Download or read book Integrated Sub Millimeter Wave High Power Amplifiers in Advanced InGaAs Channel HEMT Technology written by Laurenz John and published by Fraunhofer Verlag. This book was released on 2021-12-09 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: Driven by the large absolute bandwidths that are available at the sub-mm-wave frequency range around 300 GHz, wireless high-data-rate communication systems and high-resolution imaging applications are being extensively investigated in recent years. Due to their superior characteristics in terms of noise figure and cutoff frequencies, InGaAs-channel HEMT devices have proven to be a key technology to implement the required active front-end MMICs for these wireless THz systems, enabling ultra-high bandwidths and state-of-the-art noise performance. This work describes the modeling, design, and characterization of 300-GHz HEMT-based power amplifier cells and demonstrates the implementation of highly compact amplifier MMICs and broadband waveguide modules. These amplifiers are key components for the implementation of high-performance chipsets for wireless THz systems, providing high output power for the utilization of next-generation communication and imaging applications. A unique amplifier topology based on multi-finger cascode and common-source devices is developed and evaluated, demonstrating more than 20-mW measured output power at the sub-mm-wave frequency range around 300 GHz.

Download or read book Millimeter Wave Power Amplifiers written by Jaco du Preez and published by Springer. This book was released on 2017-10-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.

Download or read book Advanced Indium Arsenide Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-29 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.

Download or read book GaN HEMT Modeling and Design for Millimeter and Sub millimeter Wave Power Amplifiers Through Monte Carlo Particle based Device Simulations written by Diego Guerra and published by . This book was released on 2011 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive towards device scaling and large output power in millimeter and sub-millimeter wave power amplifiers results in a highly non-linear, out-of-equilibrium charge transport regime. Particle-based Full Band Monte Carlo device simulators allow an accurate description of this carrier dynamics at the nanoscale. This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology, through a modeling approach that allows a fair comparison, indicating that the N-face devices exhibit improved performance with respect to Ga-face ones due to the natural back-barrier confinement that mitigates short-channel-effects. An investigation is then carried out on the minimum aspect ratio (i.e. gate length to gate-to-channel-distance ratio) that limits short channel effects in ultra-scaled GaN and InP HEMTs, indicating that this value in GaN devices is 15 while in InP devices is 7.5. This difference is believed to be related to the different dielectric properties of the two materials, and the corresponding different electric field distributions. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated, finding that the effective gate length is increased by fringing capacitances, enhanced by the dielectrics in regions adjacent to the gate for layers thicker than 5 nm, strongly affecting the frequency performance of deep sub-micron devices. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of mm-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a CellularMonte Carlo (CMC) code is self-consistently coupled with a Harmonic Balance (HB) frequency domain circuit solver. Due to the iterative nature of the HB algorithm, this simulation approach is possible only due to the computational efficiency of the CMC, which uses pre-computed scattering tables. On the other hand, HB allows the direct simulation of the steady-state behavior of circuits with long transient time. This work provides an accurate and efficient tool for the device early-stage design, which allows a computerbased performance evaluation in lieu of the extremely time-consuming and expensive iterations of prototyping and experimental large-signal characterization.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Doherty Power Amplifiers written by Bumman Kim and published by Academic Press. This book was released on 2018-03-28 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doherty Power Amplifiers: From Fundamentals to Advanced Design Methods is a great resource for both RF and microwave engineers and graduate students who want to understand and implement the technology into future base station and mobile handset systems. The book introduces the very basic operational principles of the Doherty Amplifier and its non-ideal behaviors. The different transconductance requirements for carrier and peaking amplifiers, reactive element effect, and knee voltage effect are described. In addition, several methods to correct imperfections are introduced, such as uneven input drive, gate bias adaptation, dual input drive and the offset line technique. Advanced design methods of Doherty Amplifiers are also explained, including multistage/multiway Doherty power amplifiers which can enhance the efficiency of the amplification of a highly-modulated signal. Other covered topics include signal tracking operation which increases the dynamic range, highly efficient saturated amplifiers, and broadband amplifiers, amongst other comprehensive, related topics. - Specifically written on the Doherty Power Amplifier by the world's leading expert, providing an in-depth presentation of principles and design techniques - Includes detailed analysis on correcting non-ideal behaviors of Doherty Power Amplifiers - Presents advanced Doherty Power Amplifier architectures

