along with evidence of their advantages with respect to conventional design approaches in terms of power and frequency handling capability. The discussion also details the differences between the two techniques; despite the fact that they share the same theoretical basis, the techniques suffer from different critical facets. Finally, with the aim of guiding the reader towards full comprehension of the topic, different experimental examples are provided for transistor characterization and PA design.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
