Download or read book Inductively Coupled Plasma Etching of InP written by Hsin-Yi Chen and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Inductively coupled plasma (ICP) etching is a promising low-pressure high-density process for pattern transfer required during microelectronic and opto-electronic fabrication. In this work, an ICP system has been successfully constructed for the purpose of etching InP, a highly attractive material for applications in optical communication and high-speed integrated circuits. Different types of gas mixtures including CH4/H2, CH 4/H2/Ar, CH4/H2/N2, H 2/N2 and H2/Ar were used as plasma precursors. The influence of gas composition, RF power, total flow rate and pressure on etch rate, etch profile and surface morphology (roughening and stoichiometry) was studied. CH4/H2-based plasmas provided an anisotropic etching process with high selectivity. Surface roughening and phosphorous-depletion were yielded on etched surfaces due to an imbalance in removal of In and P. ICP etching of InP using H2/NL was demonstrated for the first time. Mirrorlike etched surfaces were obtained. A common occurrence of overcut was found on mesa sidewalls, believed to be due to SiO2 masks erosion.
Download or read book Inductively Coupled Plasma Etching of InP written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Inductively Coupled Plasma Etching of InP with Cl2 H2 Ar Plasma written by and published by . This book was released on 2012 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Inductively Coupled Plasma Etching in ICl and IBr Based Chemistries written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.
Download or read book Etching Characteristics of InxGa1 xAs and InP by Inductively Coupled Plasma Etching ICP Technique written by Vicknesh Sahmuganathan and published by . This book was released on 2005 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Etched Facet Photonic Devices on InP AlGaInAs Using Inductively Coupled Plasma Etching written by Reasat Hasan Fahim and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effect of Inert Gas Additive Species on Cl 2 High Density Plasma Etching of Compound Semiconductors written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of the additive noble gases He, Ar and Xe on chlorine-based Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs were studied as a function of source power, chuck power and discharge composition. The etch rates of all materials with C12/He and C12/Xe are greater than with C12/Ar. Etch rates in excess of 4.8 pndmin for InP and InSb with C12/He or C12/Xe, 0.9 pndmin for InGaP with C12/Xe, and 3.8 prdmin for InGaAs with Clz/Xe were obtained at 750 W ICP power, 250 W rf power, - 1570 C12 and 5 mTorr. All three plasma chemistries produced smooth morphologies for the etched InGaP surfaces, while the etched surface of InP showed rough morphology under all conditions.
Download or read book Inductively Coupled Plasma Etching of III V Semiconductors in BCl 3 Based Chemistries written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A parametric study of etch rates and surface morphologies of In-containing compound semiconductors (InP, InGaAs, InGaAsP, InAs and AlInAs) obtained by BClj-based Inductively Coupled Plasmas is reported. Etch rates in the range 1,500-3,000 & min. are obtained for all the materials at moderate source powers (500 W), with the rates being a strong function of discharge composition, rf chuck power and pressure. Typical root-mean-square surface roughness of-5 nm were obtained for InP, which is worse than the values obtained for Ga-based materials under the same conditions ( -1 run). The near surface of etched samples is typically slightly deficient in the group V element, but the depth of this deficiency is small (a few tens of angstroms).
Download or read book Handbook of Advanced Plasma Processing Techniques written by R.J. Shul and published by Springer Science & Business Media. This book was released on 2011-06-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pattern transfer by dry etching and plasma-enhanced chemical vapor de position are two of the cornerstone techniques for modern integrated cir cuit fabrication. The success of these methods has also sparked interest in their application to other techniques, such as surface-micromachined sen sors, read/write heads for data storage and magnetic random access memory (MRAM). The extremely complex chemistry and physics of plasmas and their interactions with the exposed surfaces of semiconductors and other materi als is often overlooked at the manufacturing stage. In this case, the process is optimized by an informed "trial-and-error" approach which relies heavily on design-of-experiment techniques and the intuition of the process engineer. The need for regular cleaning of plasma reactors to remove built-up reaction or precursor gas products adds an extra degree of complexity because the interaction of the reactive species in the plasma with the reactor walls can also have a strong effect on the number of these species available for etching or deposition. Since the microelectronics industry depends on having high process yields at each step of the fabrication process, it is imperative that a full understanding of plasma etching and deposition techniques be achieved.
Download or read book Nanofabrication Using Focused Ion and Electron Beams written by Ivo Utke and published by OUP USA. This book was released on 2012-05 with total page 830 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively reviews the achievements and potentials of a minimally invasive, three-dimensional, and maskless surface structuring technique operating at nanometer scale by using the interaction of focused ion and electron beams (FIB/FEB) with surfaces and injected molecules.
Download or read book JJAP written by and published by . This book was released on 2004 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book State of the Art Program on Compound Semiconductors 46 SOTAPOCS 46 and Processes at the Semiconductor Solution Interface 2 written by C. O'Dwyer and published by The Electrochemical Society. This book was released on 2007 with total page 647 pages. Available in PDF, EPUB and Kindle. Book excerpt: Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.
Download or read book SiGe Ge and Related Compounds 6 Materials Processing and Devices written by D. Harame and published by The Electrochemical Society. This book was released on with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanophotonics written by Hervé Rigneault and published by John Wiley & Sons. This book was released on 2010-01-05 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanophotonicsis a comprehensive introduction to the emerging area concerned with controlling and shaping optical fields at a subwavelength scale. Photonic crystals and microcavities are extensively described, including non-linear optical effects. Local-probe techniques are presented and are used to characterize plasmonic devices. The emerging fields of semiconductor nanocrystals and nanobiophotonics are also presented.
Download or read book Proceedings of the 2009 Annual Symposium of the IEEE Photonics Benelux Chapter written by S. Beri and published by ASP / VUBPRESS / UPA. This book was released on 2010 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the proceedings of an annual symposium, this collection of research articles explores the role of optics in lasers, communication systems, sensors, and quantum electronics.
Download or read book Compact Semiconductor Lasers written by Richard De La Rue and published by John Wiley & Sons. This book was released on 2014-04-03 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