Download or read book Design of Millimeter Wave Power Amplifiers in Gallium Nitride High Electron Mobility Transistor Technology written by Maciej Cwiklinski and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book mm Wave Silicon Power Amplifiers and Transmitters written by Hossein Hashemi and published by Cambridge University Press. This book was released on 2016-04-04 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Build high-performance, energy-efficient circuits with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems.

Download or read book Advanced GaN HEMT Technology for Millimetre wave Amplifiers written by Aniket Dhongde and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analysis Design and Experimental Evaluation of Sub THz Power Amplifiers Based on GaAs Metamorphic HEMT Technology written by Ana Belen Amado Rey and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1995 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design of Millimeter wave Power Amplifiers Using InP Heterojunction Bipolar Transistors written by Tomás O'Sullivan and published by . This book was released on 2009 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this dissertation is on the development of high power, monolithically integrated amplifiers for millimeter-wave wireless communication systems utilizing InP DHBT devices. Due to the ever increasing bandwidth requirements of wireless communications systems, the large amount of spectrum available at millimeter-wave frequencies is making these frequency bands increasingly more relevant. This spurs the need for the development of the various circuit and system building blocks required for implementation of reliable communications systems taking advantage of these wide-band channels. The challenges posed in the development of millimeter-wave power amplifier design range from device model development, to circuit design aspects and also compact power combiner design. The large signal nature of power amplifier operation requires device models, which accurately capture the nonlinear and heating effects of the devices used in the power amplifier design. Techniques for the measurement and model extraction of InP DHBT devices for millimeter-wave applications are discussed in detail. As part of the design of a compact millimeter-wave power amplifier, the optimum design of thermal ballasting networks and cascode termination impedances are described. Design tradeoffs in the choice of load resistance for the design are also explained. Using these techniques, a compact power amplifier operating at 72GHz was designed exhibiting 20.6dBm output power and 13.9% PAE. Finally, the design of a novel planar radial power splitter and combiner architecture is described. Transmission lines, vertical transitions and microstrip crossovers required for the implementation of this structure are explained in detail. Using this structure a high power amplifier is designed with a center frequency of 72GHz. This amplifier demonstrates an output power of 24.6dBm along with a PAE of 8.9%.

Download or read book Design of Silicon Power Ampliers and Arrays for Millimeter Wave Applications written by Bassel Hanafi and published by . This book was released on 2014 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: With emerging millimeter wave applications including automotive radars, wireless transmission of high-definition content, and possibly 5G mobile communications, low cost and high performance power amplifiers are key for enabling a commercial mass market. Silicon technologies offer cost advantages but typically suffer from low breakdown voltage and low Q passive elements yielding low power density and low efficiency. This thesis presents millimeter wave power amplifiers implemented in main stream silicon technologies. The task of obtaining large output power from low breakdown silicon devices is addressed by the use of stacking and power combining techniques. The design of a Q-band amplifier implemented in IBM 0.13um SiGe HBT process featuring on-chip corporate combining is first described. Stacking of bipolar transistors is introduced, together with novel low impedance biasing circuits to enable high breakdown voltage while extending the output swings. The fabricated amplifier delivered 24.7 dBm of maximum output power at 39 GHz, and 6.5% efficiency at 5.2 V without degradation. Alternatively, free-space combining can eliminate lossy on-chip combiners allowing for higher power and efficiency. A chip of 8 unit amplifiers implemented in 45nm CMOS SOI feeding a 2x2 array of differentially-fed patch antennas is demonstrated. With this chip, using CMOS stacking techniques, high output power (28 dBm) was achieved from a 3-stage amplifier operating at 45 GHz. When coupled to the antennas, the array provided an equivalent isotropic radiated power (EIRP) of 40 dBm (10 W), and a larger system comprising 4 chips feeding a 2x8 array was shown to deliver an EIRP of 50 dBm (100 W) at 45 GHz, while demonstrating, for the first time, a total RF power of 33 dBm which is a record in silicon at this frequency. The estimated peak PAE for both arrays are 13.5% and 10.7%, respectively. Finally, power amplifiers implemented in SOI technology can suffer from severe self-heating. The thermal behavior of CMOS SOI PAs is evaluated using 3D thermal simulations, and the effects of the back-end interconnect as well as the layout on the overall thermal resistance are discussed. The models were verified against measurements for an individual FET using the output conductance method. For a stacked-FET PA fabricated in 45nm CMOS SOI, the models reveal an excessive temperature rise of 150C for the FETs at maximum power, hence simple ideas were proposed to improve the thermal resistance of SOI circuits, with limited impact on electrical performance.

