Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book Silicon RF Power MOSFETS written by B. Jayant Baliga and published by World Scientific. This book was released on 2005 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved
Download or read book RF Power Semiconductor Generator Application in Heating and Energy Utilization written by Satoshi Horikoshi and published by Springer Nature. This book was released on 2020-03-26 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a specialized book for researchers and technicians of universities and companies who are interested in the fundamentals of RF power semiconductors, their applications and market penetration.Looking around, we see that products using vacuum tube technology are disappearing. For example, branch tube TVs have changed to liquid crystal TVs, and fluorescent light have turned into LED. The switch from vacuum tube technology to semiconductor technology has progressed remarkably. At the same time, high-precision functionalization, miniaturization and energy saving have advanced. On the other hand, there is a magnetron which is a vacuum tube device for generating microwaves. However, even this vacuum tube technology has come to be replaced by RF power semiconductor technology. In the last few years the price of semiconductors has dropped sharply and its application to microwave heating and energy fields will proceed. In some fields the transition from magnetron microwave oscillator to semiconductor microwave oscillator has already begun. From now on this development will progress remarkably. Although there are several technical books on electrical systems that explain RF power semiconductors, there are no books yet based on users' viewpoints on actual microwave heating and energy fields. In particular, none have been written about exact usage and practical cases, to answer questions such as "What are the advantages and disadvantages of RF power semiconductor oscillator?", "What kind of field can be used?" and the difficulty of the market and application. Based on these issues, this book explains the RF power semiconductors from the user's point of view by covering a very wide range of fields.
Download or read book Integrated Power Devices and TCAD Simulation written by Yue Fu and published by CRC Press. This book was released on 2017-12-19 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Download or read book Component Reliability for Electronic Systems written by Titu I. Băjenescu and published by Artech House. This book was released on 2010 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main reason for the premature breakdown of today's electronic products (computers, cars, tools, appliances, etc.) is the failure of the components used to build these products. Today professionals are looking for effective ways to minimize the degradation of electronic components to help ensure longer-lasting, more technically sound products and systems. This practical book offers engineers specific guidance on how to design more reliable components and build more reliable electronic systems. Professionals learn how to optimize a virtual component prototype, accurately monitor product reliability during the entire production process, and add the burn-in and selection procedures that are the most appropriate for the intended applications. Moreover, the book helps system designers ensure that all components are correctly applied, margins are adequate, wear-out failure modes are prevented during the expected duration of life, and system interfaces cannot lead to failure.
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1036 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book POWER HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Download or read book Lateral Power Transistors in Integrated Circuits written by Tobias Erlbacher and published by Springer. This book was released on 2014-10-08 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Download or read book China Semiconductor Technology International Conference 2010 CSTIC 2010 written by Han-Ming Wu and published by The Electrochemical Society. This book was released on 2010-03 with total page 1203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our mission is to provide a forum for world experts to discuss technologies, address the growing needs associated with silicon technology, and exchange their discoveries and solutions for current issues of high interest. We encourage collaboration, open discussion, and critical reviews at this conference. Furthermore, we hope that this conference will also provide collaborative opportunities for those who are interested in the semiconductor industry in Asia, particularly in China.
Download or read book Micro Electronic and Mechanical Systems written by Kenichi Takahata and published by BoD – Books on Demand. This book was released on 2009-12-01 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses key aspects of MEMS technology areas, organized in twenty-seven chapters that present the latest research developments in micro electronic and mechanical systems. The book addresses a wide range of fundamental and practical issues related to MEMS, advanced metal-oxide-semiconductor (MOS) and complementary MOS (CMOS) devices, SoC technology, integrated circuit testing and verification, and other important topics in the field. ?Several chapters cover state-of-the-art microfabrication techniques and materials as enabling technologies for the microsystems. Reliability issues concerning both electronic and mechanical aspects of these devices and systems are also addressed in various chapters.
Download or read book EKC2010 written by Man-Wook Han and published by Springer Science & Business Media. This book was released on 2011-07-09 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current research fields in science and technology were presented and discussed at the EKC2009, informing about the interests and directions of the scientists and engineers in EU countries and Korea. The Conference has emerged from the idea of bringing together EU and Korea to get to know each other better, especially in fields of science and technology.
Download or read book Proceedings of the International Symposium on Power Semiconductor Devices and ICs written by and published by . This book was released on 2002 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Processes and Devices 2007 written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Download or read book Issues in General Physics Research 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 13957 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in General Physics Research / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about General Physics Research. The editors have built Issues in General Physics Research: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about General Physics Research in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in General Physics Research: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets written by Laurent Leyssenne and published by Springer Science & Business Media. This book was released on 2011-01-11 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency “backed-off” regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area /low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets, PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series...) that are traditionally related to PA design. Specific issues that one encounters in power amplifiers (such as thermal / memory effects, stability, VSWR sensitivity...) and the way of overcoming them are also extensively considered throughout this book.
Download or read book ISPSD 04 written by and published by . This book was released on 2004 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Switchmode RF and Microwave Power Amplifiers written by Andrei Grebennikov and published by Academic Press. This book was released on 2021-03-19 with total page 842 pages. Available in PDF, EPUB and Kindle. Book excerpt: Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. - Provides a complete history of high-efficiency Class E and Class F techniques - Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths - Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs - Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques - Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations
