Download or read book High Performance Undoped Indium Phosphide indium Gallium Arsenide Heterojunction Insulated gate Field effect Transistors HIGFET written by Eric Anthony Martin and published by . This book was released on 1989 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heterojunction and Dielectrically Insulated Gate InP Field Effect Transistors written by Cynthia Marie Hanson and published by . This book was released on 1988 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book DESIGN OF GALLIUM ARSENIDE AND INDIUM PHOSPHIDE BASED HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH SPEED PERFORMANCE GALLIUM ARSENIDE INDIUM PHOSPHIDE written by JUNTAO HU and published by . This book was released on 1991 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: latter devices are 2.17, 1.02 and 1.11 ps, respectively.

Download or read book DC and RF Characterization of Gallium Indium Arsenide aluminum Indium Arsenide indium Phosphide Modulation Doped Field Effect Transistors for Millimeter Wave Device Applications written by Lauren Fay Palmateer and published by . This book was released on 1989 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Performance Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by David Abbas Ahmari and published by . This book was released on 1999 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Submicrometer gate Indium Phosphide based Field effect Transistors for High frequency Applications written by Jente Benedict Kuang and published by . This book was released on 1990 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High frequency Indium Phosphide indium Gallium Arsenide Heterojunction Bipolar Transistors written by Michael Thomas Fresina and published by . This book was released on 1993 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book InGaAs Field effect Transistors written by Klaus Heime and published by Wiley-Blackwell. This book was released on 1989 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of High performance Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by Michael Thomas Fresina and published by . This book was released on 1996 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: The heterojunction bipolar transistor (HBT) is a device whose time has come. The high gains, linearity, power efficiencies, current handling capabilities, and speeds available with HBT technology make this device attractive for a wide variety of applications from wireless communications to high-speed analog-to-digital converters. Companies across the United States are investing millions of dollars in developing HBT products and manufacturing capabilities. A manufacturable fabrication process for state-of-the-art InGaP/GaAs HBTs has been established. The process features nonalloyed emitter metal, self-aligned emitter and collector etches, self-aligned base metal, mesa isolation, polyimide planarization, and an air bridge metallization. A citric acid-based, selective GaAs etch has been developed for use in the self-aligned emitter etch/base metallization process. The etch has demonstrated excellent control and the uniformity necessary for high-yield wafer processing. The citric acid etch has also been used to implement the selective collector etch which minimizes the base-collector parasitic capacitance. An evaporated gold air bridge process has been developed and replaces a plated gold process, thereby improving yield and quality. State-of-the-art InGaP/GaAs HBTs have been developed. A baseline device structure and the standard fabrication process have consistently produced devices with a common-emitter current gain $beta>50,$ a common-emitter breakdown voltage $BVsb{rm CEO}>10$ V, a current gain cutoff frequency $fsb{rm T}>50$ GHz, and a maximum frequency of oscillation $fsb{rm max}>100$ GHz. Advanced device structures have been investigated for improving device performance and $fsb{rm T}$'s as high as 93 GHz, and $fsb{rm max}$'s as high as 197 GHz have been achieved. For power applications, InGaP/GaAs double heterojunction bipolar transistors (DHBTs) were analyzed and a composite collector structure has been optimized to improve DHBT operating characteristics. Finally, a submicron, self-aligned emitter ledge structure has been demonstrated, which is formed using wet chemical selective etches and does not require additional masking layers as do present ledge fabrication technologies. Presently, the leading HBT material technology is AlGaAs/GaAs. However, the InGaP/GaAs material system offers significant advantages in device performance and manufacturability. The band alignment of InGaP/GaAs improves device performance and the absence of aluminum in the emitter improves noise characteristics and long-term reliability. In addition, the availability of highly selective etch chemistries makes it easier to manufacture InGaP/GaAs HBTs. This work demonstrates the manufacturability and performance potential of InGaP/GaAs HBTs.

Download or read book High frequency Indium Gallium Phosphide gallium Arsenide Heterojunction Bipolar Transistors written by David Abbas Ahmari and published by . This book was released on 1996 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1989 with total page 932 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Speed Indium Gallium Phosphide indium Gallium Arsenide indium Phosphide Doped Channel HFETs and Implanted Gallium Arsenide Enchancement depletion Mode MESFETs Technology With an F T Over 130 GHz written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Experimental Validation of Submicron Scaling of Ultra High Speed Indium Phosphide Indium Gallium Arsenide Single Heterojunction Bipolar Transistors written by Walid Mahmoud Hafez and published by . This book was released on 2003 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ohmic Contact to Ion Implanted Gallium Arsenide Antimonide for Application to Indium Aluminum Arsenide Gallium Arsenide Antimonide Heterostructure Insulated Gate Field Effect Transistors written by and published by . This book was released on 1995 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: The p-channel In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) heterostructure insulated-gate field effect transistor (p-HIGFET) is a candidate for complementary integrated circuits due to superior cutoff characteristics and low gate leakage current. Advancement of the In(0.52)Al(0.48)As/GaAs(1-x)Sb(x) p-HIGFET requires improved source/drain design. Five main tasks were accomplished to achieve this goal. First, thermal limits of the In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFET were investigated. Second, the temperature dependence of band gap and impurity energies were determined for beryllium doped GaAs(0.51)Sb(0.49). Third, high acceptor concentrations were obtained on GaAs(1-x)Sb(x) using beryllium ion implantation. Fourth, Au/Zn/Au and Ti/Pt/Au were compared as ohmic contact metallizations to these highly doped layers. Finally, In(0.52)Al(0.48)As/GaAs(0.51)Sb(0.49) HIGFETs were fabricated and characterized using Ti/Pt/Au metallization and Be implantation. An array of characterization methods were employed to thoroughly characterize materials and devices including: transmission line measurements (TLM), electrochemical profiling, photoluminescence (PL), atomic force microscopy (AFM), secondary ion mass spectroscopy (SIMS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), cross-sectional transmission electron microscopy (XTEM), selected area diffraction (SAD) and energy dispersive X-ray analysis (EDX). jg p.25.

Download or read book Submicron Scaling of Indium Phosphide indium Gallium Arsenide Heterojunction Bipolar Transistors Toward Terahertz Bandwidths written by Walid Mahmoud Hafez and published by . This book was released on 2005 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Compound Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.