Download or read book Design of Millimeter Wave Power Ampliers in Silicon written by Nader Kalantari and published by . This book was released on 2013 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first part of this dissertation focuses on the millimeter-wave power amplifier in silicon where both switching and linear power amplifiers were investigated. In Chapter 2, a Q-band, Class-E power amplifier has been designed and fabricated in a 120 nm SiGe BiCMOS technology. The amplifier was designed for high output power using on-chip power combining networks. It operates respectively from a 1.2 V supply for peak efficiency and a 2.4 V supply for maximum power and occupies an area of 0.801 mm2. A peak PAE of 18% is measured for an output power of 11.3 dBm at 45 GHz and a maximum of 19.4 dBm is measured at 42 GHz with a PAE of 14.4%. The power amplifier operates from 42 to 50 GHz. Chapter 3, presents a W-band, tapered constructive wave power amplifier (TCWPA) that has been designed and fabricated in a 120 nm SiGe BiCMOS technology. The amplifier has a 3 dB BW of 19 GHz from 91-110 GHz and a maximum gain of 12.5 dB at 101 GHz. At 98 GHz, OP1dB is 4.9 dBm. At 97 GHz, saturated output power is 5.9 dBm and the PAE is 7.2%. The amplifier operates from a 2.4 V supply and occupies an area of 0.22 mm2. A novel circuit topology for power amplifier was introduced in Chapter 4 where only one network is used to provide both input and output matching. This new topology incorporates a feedback network around the transistor to satisfy matching requirements. Circuit parameters can be tuned for small- and large-signal circuit operation. The power amplifier is fabricated in a 120 nm SiGe BiCMOS process and performs from 36 to 41 GHz. The PA achieves a saturated output power of 23 dBm and a peak power added efficiency of 20% at 38 GHz. The second part of this dissertation focuses on the performance analysis of phase-interpolated dual loop clock and data recovery. It presents a four channel receiver for high-speed signal conditioning. Each channel consists of a continuous time linear equalizer (CTLE) and a dual loop CDR with phase-interpolator. All channels share a single PLL that generates and distributes quadrature clock phases to each CDR for data recovery. Clock amplitude, phase INL and phase DNL are derived for IQ phase error and predict phase-dependent jitter contributions to the recovered clock. The multilane receiver was designed in 130 nm CMOS technology. The die occupies an area of 1930 [mu]m by 1250 [mu]m and consumes 67.9 mW per channel. It achieves a maximum data rate of 7 Gbps per channel for 0 and ±200 ppm clock frequency deviation. Quadrature clocks are used in locking mechanism of phase-interpolated CDRs. Due to circuit non-idealities, any mismatch in the quadraure phase causes jitter increase and ultimately increase of bit error rate. The material is presented in Chapter 5.

