Download or read book Hot Carrier Effects in MOS Devices written by Eiji Takeda and published by Elsevier. This book was released on 1995-11-28 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Download or read book Hot Carrier Design Considerations for MOS Devices and Circuits written by Cheng Wang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Download or read book Two Dimensional Modeling of Hot Carrier Effects in MOS Devices written by Rajat Rakkhit and published by . This book was released on 1988 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling Hot carrier Effects in MOS Devices Using Energy Balance Equations written by Sai Krishna Mukundan and published by . This book was released on 1999 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Simulation of Hot carrier Effects in MOS Devices and Circuits written by Peter Maurice Lee and published by . This book was released on 1990 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Reliability of MOS VLSI Circuits written by Yusuf Leblebici and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book Hot carrier Effects in P MOSFETs written by Tong-Chern Ong and published by . This book was released on 1988 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Oxide Breakdown Hot Carrier and NBTI Effects on MOS Device and Circuit Reliability written by Yi Liu and published by . This book was released on 2005 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits.
Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Download or read book MOSFET Performance Degradation Due to Hot Carriers written by Jeong Yeol Choi and published by . This book was released on 1987 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Effect on LDMOS Transistors written by Liangjun Jiang and published by . This book was released on 2007 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.
Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Download or read book Proceedings of the Symposia on Reliability of Semiconductor Devices and Interconnection and Multilevel Metallization Interconnection and Contact Technologies written by Harzara S. Rathore and published by . This book was released on 1989 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2019-07-17 with total page 1788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.
Download or read book Semiconductor Silicon 1994 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 1994 with total page 1284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Reliability of MOS VLSI Circuits written by Yusuf Leblebici and published by Springer Science & Business Media. This book was released on 1993-06-30 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.
