Download or read book High temperature Ferromagnetism in Transition Metal Implanted Wide bandgap Semiconductors written by Jeremy A. Raley and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Download or read book State of the Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors Photonics and Electronics IV written by R. F. Kopf and published by The Electrochemical Society. This book was released on 2003 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Swift Heavy Ions for Materials Engineering and Nanostructuring written by Devesh Kumar Avasthi and published by Springer Science & Business Media. This book was released on 2011-05-24 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beams have been used for decades for characterizing and analyzing materials. Now energetic ion beams are providing ways to modify the materials in unprecedented ways. This book highlights the emergence of high-energy swift heavy ions as a tool for tailoring the properties of materials with nanoscale structures. Swift heavy ions interact with materials by exciting/ionizing electrons without directly moving the atoms. This opens a new horizon towards the 'so-called' soft engineering. The book discusses the ion beam technology emerging from the non-equilibrium conditions and emphasizes the power of controlled irradiation to tailor the properties of various types of materials for specific needs.
Download or read book Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors written by Brian P. Feller and published by . This book was released on 2005 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Download or read book Investigaton of the Suitability of Wide Bandgap Dilute Magnetic Semiconductors for Spintronics written by Matthew Hartmann Kane and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: New semiconductor materials may enable next-generation 'spintronic' devices which exploit both the spin and charge of an electron for data processing, storage, and transfer. The realization of such devices would benefit greatly from room temperature ferromagnetic dilute magnetic semiconductors. Theoretical predictions have suggested that room temperature ferromagnetism may be possible in the wide bandgap semiconductors GaMnN and ZnMnO, though the existing models require input from the growth of high-quality materials. This work focuses on an experimental effort to develop high-quality materials in both of these wide bandgap materials systems. ZnMnO and ZnCoO single crystals have been grown by a modified melt growth technique. X-ray diffraction was used to examine the structural quality and demonstrate the single crystal character of these devices. Substitutional transition metal incorporation has been verified by optical transmission and electron paramagnetic resonance measurements. No indications of ferromagnetic hysteresis are observed from the bulk single crystal samples, and temperature dependent magnetization studies demonstrate a dominant antiferromagnetic exchange interaction. Efforts to introduce ferromagnetic ordering were only successful through processing techniques which significantly degraded the material quality. GaMnN thin films were grown by metalorganic chemical vapor deposition. Good crystalline quality and a consistent growth mode with Mn incorporation were verified by several independent characterization techniques. Substitutional incorporation of Mn on the Ga lattice site was confirmed by electron paramagnetic resonance. Mn acted as a deep acceptor in GaN. Nevertheless, ferromagnetic hysteresis was observed in the GaMnN films. The apparent strength of the magnetization correlated with the relative ratio of trivalent to divalent Mn. Valence state control through codoping with additional donors such as silicon was observed. Additional studies on GaFeN also showed a magnetic hysteresis. A comparison with implanted samples showed that the common origin to the apparent strong ferromagnetic hysteresis related to contribution from Mn substitutional ions. The observed magnetic hysteresis is due to the formation of Mn-rich regions during the growth process. This work demonstrated that the original intrinsic models for room temperature ferromagnetism in the wide bandgap semiconductors do not hold and the room temperature ferromagnetism in these materials results from extrinsic contributions.
Download or read book Growth of Novel Wide Bandgap Room Temperature Ferromagnetic Semiconductor for Spintronic Applications written by Shalini Gupta and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents the development of a GaN-based dilute magnetic semiconductor (DMS) by metal organic chemical vapor deposition (MOCVD) that is ferromagnetic at room temperature (RT), electrically conductive, and possesses magnetic properties that can be tuned by n- and p-doping. The transition metal series (TM: Cr, Mn, and Fe) along with the rare earth (RE) element, Gd, was investigated in this work as the magnetic ion source for the DMS. Single- phase and strain-free GaTMN films were obtained. Optical measurements revealed that Mn is a deep acceptor in GaN, while Hall measurements showed that these GaTMN films were semi-insulating, making carrier mediated exchange unlikely. Hysteresis curves were obtained for all the GaTMN films, and by analyzing the effect of n- and p-dopants on the magnetic properties of these films it was determined that the magnetization is due to magnetic clusters. These findings are supported by the investigation of the effect of TM dopants in GaN nanostructures which reveal that TMs enhance nucleation resulting in superparamagnetic nanostructures. Additionally, this work presents the first report on the development of GaGdN by MOCVD providing an alternate route to developing a RT DMS. Room temperature magnetization results revealed that the magnetization strength increases with Gd concentration and can be enhanced by n- and p-doping, with holes being more efficient at stabilizing the ferromagnetic signal. The GaGdN films obtained in this work are single-phase, unstrained, and conductive making them suitable for the development of multifunctional devices that integrate electrical, optical, and magnetic properties.
Download or read book Spintronic Materials and Technology written by Yongbing Xu and published by CRC Press. This book was released on 2006-10-25 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Few books exist that cover the hot field of second-generation spintronic devices, despite their potential to revolutionize the IT industry.Compiling the obstacles and progress of spin-controlled devices into one source, Spintronic Materials and Technology presents an in-depth examination of the most recent technological spintronic developmen
Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003-07-14 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge.
Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.
Download or read book Functional Materials written by S. Banerjee and published by Elsevier. This book was released on 2011-12-09 with total page 731 pages. Available in PDF, EPUB and Kindle. Book excerpt: Functional materials have assumed a very prominent position in several high-tech areas. Such materials are not being classified on the basis of their origin, nature of bonding or processing techniques but are classified on the basis of the functions they can perform. This is a significant departure from the earlier schemes in which materials were described as metals, alloys, ceramics, polymers, glass materials etc. Several new processing techniques have also evolved in the recent past. Because of the diversity of materials and their functions it has become extremely difficult to obtain information from single source. Functional Materials: Preparation, Processing and Applications provides a comprehensive review of the latest developments. - Serves as a ready reference for Chemistry, Physics and Materials Science researchers by covering a wide range of functional materials in one book - Aids in the design of new materials by emphasizing structure or microstructure – property correlation - Covers the processing of functional materials in detail, which helps in conceptualizing the applications of them
Download or read book Handbook of Spintronic Semiconductors written by Weimin Chen and published by CRC Press. This book was released on 2019-05-08 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.
Download or read book Optoelectronic Devices III Nitrides written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-17 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. - Broad review of optoelectronic applications of III-V nitrides
Download or read book State of the Art Program on Compound Semiconductors SOTAPOCS XLII and Processes at the Compound Semiconductor Solution Interface written by P. C. Chang and published by The Electrochemical Society. This book was released on 2005 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Journal of the Korean Physical Society written by and published by . This book was released on 2007 with total page 946 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Topics in Condensed Matter Research written by John V. Chang and published by Nova Publishers. This book was released on 2007 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Condensed matter is one of the most active fields of physics, with a stream of discoveries in areas from superfluidity and magnetism to the optical, electronic and mechanical properties of materials such as semiconductors, polymers and carbon nanotubes. It includes the study of well-characterised solid surfaces, interfaces and nanostructures as well as studies of molecular liquids (molten salts, ionic solutions, liquid metals and semiconductors) and soft matter systems (colloidal suspensions, polymers, surfactants, foams, liquid crystals, membranes, biomolecules etc) including glasses and biological aspects of soft matter. This book presents state-of-the-art research in this exciting field.
