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Download or read book Shallow Impurity Centers in Semiconductors written by A. Baldereschi and published by Elsevier. This book was released on 2012-12-02 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.

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Download or read book Molecular Beam Epitaxy written by Alfred Cho and published by American Institute of Physics. This book was released on 1994 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Market: Materials scientists and graduate students. This volume includes the most significant contributions of world- renowned scientists in the field of Molecular Beam Expitaxy (MBE). MBE is an extremely important technique for growing single crystals by making beams of atoms and molecules strike a crystalline substrate in a vacuum. This technique has found broad applications in modern materials science.

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