Download or read book High Efficiency and High Linearity Power Amplifiers for 5G Wireless Communications written by Duy Phuong Nguyen and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: With the increasing demand for higher data rates and the crowding of the cellular bands below 3 GHz, researchers are looking to the millimeter-wave frequency spectrum to define the next generation of mobile broadband communications. One of the biggest challenges in implementing a millimeter-wave solution is the low efficiency of commercially available millimeter-wave power amplifiers. Furthermore, the monolithic millimeter-wave integrated circuit (MMIC) power amplifiers also need to have high power with reasonable gain, good linearity and maintain a compact chip size. In Chapter 1 and Chapter 2 of this dissertation, a compact high efficiency Ka-band power amplifier and a highly linear amplifier using second harmonic injection will be demonstrated. The requirements are even more stringent when the amplifiers are deployed in wireless systems that have high peak to average power ratio (PAPR). Among the most popular solutions to achieve high efficiency at power back-off is the Doherty architecture. Thus far, Doherty power amplifiers have been primarily implemented in the spectrum below 3 GHz for cellular base stations. Very few millimeter-wave Doherty PA’s have been reported to date. The conventional Doherty architecture has several inherent drawbacks that cause low efficiency, occupy large chip size and limit the performance bandwidth. Therefore, in our work, we propose four different Doherty amplifier topologies improve the DPA performance: 1) An ultra-compact Doherty amplifier using 3-dimensional broadside coupler 2) A wideband reconfigurable Doherty amplifier 3) A high power density stacked-FET Doherty power amplifier with asymmetrical gate bias 4) A high efficiency asymmetrical Doherty power amplifier using novel load modulation scheme based on load-pull data. All the proposed DPAs are fabricated in a 0.15-[mu]m enhancement mode (E-mode) Gallium Arsenide (GaAs) process. The proposed techniques and experimental results will be discussed in Chapter 3, 4, 5 and 6.The content of this dissertation is a compilation of 18 manuscripts, all of which I am the author or co-author. The titles, publishers and publication dates of the manuscripts are listed on page xii and xiii in this dissertation.

Download or read book Development of High Efficiency Power Amplifiers for Emerging Wireless Applications written by Jeffery Alan Curtis and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this Ph.D. research, several Ka-Band power amplifiers are designed and built for use in next generation mobile broadband communication systems. The Doherty power amplifier architecture is demonstrated as a possible solution to improving the back-off efficiency of millimeter-wave power amplifiers, since many mobile broadband communication systems employ modulation formats with large peak-to-average power ratios. This research also demonstrates some novel techniques to improve upon the Doherty architecture for millimeter-wave power amplifier design. Two fully integrated Ka-Band Doherty power amplifiers are designed and developed using a 0.15-[mu]m GaAs pseudomorphic high electron mobility transistor (pHEMT) process. The first uses the classic Doherty configuration with some previously developed modifications to resolve some practical issues and achieves a measured small signal gain of 10.3 dB, measured output power at 1-dB compression point (P1dB) of 25.1 dBm, measured peak power added efficiency (PAE) of 38%, and measured PAE of 27% at 6-dB back-off power. The bias network of this same Doherty was then modified by short circuiting some resistors in the gate bias path and it then achieves a measured small signal gain of 10.5 dB, measured output power at 1-dB compression point (P1dB) of 26.9 dBm, measured peak power added efficiency of 42%, and measured PAE of 32% at 6-dB back-off power. The second Doherty amplifier uses a novel load-pull based Doherty technique accounting for nonideal back-off impedance in millimeter-wave power amplifiers and achieves a measured small signal gain of 9 dB, simulated output power at 1-dB compression point (P1dB) of 29 dBm, simulated peak power added efficiency of 46%, and simulated PAE of 35% at 6-dB back-off power. The performance achieved with these power amplifiers makes them a promising candidate for use in next generation mobile broadband communication systems.